JPH0466379B2 - - Google Patents

Info

Publication number
JPH0466379B2
JPH0466379B2 JP11189886A JP11189886A JPH0466379B2 JP H0466379 B2 JPH0466379 B2 JP H0466379B2 JP 11189886 A JP11189886 A JP 11189886A JP 11189886 A JP11189886 A JP 11189886A JP H0466379 B2 JPH0466379 B2 JP H0466379B2
Authority
JP
Japan
Prior art keywords
film
bonding layer
forming
shallow
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11189886A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62266829A (ja
Inventor
Masahiro Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11189886A priority Critical patent/JPS62266829A/ja
Publication of JPS62266829A publication Critical patent/JPS62266829A/ja
Publication of JPH0466379B2 publication Critical patent/JPH0466379B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP11189886A 1986-05-14 1986-05-14 浅い接合層の形成方法 Granted JPS62266829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11189886A JPS62266829A (ja) 1986-05-14 1986-05-14 浅い接合層の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11189886A JPS62266829A (ja) 1986-05-14 1986-05-14 浅い接合層の形成方法

Publications (2)

Publication Number Publication Date
JPS62266829A JPS62266829A (ja) 1987-11-19
JPH0466379B2 true JPH0466379B2 (enrdf_load_stackoverflow) 1992-10-23

Family

ID=14572897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11189886A Granted JPS62266829A (ja) 1986-05-14 1986-05-14 浅い接合層の形成方法

Country Status (1)

Country Link
JP (1) JPS62266829A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644559B2 (ja) * 1987-09-04 1994-06-08 株式会社東芝 半導体集積回路の製造方法
JPH0291932A (ja) * 1988-09-28 1990-03-30 Fujitsu Ltd 半導体装置の製造方法
JP2810947B2 (ja) * 1990-01-19 1998-10-15 日本電信電話株式会社 半導体装置の製造方法
JPH04245424A (ja) * 1991-01-30 1992-09-02 Nippon Precision Circuits Kk 半導体装置の製造方法
EP0853815A4 (en) * 1995-10-04 1999-10-27 Intel Corp DOPE GLASS SOURCE AND DRAIN REGION FORMATION
WO2014064873A1 (ja) * 2012-10-22 2014-05-01 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS62266829A (ja) 1987-11-19

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