JPS60239028A - 表面清浄化方法 - Google Patents
表面清浄化方法Info
- Publication number
- JPS60239028A JPS60239028A JP9402384A JP9402384A JPS60239028A JP S60239028 A JPS60239028 A JP S60239028A JP 9402384 A JP9402384 A JP 9402384A JP 9402384 A JP9402384 A JP 9402384A JP S60239028 A JPS60239028 A JP S60239028A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen peroxide
- silicon
- solution
- substrate
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004140 cleaning Methods 0.000 title claims description 31
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 15
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 12
- 239000012535 impurity Substances 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 7
- 238000009835 boiling Methods 0.000 abstract description 7
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 47
- 239000010408 film Substances 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 chirgon Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9402384A JPS60239028A (ja) | 1984-05-11 | 1984-05-11 | 表面清浄化方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9402384A JPS60239028A (ja) | 1984-05-11 | 1984-05-11 | 表面清浄化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60239028A true JPS60239028A (ja) | 1985-11-27 |
| JPH0473613B2 JPH0473613B2 (enExample) | 1992-11-24 |
Family
ID=14098959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9402384A Granted JPS60239028A (ja) | 1984-05-11 | 1984-05-11 | 表面清浄化方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60239028A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023920A (ja) * | 1988-01-25 | 1990-01-09 | Intel Corp | エッチング方法 |
| JPH0281429A (ja) * | 1988-09-16 | 1990-03-22 | Sony Corp | シリコンのエッチング方法 |
| JPH02207526A (ja) * | 1989-02-07 | 1990-08-17 | Tokyo Electron Ltd | 枚葉式洗浄装置及び洗浄方法 |
| EP0924970A3 (en) * | 1997-12-22 | 2000-03-08 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using the same |
| US6431183B1 (en) | 1997-10-09 | 2002-08-13 | Mitsubishi Denki Kabushiki Kaisha | Method for treating semiconductor substrates |
| JP2010056416A (ja) * | 2008-08-29 | 2010-03-11 | Shin-Etsu Chemical Co Ltd | ハイブリッド基板の洗浄方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434751A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Washing method for silicon wafer |
| JPS57180132A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Washing method of substrate |
| JPS57204132A (en) * | 1981-06-10 | 1982-12-14 | Fujitsu Ltd | Washing method for silicon wafer |
-
1984
- 1984-05-11 JP JP9402384A patent/JPS60239028A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5434751A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Washing method for silicon wafer |
| JPS57180132A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Washing method of substrate |
| JPS57204132A (en) * | 1981-06-10 | 1982-12-14 | Fujitsu Ltd | Washing method for silicon wafer |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023920A (ja) * | 1988-01-25 | 1990-01-09 | Intel Corp | エッチング方法 |
| JPH0281429A (ja) * | 1988-09-16 | 1990-03-22 | Sony Corp | シリコンのエッチング方法 |
| JPH02207526A (ja) * | 1989-02-07 | 1990-08-17 | Tokyo Electron Ltd | 枚葉式洗浄装置及び洗浄方法 |
| US6431183B1 (en) | 1997-10-09 | 2002-08-13 | Mitsubishi Denki Kabushiki Kaisha | Method for treating semiconductor substrates |
| EP0924970A3 (en) * | 1997-12-22 | 2000-03-08 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using the same |
| US6372699B1 (en) | 1997-12-22 | 2002-04-16 | Kurita Water Industries Ltd. | Cleaning solution for electronic materials and method for using same |
| KR100319119B1 (ko) * | 1997-12-22 | 2002-06-20 | 타케토시 카즈오 | 전자재료용세정수 |
| JP2010056416A (ja) * | 2008-08-29 | 2010-03-11 | Shin-Etsu Chemical Co Ltd | ハイブリッド基板の洗浄方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0473613B2 (enExample) | 1992-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |