JPH0358645B2 - - Google Patents
Info
- Publication number
- JPH0358645B2 JPH0358645B2 JP59169126A JP16912684A JPH0358645B2 JP H0358645 B2 JPH0358645 B2 JP H0358645B2 JP 59169126 A JP59169126 A JP 59169126A JP 16912684 A JP16912684 A JP 16912684A JP H0358645 B2 JPH0358645 B2 JP H0358645B2
- Authority
- JP
- Japan
- Prior art keywords
- diffraction
- intensity
- electron beam
- crystal
- line image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 49
- 238000010894 electron beam technology Methods 0.000 claims description 35
- 238000000691 measurement method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 26
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 24
- 238000010586 diagram Methods 0.000 description 19
- 239000010409 thin film Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 16
- 230000010355 oscillation Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169126A JPS6147507A (ja) | 1984-08-13 | 1984-08-13 | 結晶膜厚測定法 |
| US07/092,348 US4855013A (en) | 1984-08-13 | 1987-09-02 | Method for controlling the thickness of a thin crystal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169126A JPS6147507A (ja) | 1984-08-13 | 1984-08-13 | 結晶膜厚測定法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6147507A JPS6147507A (ja) | 1986-03-08 |
| JPH0358645B2 true JPH0358645B2 (enExample) | 1991-09-06 |
Family
ID=15880759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59169126A Granted JPS6147507A (ja) | 1984-08-13 | 1984-08-13 | 結晶膜厚測定法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6147507A (enExample) |
-
1984
- 1984-08-13 JP JP59169126A patent/JPS6147507A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6147507A (ja) | 1986-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |