JPH0474433B2 - - Google Patents

Info

Publication number
JPH0474433B2
JPH0474433B2 JP60228083A JP22808385A JPH0474433B2 JP H0474433 B2 JPH0474433 B2 JP H0474433B2 JP 60228083 A JP60228083 A JP 60228083A JP 22808385 A JP22808385 A JP 22808385A JP H0474433 B2 JPH0474433 B2 JP H0474433B2
Authority
JP
Japan
Prior art keywords
gas
substrate
product gas
nitride film
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60228083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6289876A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60228083A priority Critical patent/JPS6289876A/ja
Priority to CN86106620A priority patent/CN1027549C/zh
Priority to KR1019860008597A priority patent/KR920000591B1/ko
Publication of JPS6289876A publication Critical patent/JPS6289876A/ja
Publication of JPH0474433B2 publication Critical patent/JPH0474433B2/ja
Priority to US08/219,287 priority patent/US5512102A/en
Priority to CN94106741A priority patent/CN1053230C/zh
Priority to CN94106740A priority patent/CN1053229C/zh
Priority to US08/814,993 priority patent/US6230650B1/en
Priority to US08/853,589 priority patent/US6673722B1/en
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP60228083A 1985-10-14 1985-10-14 薄膜形成方法 Granted JPS6289876A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP60228083A JPS6289876A (ja) 1985-10-14 1985-10-14 薄膜形成方法
CN86106620A CN1027549C (zh) 1985-10-14 1986-10-14 利用磁场的微波增强型cvd系统和方法
KR1019860008597A KR920000591B1 (ko) 1985-10-14 1986-10-14 마이크로파 강화 cvd시스템
US08/219,287 US5512102A (en) 1985-10-14 1994-03-28 Microwave enhanced CVD system under magnetic field
CN94106741A CN1053230C (zh) 1985-10-14 1994-06-21 利用磁场的微波增强型cvd系统和方法
CN94106740A CN1053229C (zh) 1985-10-14 1994-06-21 利用磁场的微波增强型cvd系统和方法
US08/814,993 US6230650B1 (en) 1985-10-14 1997-03-14 Microwave enhanced CVD system under magnetic field
US08/853,589 US6673722B1 (en) 1985-10-14 1997-05-09 Microwave enhanced CVD system under magnetic field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60228083A JPS6289876A (ja) 1985-10-14 1985-10-14 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6289876A JPS6289876A (ja) 1987-04-24
JPH0474433B2 true JPH0474433B2 (enrdf_load_stackoverflow) 1992-11-26

Family

ID=16870923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60228083A Granted JPS6289876A (ja) 1985-10-14 1985-10-14 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6289876A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JPS6473079A (en) * 1987-09-11 1989-03-17 Sony Corp Cvd device
JP2574095B2 (ja) * 1992-02-27 1997-01-22 株式会社ジーティシー 酸化ケイ素薄膜の形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945907A (ja) * 1982-09-06 1984-03-15 Nippon Telegr & Teleph Corp <Ntt> 金属酸化物膜の形成装置および形成方法

Also Published As

Publication number Publication date
JPS6289876A (ja) 1987-04-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term