WO2001027988A1 - Procede de traitement - Google Patents

Procede de traitement Download PDF

Info

Publication number
WO2001027988A1
WO2001027988A1 PCT/JP2000/007082 JP0007082W WO0127988A1 WO 2001027988 A1 WO2001027988 A1 WO 2001027988A1 JP 0007082 W JP0007082 W JP 0007082W WO 0127988 A1 WO0127988 A1 WO 0127988A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
processing method
film
flow rate
heating
Prior art date
Application number
PCT/JP2000/007082
Other languages
English (en)
Japanese (ja)
Inventor
Yasuo Kobayashi
Masao Yoshioka
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2001027988A1 publication Critical patent/WO2001027988A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

Definitions

  • the present invention relates to a processing method for removing an oxide film formed on a surface of an object to be processed.
  • a mixed gas of N 2 gas and H 2 gas is activated by plasma to form an active gas species, and NF 3 gas is added to the down flow of the active gas species to activate the NF 3 gas.
  • the active gas species of the NF 3 gas reacts with the oxide film on the surface of the wafer to form a generated film, and then the wafer is heated to a predetermined temperature to vaporize and remove the generated film.
  • Such a processing method is capable of processing fine holes and narrow portions, and has a good condition after processing.
  • the resistance the resistance of the contact portion between the hole bottom and the conductive material buried in the hole.
  • the present invention has been made in order to solve the above problems, and has as its object to provide a processing method capable of reducing contact resistance and thus improving yield. Disclosure of the invention
  • the object to be treated contains ammonia and hydrogen peroxide.
  • the mixed gas of N 2 gas and H 2 gas is activated by plasma to form an active gas species, and NF 3 gas is added to the down flow of the active gas species to add NF 3 gas.
  • Activated exposing the active gas species of NF 3 gas to the surface of the object to be processed, reacting it with the oxide film to form a formed film, and heating the object to a predetermined temperature to generate it. It is characterized in that the film is vaporized and the object to be processed is washed.
  • the invention described in claim 2 is characterized in that the supply flow rate of the N 2 gas is not less than 300 SCCM and not more than 500 SCCM.
  • the invention described in claim 3 is characterized in that the supply flow rate of the H 2 gas is not less than 200 SCC M and not more than 400 SCC M.
  • the invention described in claim 4 is characterized in that the supply flow rate of the NF 3 gas is 20 SCCM or more and 80 SCCM or less.
  • the invention described in claim 5 is characterized in that the process pressure in the step of forming the formed film is not less than 399 Pa and not more than 665 Pa.
  • the invention described in claim 6 is characterized in that the power for generating plasma is not less than 250 W and not more than 350 W.
  • the invention described in claim 7 is characterized in that the heating temperature when heating the formed product film is 100 ° C. or higher.
  • FIG. 1 is a configuration diagram showing an example of a processing apparatus used in the processing method of the present invention.
  • FIG. 2 is a diagram illustrating the effect of the present invention.
  • FIG. 3 is a diagram illustrating the effect of the present invention.
  • FIG. 4 is a diagram showing the relationship between the N 2 flow rate, the etching rate, and the uniformity.
  • FIG. 5 is a diagram showing the relationship between the H 2 flow rate, the etching rate, and the uniformity.
  • FIG. 6 is a diagram showing the relationship between the flow rate of NF 3 and the etching rate and uniformity.
  • FIG. 7 is a diagram showing the relationship between the process pressure and the etching rate and uniformity.
  • C FIG. 8 is a diagram showing the relationship between the microwave output and the etching rate and uniformity.
  • FIG. 9 is a diagram showing the relationship between the heating temperature after the process and the etching rate.
  • FIG. 1 is a configuration diagram showing an example of a processing apparatus used in a natural oxide film removing step in the processing method according to the present invention.
  • a processing apparatus 12 is provided with an oxide film, particularly a natural gas, for a plasma forming tube 14 for activating a mixed gas of N 2 gas and H 2 gas by plasma and a semiconductor wafer W to be processed.
  • a treatment container 16 for performing a predetermined surface treatment for removing an oxide film (an oxide film formed unintentionally by contact with oxygen in the atmosphere or a cleaning solution).
  • a mounting table 20 on which a wafer to be processed is mounted is provided inside the processing container 16, and an exhaust port 22 is provided at a peripheral edge at the bottom of the processing container 16.
  • the inside of the processing vessel 16 can be evacuated.
  • An irradiation port 26 is formed at the bottom of the processing container 16 below the mounting table 20, and the irradiation port 26 is provided with a transmission window 28.
  • a number of heating lamps 36 are provided for heating the mounting table 20 from the lower surface side, and the heating light emitted from the heating lamps 36 is transmitted therethrough. The light passes through the window 28 and enters the back surface of the wafer W.
  • the plasma forming tube 14 is open at the ceiling of the processing vessel 16 and is attached to the processing vessel 16 in an upright state.
  • An introduction nozzle 46 for introducing a plasma gas composed of N 2 gas and H 2 gas is provided at the upper end of the plasma forming tube 14, and a gas passage 48 is provided in the introduction nozzle 46. Consolidated.
  • An N 2 gas source 52 and an H 2 gas source 54 are connected to the gas passages 48 via flow controllers 50, respectively.
  • the underneath of the introduction nozzle 4 6, c the plasma forming section 5 6 plasma generation unit 5 6 is provided, 2. 4 5 GH z microwave source 5 8 for generating microwaves with A microwave generated by the microwave generation source 58 through the rectangular waveguide 62. 60. Then, plasma is generated in the plasma forming tube 14 by the supplied microwave, and H 2 gas and The N2 gas mixture is activated to form a downhole.
  • An outlet 64 at the lower end of the plasma forming tube 14 is provided with a cover member 66 extending downward in an umbrella shape. The cover member 66 covers an upper portion of the mounting table 20 so that gas can be efficiently removed from the wafer. It is made to flow down to W.
  • An NF 3 gas supply unit 68 for supplying NF 3 gas is provided immediately below the outlet 64.
  • the NF 3 gas supply section 68 has a shower head 70, and the shower head 70 is connected to a NF 3 gas source 8 through a communication pipe 74, a gas passage 76, and a flow controller 78. Connected to 0.
  • a wafer to be processed is cleaned with a cleaning liquid generally called SC-1 solution or APM solution containing ammonia and hydrogen peroxide.
  • the inside of the processing container 16 is sealed, and the inside is evacuated.
  • N 2 gas and H 2 gas are introduced from the N 2 gas source 52 and the H 2 gas source 54 at a predetermined flow rate into the plasma forming tube 14 from the introduction nozzle 46.
  • a microwave of 2.45 GHz is generated from the microwave generating source 58 of the microwave forming section 56 and guided to the Evenson-type waveguide 60, thereby forming the plasma forming tube.
  • the N 2 gas and the H 2 gas are turned into plasma and activated by the microwaves, and active gas species are formed.
  • the active gas species forms a downflow by evacuation in the processing container 16 and flows down the plasma forming tube 14 toward the outlet 64.
  • the NF 3 gas supplied from the NF 3 gas source 80 is supplied from the NF 3 gas source 80 to the N 2 gas from the ring-shaped shower head 70 of the NF 3 gas supply unit 68 disposed outside the plasma forming tube 14.
  • the added NF 3 gas is also activated by the down-flow active gas species.
  • the NF 3 gas is also converted into an active gas, and reacts with the natural oxide film on the surface of the wafer W in combination with the above-mentioned active gas species in the downflow to form a mixed film of Si, N, H, and F. I do. This process promotes the reaction at low temperatures, so it can be produced at room temperature. A film is formed.
  • gas supply flow rates of H2, NF3, and N2 are 300 S CCM, 60 SCCM, and 400 SCCM, respectively.
  • SCCM standard cubic centimeters per minute
  • the process pressure is 532 Pa
  • the plasma power is 350 W
  • the process time is 1 minute.
  • a formed film reacting with the natural oxide film is formed on the wafer surface.
  • the upper part of the mounting table 20 is covered with the umbrella-shaped covering member 66, the dispersion of the active gas species in the downflow is suppressed, and the active gas species flows down onto the wafer surface efficiently.
  • a formation film can be formed on the substrate.
  • the heating lamp 36 is turned on to heat the wafer W to a predetermined temperature, for example, 100 ° C. or higher. By this heating, the above-mentioned generated film is sublimated (vaporized). As a result, the natural oxide film on the wafer W is removed, and the Si surface appears on the wafer surface.
  • the process conditions at this time are a process pressure of 133 Pa and a process time of about 1 minute.
  • Fig. 2 shows the comparison of the contact resistance between the case where this treatment method is adopted and the case where the treatment with SC-1 solution (APM solution) is not performed in advance only in the natural oxide film removal step. It is.
  • graph 1 graph indicated by “1 ⁇ —”
  • graph 2 graph indicated by “1” —
  • the case where only the natural oxide film removing step is not performed beforehand with the SC-1 solution is shown.
  • the contact resistance value when the native oxide film is removed after cleaning with SC-1 solution is significantly reduced compared to the case where only the native oxide film is removed.
  • Figure 3 shows the comparison of the contact resistance between the case where the natural oxide film is removed after the treatment with SC-1 solution and the case where the cleaning with the DHF solution is performed after the cleaning with SC-11 solution. is there.
  • the graph 1 (the graph indicated by “1 ⁇ 1”) similarly shows the case where the natural oxide film is removed after the treatment with the SC-1 solution.
  • Graph 3 (graph indicated by “1x—”) shows the case where washing with DHF solution was performed after treatment with SC-1 solution.
  • the resistance value is lower than when cleaning with DHF solution is performed after cleaning with SC-1 solution. Decrease.
  • the value of the contact resistance can be significantly reduced as compared with the case where only the natural oxide film is removed, and the yield can be improved.
  • the etching rate and the uniformity of the etching are extremely important in the processing steps. Therefore, to improve the etching rate and uniformity, the optimum conditions of the process were investigated based on experiments. The result will be described below.
  • the etching rate is (amount of decrease in film thickness by the above-described processing method) / (time during which an active gas species reacts with an oxide film).
  • FIGS. 4 to 9 are graphs showing experimental results for the process conditions.
  • the graphs plotted with circles indicate the etching rate
  • the graphs plotted with squares indicate the uniformity.
  • Figure 4 shows a flow of H2 of 300 SCCM, a flow of NF3 of 60 SCCM, a microphone output of 350 W, a process pressure of 532 Pa, a process time of 1 min, and post-process heating (140 ° C).
  • the values of the etching rate (angstrom / min) and the uniformity (%) with respect to the flow rate of N2 are shown for 1 min.
  • the N2 flow rate is appropriately 300 SCCM or more from the viewpoint of the etching rate, and considering uniformity, 300 to 500 SCCM is preferable.
  • Figure 5 shows a flow rate of NF 3 of 60 SCCM, a flow rate of N 2 of 400 SCCM, a microphone output of 350 W, a process pressure of 532 Pa, a process time of 1 min, and post-process heating (140 (° C) lmin, the values of etching rate (angstrom / min) and uniformity (%) with respect to the flow rate of H2 are shown.
  • the appropriate H2 flow rate is 200-400 SCCM in terms of etching rate and 300-400 SCCM in terms of uniformity.
  • Figure 6 shows a flow rate of H2 of 300 SCCM, a flow rate of N2 of 400 SCCM, a microphone output of 350 W, a process pressure of 532 Pa, a process time of 1 min, and post-process heating (140 (° C) lmin shows the values of the etching rate (angstrom / min) and the uniformity (%) with respect to the NF3 flow rate.
  • the etching rate is not significantly affected by changing the NF3 flow rate. Therefore, from the viewpoint of uniformity, NF3 is practically 20 to 80 SCCM, and 20 to 60 SCCM is more preferable.
  • Figure 7 shows that the flow rate of H2 was 300 SCCM, the flow rate of NF 3 was 60 SCCM, the flow rate of N2 was 400 SCCM, the microwave output was 350 W, the process time was 2 min, and the post-process heating (140 ° C) was 1 min.
  • the values of the etching rate (Angstrom Zmin) and the uniformity (%) are shown with respect to the process pressure (Pa).
  • the process pressure (Pa) is suitably from 399 to 665 Pa, and more preferably 532 Pa, from the viewpoint of etching rate and uniformity.
  • Figure 8 shows a flow rate of H2 of 300 SCCM, a flow rate of NF3 of 60 SCCM, a flow rate of N2 of 400 SCCM, a process pressure of 532 Pa, a process time of 1 min, and post-process heating (140 ° C).
  • the values of the etching rate (angstrom / min) and the uniformity (%) with respect to the microwave output (W) are shown when 1 min is used.
  • a microwave output (W) of 250 W or more is appropriate from the viewpoint of the etching rate and uniformity.
  • charge-up damage occurs in one of several wafers, so that it is preferably 350 W or less.
  • FIG. 9 shows the value of the etching rate (angstrom / min) with respect to the heating temperature (° C) in the heating after the process of 1 min at 133 Pa.
  • the heating temperature should be 100 ° C or higher from the viewpoint of the etching rate.
  • maximum-min (%) means that the maximum value of the etching rate at a plurality of points on the wafer is max and the minimum value is min. Shows the uniformity expressed as (max—min) / (max + min) ⁇ 100 (%).
  • the H2 flow rate, NF3 flow rate, N2 flow rate, microphone mouth wave output, process pressure, and process time are set to predetermined values, and the etching rate and etching rate can be adjusted. Uniformity can be improved. Therefore, processing efficiency and uniformity can be improved.
  • a natural oxide film removing step that is, The mixed gas of N 2 gas and H 2 gas is activated by plasma to form an active gas species, and NF 3 gas is added to this active gas species to activate the NF 3 gas.
  • the active gas species is exposed to the surface of the object to be processed, and is reacted with a natural oxide film to form a generated film.
  • the processing efficiency and uniformity can be improved.
  • the uniformity of the treatment can be improved.
  • the processing efficiency can be improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

L'invention porte sur un procédé de traitement comportant les étapes suivantes: nettoyage d'un matériau organique et des particules adhérant à l'article à traiter à l'aide d'une solution SC-1; activation d'un mélange de N2 et de H2 gazeux par un plasma pour former un gaz activé; introduction de NF3 gazeux en aval du gaz activé pour activer le NF3 gazeux; exposition de la surface de l'article à traiter au NF3 activé résultant pour le faire réagir avec la couche résultant de l'oxydation naturelle de l'article afin de créer un film formé; et chauffage de l'article à une température prédéterminée pour vaporiser le film formé. Le procédé sert à réduire la résistance de contact définie dans la spécification, même dans un petit trou ou une partie étroite, tout en conservant un bon état après traitement.
PCT/JP2000/007082 1999-10-12 2000-10-12 Procede de traitement WO2001027988A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28969399A JP2001110785A (ja) 1999-10-12 1999-10-12 処理方法
JP11/289693 1999-10-12

Publications (1)

Publication Number Publication Date
WO2001027988A1 true WO2001027988A1 (fr) 2001-04-19

Family

ID=17746535

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/007082 WO2001027988A1 (fr) 1999-10-12 2000-10-12 Procede de traitement

Country Status (3)

Country Link
JP (1) JP2001110785A (fr)
TW (1) TW563166B (fr)
WO (1) WO2001027988A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8398813B2 (en) 1999-08-13 2013-03-19 Tokyo Electron Limited Processing apparatus and processing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100573929B1 (ko) * 2001-12-14 2006-04-26 (주)에이피엘 플라즈마를 이용한 표면 세정 장치 및 방법
JP5233734B2 (ja) * 2008-02-20 2013-07-10 東京エレクトロン株式会社 ガス供給装置、成膜装置及び成膜方法
US9216609B2 (en) * 2011-02-08 2015-12-22 Ulvac, Inc. Radical etching apparatus and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784337A2 (fr) * 1996-01-10 1997-07-16 Nec Corporation Méthode d'enlèvement d'une couche contaminée par le carbone d'une surface d'un substrat en silicum pour le dépÔt épitaxial sélectif de silicium et appareil pour le depÔt épitaxial sélectif de silicium
JPH1098026A (ja) * 1996-09-24 1998-04-14 Tokyo Electron Ltd アッシング方法
EP0887845A2 (fr) * 1997-06-04 1998-12-30 Tokyo Electron Limited Dispositif et procédé pour le retrait d'un film d'oxyde

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784337A2 (fr) * 1996-01-10 1997-07-16 Nec Corporation Méthode d'enlèvement d'une couche contaminée par le carbone d'une surface d'un substrat en silicum pour le dépÔt épitaxial sélectif de silicium et appareil pour le depÔt épitaxial sélectif de silicium
JPH1098026A (ja) * 1996-09-24 1998-04-14 Tokyo Electron Ltd アッシング方法
EP0887845A2 (fr) * 1997-06-04 1998-12-30 Tokyo Electron Limited Dispositif et procédé pour le retrait d'un film d'oxyde

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8398813B2 (en) 1999-08-13 2013-03-19 Tokyo Electron Limited Processing apparatus and processing method

Also Published As

Publication number Publication date
JP2001110785A (ja) 2001-04-20
TW563166B (en) 2003-11-21

Similar Documents

Publication Publication Date Title
TWI493622B (zh) 改善電漿輔助化學氣相沈積（ｐｅｃｖｄ）膜的程序控制及膜保形性之方法
US8187389B2 (en) Method of removing resist and apparatus therefor
JP3954833B2 (ja) バッチ式真空処理装置
JPH0752718B2 (ja) 薄膜形成方法
WO2004095559A1 (fr) Procede de retrait de film d'oxyde de silicium et appareil de traitement
JPH06338478A (ja) 半導体装置の製造装置及び半導体装置の製造方法
KR100566472B1 (ko) 표면 처리 방법 및 장치와, 처리 방법
JPH06151394A (ja) 半導体基板表面もしくは薄膜表面のドライ洗浄法
JP3709432B2 (ja) 排ガス処理装置及び基板処理装置
KR20060090305A (ko) 플라즈마 처리 방법
JP2005045220A (ja) 熱処理方法及び熱処理装置
KR20020070820A (ko) 반도체 웨이퍼의 식각용 장치 및 그 방법
JPH10326771A (ja) 水素プラズマダウンストリーム処理装置及び水素プラズマダウンストリーム処理方法
JPS62214175A (ja) 減圧ｃｖｄ処理装置のクリーニング法
WO2001027988A1 (fr) Procede de traitement
KR101321155B1 (ko) 실리콘 산화막용 성막 원료 및 그것을 이용한 실리콘 산화막의 성막 방법
JP2663583B2 (ja) シリコン基板上のヘテロエピタキシャル膜の製造方法
JP3125280B2 (ja) Ｃｖｄ装置のクリーニング方法
JP4196517B2 (ja) 半導体素子製造方法
JP4010307B2 (ja) 表面処理方法及びその装置
JPH0474433B2 (fr)
JPH04187771A (ja) クリーニング方法
JPH07335643A (ja) 成膜方法
JP2532353B2 (ja) 気相エッチング方法および装置
TW202330979A (zh) 具有靜電夾持的遠端電漿沉積

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 10110324

Country of ref document: US

122 Ep: pct application non-entry in european phase