JPS6468917A - Single atomic layer growth method - Google Patents

Single atomic layer growth method

Info

Publication number
JPS6468917A
JPS6468917A JP22415887A JP22415887A JPS6468917A JP S6468917 A JPS6468917 A JP S6468917A JP 22415887 A JP22415887 A JP 22415887A JP 22415887 A JP22415887 A JP 22415887A JP S6468917 A JPS6468917 A JP S6468917A
Authority
JP
Japan
Prior art keywords
substrate
atomic layer
molecular beam
single atomic
smoothing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22415887A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330286B2 (enExample
Inventor
Kazuto Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP22415887A priority Critical patent/JPS6468917A/ja
Publication of JPS6468917A publication Critical patent/JPS6468917A/ja
Publication of JPH0330286B2 publication Critical patent/JPH0330286B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22415887A 1987-09-09 1987-09-09 Single atomic layer growth method Granted JPS6468917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22415887A JPS6468917A (en) 1987-09-09 1987-09-09 Single atomic layer growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22415887A JPS6468917A (en) 1987-09-09 1987-09-09 Single atomic layer growth method

Publications (2)

Publication Number Publication Date
JPS6468917A true JPS6468917A (en) 1989-03-15
JPH0330286B2 JPH0330286B2 (enExample) 1991-04-26

Family

ID=16809442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22415887A Granted JPS6468917A (en) 1987-09-09 1987-09-09 Single atomic layer growth method

Country Status (1)

Country Link
JP (1) JPS6468917A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190920A (ja) * 1985-02-19 1986-08-25 Fujitsu Ltd 分子線結晶成長装置
JPS61256624A (ja) * 1985-05-09 1986-11-14 Fujitsu Ltd 半導体装置の製造方法
JPS6245107A (ja) * 1985-08-23 1987-02-27 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190920A (ja) * 1985-02-19 1986-08-25 Fujitsu Ltd 分子線結晶成長装置
JPS61256624A (ja) * 1985-05-09 1986-11-14 Fujitsu Ltd 半導体装置の製造方法
JPS6245107A (ja) * 1985-08-23 1987-02-27 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法

Also Published As

Publication number Publication date
JPH0330286B2 (enExample) 1991-04-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term