JPH0336795B2 - - Google Patents
Info
- Publication number
- JPH0336795B2 JPH0336795B2 JP60154503A JP15450385A JPH0336795B2 JP H0336795 B2 JPH0336795 B2 JP H0336795B2 JP 60154503 A JP60154503 A JP 60154503A JP 15450385 A JP15450385 A JP 15450385A JP H0336795 B2 JPH0336795 B2 JP H0336795B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growth
- crystal
- vibration
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15450385A JPS6217093A (ja) | 1985-07-13 | 1985-07-13 | 薄膜結晶成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15450385A JPS6217093A (ja) | 1985-07-13 | 1985-07-13 | 薄膜結晶成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6217093A JPS6217093A (ja) | 1987-01-26 |
| JPH0336795B2 true JPH0336795B2 (enExample) | 1991-06-03 |
Family
ID=15585664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15450385A Granted JPS6217093A (ja) | 1985-07-13 | 1985-07-13 | 薄膜結晶成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6217093A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927894B2 (en) | 2001-05-23 | 2005-08-09 | E-Vision, Llc | Mirror assemblies incorporating variable index of refraction materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146177A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Fabrication method of basic plate for diode device |
| JPS6027689A (ja) * | 1983-07-26 | 1985-02-12 | Agency Of Ind Science & Technol | AlGaAs結晶の分子線結晶成長法 |
-
1985
- 1985-07-13 JP JP15450385A patent/JPS6217093A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217093A (ja) | 1987-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |