JPH0467792B2 - - Google Patents

Info

Publication number
JPH0467792B2
JPH0467792B2 JP60100502A JP10050285A JPH0467792B2 JP H0467792 B2 JPH0467792 B2 JP H0467792B2 JP 60100502 A JP60100502 A JP 60100502A JP 10050285 A JP10050285 A JP 10050285A JP H0467792 B2 JPH0467792 B2 JP H0467792B2
Authority
JP
Japan
Prior art keywords
semiconductor
thin film
present
conversion element
sapphire substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60100502A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61259583A (ja
Inventor
Ichiro Shibazaki
Takashi Kajino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP60100502A priority Critical patent/JPS61259583A/ja
Publication of JPS61259583A publication Critical patent/JPS61259583A/ja
Publication of JPH0467792B2 publication Critical patent/JPH0467792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
JP60100502A 1985-05-14 1985-05-14 半導体磁電変換素子 Granted JPS61259583A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60100502A JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60100502A JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Publications (2)

Publication Number Publication Date
JPS61259583A JPS61259583A (ja) 1986-11-17
JPH0467792B2 true JPH0467792B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-29

Family

ID=14275711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60100502A Granted JPS61259583A (ja) 1985-05-14 1985-05-14 半導体磁電変換素子

Country Status (1)

Country Link
JP (1) JPS61259583A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0548375B1 (en) * 1991-07-16 2001-11-28 Asahi Kasei Kabushiki Kaisha Semiconductor sensor and its manufacturing method
JP2014011343A (ja) * 2012-06-29 2014-01-20 Asahi Kasei Electronics Co Ltd ホール素子およびホール素子を用いた半導体装置
US10128434B2 (en) * 2016-12-09 2018-11-13 Rohm Co., Ltd. Hall element module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135632A (ja) * 1982-02-08 1983-08-12 Asahi Chem Ind Co Ltd インジウム−アンチモン−ヒ素系化合物薄膜の製造方法
JPS58153384A (ja) * 1982-03-05 1983-09-12 Asahi Chem Ind Co Ltd 磁電変換素子及び磁電変換素子の製造方法

Also Published As

Publication number Publication date
JPS61259583A (ja) 1986-11-17

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees