JPS6217093A - 薄膜結晶成長法 - Google Patents
薄膜結晶成長法Info
- Publication number
- JPS6217093A JPS6217093A JP15450385A JP15450385A JPS6217093A JP S6217093 A JPS6217093 A JP S6217093A JP 15450385 A JP15450385 A JP 15450385A JP 15450385 A JP15450385 A JP 15450385A JP S6217093 A JPS6217093 A JP S6217093A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- growth
- growing
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000010894 electron beam technology Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 51
- 238000002109 crystal growth method Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 14
- 238000002003 electron diffraction Methods 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 1
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15450385A JPS6217093A (ja) | 1985-07-13 | 1985-07-13 | 薄膜結晶成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15450385A JPS6217093A (ja) | 1985-07-13 | 1985-07-13 | 薄膜結晶成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6217093A true JPS6217093A (ja) | 1987-01-26 |
| JPH0336795B2 JPH0336795B2 (enExample) | 1991-06-03 |
Family
ID=15585664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15450385A Granted JPS6217093A (ja) | 1985-07-13 | 1985-07-13 | 薄膜結晶成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6217093A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927894B2 (en) | 2001-05-23 | 2005-08-09 | E-Vision, Llc | Mirror assemblies incorporating variable index of refraction materials |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146177A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Fabrication method of basic plate for diode device |
| JPS6027689A (ja) * | 1983-07-26 | 1985-02-12 | Agency Of Ind Science & Technol | ＡｌＧａＡｓ結晶の分子線結晶成長法 |
-
1985
- 1985-07-13 JP JP15450385A patent/JPS6217093A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146177A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Fabrication method of basic plate for diode device |
| JPS6027689A (ja) * | 1983-07-26 | 1985-02-12 | Agency Of Ind Science & Technol | ＡｌＧａＡｓ結晶の分子線結晶成長法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927894B2 (en) | 2001-05-23 | 2005-08-09 | E-Vision, Llc | Mirror assemblies incorporating variable index of refraction materials |
| US7092144B2 (en) | 2001-05-23 | 2006-08-15 | Intellimats, Llc | Mirror assemblies incorporating variable index of refraction materials |
| US7619809B2 (en) | 2001-05-23 | 2009-11-17 | E-Vision, Llc | Mirror assemblies incorporating variable index of refraction materials |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336795B2 (enExample) | 1991-06-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |