JPH0465033B2 - - Google Patents
Info
- Publication number
- JPH0465033B2 JPH0465033B2 JP24511090A JP24511090A JPH0465033B2 JP H0465033 B2 JPH0465033 B2 JP H0465033B2 JP 24511090 A JP24511090 A JP 24511090A JP 24511090 A JP24511090 A JP 24511090A JP H0465033 B2 JPH0465033 B2 JP H0465033B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- crystal
- shutter
- gaas
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 68
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 40
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 23
- 230000004907 flux Effects 0.000 description 22
- 239000010408 film Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 238000011084 recovery Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000002356 single layer Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24511090A JPH03115190A (ja) | 1990-09-14 | 1990-09-14 | 混晶組成比決定法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24511090A JPH03115190A (ja) | 1990-09-14 | 1990-09-14 | 混晶組成比決定法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16912584A Division JPS61222986A (ja) | 1984-08-13 | 1984-08-13 | 結晶成長膜厚制御法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03115190A JPH03115190A (ja) | 1991-05-16 |
| JPH0465033B2 true JPH0465033B2 (enExample) | 1992-10-16 |
Family
ID=17128772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24511090A Granted JPH03115190A (ja) | 1990-09-14 | 1990-09-14 | 混晶組成比決定法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03115190A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5480813A (en) * | 1994-06-21 | 1996-01-02 | At&T Corp. | Accurate in-situ lattice matching by reflection high energy electron diffraction |
-
1990
- 1990-09-14 JP JP24511090A patent/JPH03115190A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03115190A (ja) | 1991-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |