JPH03115190A - 混晶組成比決定法 - Google Patents

混晶組成比決定法

Info

Publication number
JPH03115190A
JPH03115190A JP24511090A JP24511090A JPH03115190A JP H03115190 A JPH03115190 A JP H03115190A JP 24511090 A JP24511090 A JP 24511090A JP 24511090 A JP24511090 A JP 24511090A JP H03115190 A JPH03115190 A JP H03115190A
Authority
JP
Japan
Prior art keywords
growth
crystal
image
mixed crystal
composition ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24511090A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0465033B2 (enExample
Inventor
Kimihiro Ota
太田　公廣
Suminori Sakamoto
坂本　統徳
Itaru Nakagawa
格 中川
Naoyuki Kawai
直行 河合
Takeshi Kojima
猛 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP24511090A priority Critical patent/JPH03115190A/ja
Publication of JPH03115190A publication Critical patent/JPH03115190A/ja
Publication of JPH0465033B2 publication Critical patent/JPH0465033B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP24511090A 1990-09-14 1990-09-14 混晶組成比決定法 Granted JPH03115190A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24511090A JPH03115190A (ja) 1990-09-14 1990-09-14 混晶組成比決定法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24511090A JPH03115190A (ja) 1990-09-14 1990-09-14 混晶組成比決定法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP16912584A Division JPS61222986A (ja) 1984-08-13 1984-08-13 結晶成長膜厚制御法

Publications (2)

Publication Number Publication Date
JPH03115190A true JPH03115190A (ja) 1991-05-16
JPH0465033B2 JPH0465033B2 (enExample) 1992-10-16

Family

ID=17128772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24511090A Granted JPH03115190A (ja) 1990-09-14 1990-09-14 混晶組成比決定法

Country Status (1)

Country Link
JP (1) JPH03115190A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0689230A3 (en) * 1994-06-21 1996-07-03 At & T Corp Method for the growth of semiconductor layers with suitable lattice parameters

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0689230A3 (en) * 1994-06-21 1996-07-03 At & T Corp Method for the growth of semiconductor layers with suitable lattice parameters

Also Published As

Publication number Publication date
JPH0465033B2 (enExample) 1992-10-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term