JPH0471575B2 - - Google Patents

Info

Publication number
JPH0471575B2
JPH0471575B2 JP60064298A JP6429885A JPH0471575B2 JP H0471575 B2 JPH0471575 B2 JP H0471575B2 JP 60064298 A JP60064298 A JP 60064298A JP 6429885 A JP6429885 A JP 6429885A JP H0471575 B2 JPH0471575 B2 JP H0471575B2
Authority
JP
Japan
Prior art keywords
discharge
lte
plasma
substrate
surface treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60064298A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61222534A (ja
Inventor
Atsushi Sekiguchi
Hideo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP60064298A priority Critical patent/JPS61222534A/ja
Priority to US06/845,718 priority patent/US4664747A/en
Publication of JPS61222534A publication Critical patent/JPS61222534A/ja
Publication of JPH0471575B2 publication Critical patent/JPH0471575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
JP60064298A 1985-03-28 1985-03-28 表面処理方法および装置 Granted JPS61222534A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60064298A JPS61222534A (ja) 1985-03-28 1985-03-28 表面処理方法および装置
US06/845,718 US4664747A (en) 1985-03-28 1986-03-28 Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60064298A JPS61222534A (ja) 1985-03-28 1985-03-28 表面処理方法および装置

Publications (2)

Publication Number Publication Date
JPS61222534A JPS61222534A (ja) 1986-10-03
JPH0471575B2 true JPH0471575B2 (enExample) 1992-11-16

Family

ID=13254199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60064298A Granted JPS61222534A (ja) 1985-03-28 1985-03-28 表面処理方法および装置

Country Status (2)

Country Link
US (1) US4664747A (enExample)
JP (1) JPS61222534A (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
JPS62227089A (ja) * 1986-03-27 1987-10-06 Anelva Corp 表面処理方法および装置
JP2631650B2 (ja) * 1986-12-05 1997-07-16 アネルバ株式会社 真空装置
US4863561A (en) * 1986-12-09 1989-09-05 Texas Instruments Incorporated Method and apparatus for cleaning integrated circuit wafers
JPH0635663B2 (ja) * 1986-12-27 1994-05-11 日電アネルバ株式会社 表面処理方法および装置
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US4910436A (en) * 1988-02-12 1990-03-20 Applied Electron Corporation Wide area VUV lamp with grids and purging jets
JP2512783B2 (ja) * 1988-04-20 1996-07-03 株式会社日立製作所 プラズマエッチング方法及び装置
JP2530356B2 (ja) * 1988-05-20 1996-09-04 日本電子株式会社 誘導プラズマ発生装置
US5376628A (en) * 1988-06-30 1994-12-27 Anelva Corporation Method of improving or producing oxide superconductor
US4875989A (en) * 1988-12-05 1989-10-24 Texas Instruments Incorporated Wafer processing apparatus
US4918031A (en) * 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
US5084126A (en) * 1988-12-29 1992-01-28 Texas Instruments Incorporated Method and apparatus for uniform flow distribution in plasma reactors
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
DE69033452T2 (de) * 1989-09-08 2000-06-29 Tokyo Electron Ltd., Tokio/Tokyo Vorrichtung und Verfahren zum Behandeln von Substraten
US4987102A (en) * 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
EP0510340B1 (de) * 1991-04-23 1995-05-10 Balzers Aktiengesellschaft Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer
DE4202734A1 (de) * 1992-01-31 1993-08-05 Leybold Ag Strahlungsquelle, insbesondere fuer strahlungs-induzierte aetz- und cvd-anlagen
JP3253734B2 (ja) * 1992-06-19 2002-02-04 富士通株式会社 半導体装置製造用の石英製装置
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
FR2715168B1 (fr) * 1994-01-14 1996-03-08 Univ Lille Sciences Tech Procédé pour déposer, à la température ambiante, une couche de métal ou de semi-métal et leur oxyde sur un substrat.
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
BE1008338A5 (nl) * 1994-04-26 1996-04-02 Cobrain Nv Multifrequente inductieve werkwijze en inrichting voor het bewerken van materiaal.
US5725740A (en) * 1995-06-07 1998-03-10 Applied Materials, Inc. Adhesion layer for tungsten deposition
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JPH11238728A (ja) 1997-12-16 1999-08-31 Fujitsu Ltd 半導体デバイスの製造の際に使用される熱処理治具及びその製造法
US6112696A (en) * 1998-02-17 2000-09-05 Dry Plasma Systems, Inc. Downstream plasma using oxygen gas mixture
JP3735462B2 (ja) * 1998-03-30 2006-01-18 株式会社シンクロン 金属酸化物光学薄膜の形成方法および成膜装置
US6143084A (en) * 1998-03-19 2000-11-07 Applied Materials, Inc. Apparatus and method for generating plasma
JP3735461B2 (ja) * 1998-03-27 2006-01-18 株式会社シンクロン 複合金属の化合物薄膜形成方法及びその薄膜形成装置
JP3738154B2 (ja) * 1999-06-30 2006-01-25 株式会社シンクロン 複合金属化合物の薄膜形成方法及びその薄膜形成装置
JP4730572B2 (ja) * 2000-08-21 2011-07-20 株式会社アルバック プラズマ成膜装置及びそのクリーニング方法
NL1020634C2 (nl) * 2002-05-21 2003-11-24 Otb Group Bv Werkwijze voor het passiveren van een halfgeleider substraat.
DE102006042327B4 (de) * 2006-09-01 2009-10-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Ausbildung dünner Siliciumnitridschichten auf Oberflächen von kristallinen Silicium-Solarwafern
DE102006043943A1 (de) * 2006-09-14 2008-03-27 Leybold Optics Gmbh Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
KR20160053247A (ko) * 2014-10-31 2016-05-13 삼성전자주식회사 원자층 증착 장치
WO2017095561A1 (en) * 2015-12-04 2017-06-08 Applied Materials, Inc. Advanced coating method and materials to prevent hdp-cvd chamber arcing
EP3588538B1 (en) * 2017-02-14 2024-03-27 Toshiba Mitsubishi-Electric Industrial Systems Corporation Method of forming nitride films

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268711A (en) * 1979-04-26 1981-05-19 Optical Coating Laboratory, Inc. Method and apparatus for forming films from vapors using a contained plasma source
FR2463975A1 (fr) * 1979-08-22 1981-02-27 Onera (Off Nat Aerospatiale) Procede et appareil pour la gravure chimique par voie seche des circuits integres
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
US4569719A (en) * 1981-07-17 1986-02-11 Plasma Physics Corporation Glow discharge method and apparatus and photoreceptor devices made therewith
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
EP0106497B1 (en) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus
US4532971A (en) * 1983-05-06 1985-08-06 Atlas Pacific Engineering Company High speed vacuum syruper
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPS6130036A (ja) * 1984-07-23 1986-02-12 Fujitsu Ltd マイクロ波プラズマ処理装置
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system
US4600464A (en) * 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential

Also Published As

Publication number Publication date
US4664747A (en) 1987-05-12
JPS61222534A (ja) 1986-10-03

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Legal Events

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EXPY Cancellation because of completion of term