JPH0330286B2 - - Google Patents

Info

Publication number
JPH0330286B2
JPH0330286B2 JP62224158A JP22415887A JPH0330286B2 JP H0330286 B2 JPH0330286 B2 JP H0330286B2 JP 62224158 A JP62224158 A JP 62224158A JP 22415887 A JP22415887 A JP 22415887A JP H0330286 B2 JPH0330286 B2 JP H0330286B2
Authority
JP
Japan
Prior art keywords
substrate
molecular beam
monoatomic
layer
shutter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62224158A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6468917A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP22415887A priority Critical patent/JPS6468917A/ja
Publication of JPS6468917A publication Critical patent/JPS6468917A/ja
Publication of JPH0330286B2 publication Critical patent/JPH0330286B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22415887A 1987-09-09 1987-09-09 Single atomic layer growth method Granted JPS6468917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22415887A JPS6468917A (en) 1987-09-09 1987-09-09 Single atomic layer growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22415887A JPS6468917A (en) 1987-09-09 1987-09-09 Single atomic layer growth method

Publications (2)

Publication Number Publication Date
JPS6468917A JPS6468917A (en) 1989-03-15
JPH0330286B2 true JPH0330286B2 (enExample) 1991-04-26

Family

ID=16809442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22415887A Granted JPS6468917A (en) 1987-09-09 1987-09-09 Single atomic layer growth method

Country Status (1)

Country Link
JP (1) JPS6468917A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190920A (ja) * 1985-02-19 1986-08-25 Fujitsu Ltd 分子線結晶成長装置
JPH0831410B2 (ja) * 1985-05-09 1996-03-27 富士通株式会社 半導体装置の製造方法
JPS6245107A (ja) * 1985-08-23 1987-02-27 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法

Also Published As

Publication number Publication date
JPS6468917A (en) 1989-03-15

Similar Documents

Publication Publication Date Title
US5552327A (en) Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
EP0110468B1 (en) Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device
US5625204A (en) Compound semiconductors and a method for thin film growth
CN113358677B (zh) 在GaSb衬底上生长InAs层的生长速度测定方法
JPH03164497A (ja) 化合物結晶のエピタキシャル成長方法
JPH0330286B2 (enExample)
Dietz et al. Real-time monitoring of epitaxial processes by parallel-polarized reflectance spectroscopy
Chen et al. Determination of crystal misorientation in epitaxial lateral overgrowth of GaN
KR950007482B1 (ko) 기상성장방법
CA2555582C (en) Group i-vii semiconductor single crystal thin film and process for producing same
JP2723906B2 (ja) 薄膜結晶成長制御方法
JP3064693B2 (ja) 多層膜の結晶成長のその場観察方法
JPS60112692A (ja) 分子線エピタキシアル成長法
Lyapustin et al. Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy
JP2759298B2 (ja) 薄膜の形成方法
JPH06291065A (ja) 半導体結晶の成長方法
JPH0465033B2 (enExample)
JPH0331677B2 (enExample)
CN118858338A (zh) 一种分子束外延超晶格材料生长速率的测试方法
JP3335671B2 (ja) 原子層成長による量子細線および量子箱の形成方法
Sukidi et al. GaxIn1-xP/GaP Heterostructures on Si (001) Substrate
JPH0722134B2 (ja) 気相成長方法
JPH0689860A (ja) 半導体結晶成長方法および分子線エピタクシー装置
Patterson Qualitative Control of Molecular Beam Epitaxy
JPH05201792A (ja) 薄膜結晶製造装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term