JPH0221148B2 - - Google Patents

Info

Publication number
JPH0221148B2
JPH0221148B2 JP56194974A JP19497481A JPH0221148B2 JP H0221148 B2 JPH0221148 B2 JP H0221148B2 JP 56194974 A JP56194974 A JP 56194974A JP 19497481 A JP19497481 A JP 19497481A JP H0221148 B2 JPH0221148 B2 JP H0221148B2
Authority
JP
Japan
Prior art keywords
source
drain
less
annealing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56194974A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5896763A (ja
Inventor
Juri Kato
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56194974A priority Critical patent/JPS5896763A/ja
Publication of JPS5896763A publication Critical patent/JPS5896763A/ja
Publication of JPH0221148B2 publication Critical patent/JPH0221148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56194974A 1981-12-03 1981-12-03 絶縁ゲート型電界効果トランジスタ素子の製造方法 Granted JPS5896763A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56194974A JPS5896763A (ja) 1981-12-03 1981-12-03 絶縁ゲート型電界効果トランジスタ素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194974A JPS5896763A (ja) 1981-12-03 1981-12-03 絶縁ゲート型電界効果トランジスタ素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1033138A Division JPH02353A (ja) 1989-02-13 1989-02-13 Ｃｍｏｓ型半導体装置

Publications (2)

Publication Number Publication Date
JPS5896763A JPS5896763A (ja) 1983-06-08
JPH0221148B2 true JPH0221148B2 (enrdf_load_stackoverflow) 1990-05-11

Family

ID=16333434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194974A Granted JPS5896763A (ja) 1981-12-03 1981-12-03 絶縁ゲート型電界効果トランジスタ素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5896763A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601862A (ja) * 1983-06-20 1985-01-08 Seiko Epson Corp 半導体装置の製造方法
JPS6077419A (ja) * 1983-10-04 1985-05-02 Seiko Epson Corp 半導体装置の製造方法
JP2534608B2 (ja) * 1993-01-18 1996-09-18 セイコーエプソン株式会社 半導体装置の製造方法
JP3221484B2 (ja) 1998-03-04 2001-10-22 日本電気株式会社 半導体装置の製造方法
JP2002332073A (ja) * 2001-05-08 2002-11-22 Rootarii Kk 微小穿孔シート

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LETT INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON=1980 *
JAPANESE JOURNAL OF APPLIED PHYSICS RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP=1980 *

Also Published As

Publication number Publication date
JPS5896763A (ja) 1983-06-08

Similar Documents

Publication Publication Date Title
JP3211394B2 (ja) 半導体装置の製造方法
US7696049B2 (en) Method to manufacture LDMOS transistors with improved threshold voltage control
JP3277533B2 (ja) 半導体装置の製造方法
US5933740A (en) RTP booster to semiconductor device anneal
JPH0221148B2 (enrdf_load_stackoverflow)
JP3165051B2 (ja) 半導体素子のウェル形成方法
JPH0466379B2 (enrdf_load_stackoverflow)
JPH0526343B2 (enrdf_load_stackoverflow)
JPH0677155A (ja) 半導体基板の熱処理方法
JP2764727B2 (ja) 半導体装置の製造方法
JPH02353A (ja) Ｃｍｏｓ型半導体装置
CN100456425C (zh) 制作半导体器件的方法和利用这种方法得到的半导体器件
JPH05308129A (ja) 絶縁ゲート型電界効果トランジスタ
JP3258817B2 (ja) ゲート電極の作製方法
JPH04113634A (ja) 半導体装置の製造方法
JPH0521461A (ja) 半導体装置の製造方法
JP2544806B2 (ja) 半導体装置の製造方法
JPS62266830A (ja) 浅い接合層の形成方法
JP2601209B2 (ja) 半導体装置の製造方法
JPH01220438A (ja) 半導体装置の製造方法
JPH07321313A (ja) 半導体デバイスの製造方法
JPH06350086A (ja) 半導体装置の製造方法
JP2570292B2 (ja) 半導体装置の製造方法
JP3525464B2 (ja) 半導体装置及び半導体装置の製造方法
JPS58178561A (ja) 半導体装置の製造方法