JPH0473613B2 - - Google Patents

Info

Publication number
JPH0473613B2
JPH0473613B2 JP59094023A JP9402384A JPH0473613B2 JP H0473613 B2 JPH0473613 B2 JP H0473613B2 JP 59094023 A JP59094023 A JP 59094023A JP 9402384 A JP9402384 A JP 9402384A JP H0473613 B2 JPH0473613 B2 JP H0473613B2
Authority
JP
Japan
Prior art keywords
silicon
cleaning
oxide film
hydrogen peroxide
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59094023A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60239028A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59094023A priority Critical patent/JPS60239028A/ja
Publication of JPS60239028A publication Critical patent/JPS60239028A/ja
Publication of JPH0473613B2 publication Critical patent/JPH0473613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P70/15—

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP59094023A 1984-05-11 1984-05-11 表面清浄化方法 Granted JPS60239028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59094023A JPS60239028A (ja) 1984-05-11 1984-05-11 表面清浄化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59094023A JPS60239028A (ja) 1984-05-11 1984-05-11 表面清浄化方法

Publications (2)

Publication Number Publication Date
JPS60239028A JPS60239028A (ja) 1985-11-27
JPH0473613B2 true JPH0473613B2 (enExample) 1992-11-24

Family

ID=14098959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59094023A Granted JPS60239028A (ja) 1984-05-11 1984-05-11 表面清浄化方法

Country Status (1)

Country Link
JP (1) JPS60239028A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808259A (en) * 1988-01-25 1989-02-28 Intel Corporation Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe
JP2906416B2 (ja) * 1988-09-16 1999-06-21 ソニー株式会社 シリコンのエッチング方法
JP2859624B2 (ja) * 1989-02-07 1999-02-17 東京エレクトロン株式会社 枚葉式洗浄装置及び洗浄方法
JPH11121417A (ja) 1997-10-09 1999-04-30 Mitsubishi Electric Corp 半導体基板の処理システムおよび処理方法
US6372699B1 (en) * 1997-12-22 2002-04-16 Kurita Water Industries Ltd. Cleaning solution for electronic materials and method for using same
JP5095558B2 (ja) * 2008-08-29 2012-12-12 信越化学工業株式会社 ハイブリッド基板の洗浄方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434751A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Washing method for silicon wafer
JPS57180132A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Washing method of substrate
JPS57204132A (en) * 1981-06-10 1982-12-14 Fujitsu Ltd Washing method for silicon wafer

Also Published As

Publication number Publication date
JPS60239028A (ja) 1985-11-27

Similar Documents

Publication Publication Date Title
JP4486753B2 (ja) 単結晶シリコン基板上に単結晶ゲルマニウム層を得る方法およびそれにより得られた生成物
TW583351B (en) A method of producing a bonded wafer and the bonded wafer
TW465101B (en) Semiconductor substrate and method for producing the same
US5250149A (en) Method of growing thin film
US20020037654A1 (en) Surface treatment solution for polysilicon film and method of treating the surface of polysilicon film using the same
JPH0794725A (ja) 半導体装置のゲート酸化膜形成法
JP2004508709A (ja) 酸化物の選択的エッチング方法
TW200406893A (en) Substrate and manufacturing method therefor
JPS61270830A (ja) 表面清浄化方法
JPH0817163B2 (ja) エピタキシャルウェーハの製造方法
JP3276500B2 (ja) シリコンウェーハとその製造方法
CN116685723A (zh) 外延晶圆的制造方法
JPH0473613B2 (enExample)
US20100255659A1 (en) Reduction of watermarks in hf treatments of semiconducting substrates
RU2072585C1 (ru) Способ подготовки полупроводниковых подложек
Rai‐Choudhury Substrate Surface Preparation and Its Effect on Epitaxial Silicon
JP2595935B2 (ja) 表面清浄化方法
KR20010051122A (ko) 반도체 장치의 제조 방법
Nagasima et al. Local Crystallization of Thermal Oxide Film of Silicon
JPH1116844A (ja) エピタキシャルシリコンウェーハの製造方法と素材用ウェーハ
JPH0813165A (ja) シリコンのエッチング方法
JP2637950B2 (ja) 表面清浄化方法
JP2002270801A (ja) 半導体基板の製造方法及び半導体基板
JPH05182925A (ja) 半導体装置の製造方法及び半導体装置の製造装置
JP2970236B2 (ja) ＧａＡｓウェハ及びその製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees