JPH0465550B2 - - Google Patents

Info

Publication number
JPH0465550B2
JPH0465550B2 JP58184607A JP18460783A JPH0465550B2 JP H0465550 B2 JPH0465550 B2 JP H0465550B2 JP 58184607 A JP58184607 A JP 58184607A JP 18460783 A JP18460783 A JP 18460783A JP H0465550 B2 JPH0465550 B2 JP H0465550B2
Authority
JP
Japan
Prior art keywords
semiconductor
insulated gate
semiconductor device
insulator
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58184607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6076170A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58184607A priority Critical patent/JPS6076170A/ja
Publication of JPS6076170A publication Critical patent/JPS6076170A/ja
Publication of JPH0465550B2 publication Critical patent/JPH0465550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58184607A 1983-10-03 1983-10-03 絶縁ゲイト型半導体装置作製方法 Granted JPS6076170A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58184607A JPS6076170A (ja) 1983-10-03 1983-10-03 絶縁ゲイト型半導体装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58184607A JPS6076170A (ja) 1983-10-03 1983-10-03 絶縁ゲイト型半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS6076170A JPS6076170A (ja) 1985-04-30
JPH0465550B2 true JPH0465550B2 (enrdf_load_stackoverflow) 1992-10-20

Family

ID=16156175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58184607A Granted JPS6076170A (ja) 1983-10-03 1983-10-03 絶縁ゲイト型半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPS6076170A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2201544A (en) * 1987-02-27 1988-09-01 Philips Electronic Associated Vertical thin film transistor
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2593641B2 (ja) * 1981-11-09 1997-03-26 株式会社 半導体エネルギー研究所 絶縁ゲート型電界効果半導体装置
JPS5897868A (ja) * 1981-12-08 1983-06-10 Canon Inc 多結晶薄膜トランジスタ
JPS59208783A (ja) * 1983-05-12 1984-11-27 Seiko Instr & Electronics Ltd 薄膜トランジスタ

Also Published As

Publication number Publication date
JPS6076170A (ja) 1985-04-30

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