JPH0144680B2 - - Google Patents
Info
- Publication number
- JPH0144680B2 JPH0144680B2 JP52484A JP52484A JPH0144680B2 JP H0144680 B2 JPH0144680 B2 JP H0144680B2 JP 52484 A JP52484 A JP 52484A JP 52484 A JP52484 A JP 52484A JP H0144680 B2 JPH0144680 B2 JP H0144680B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- thin film
- cell
- molecular beam
- cell shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52484A JPS60145998A (ja) | 1984-01-07 | 1984-01-07 | Mbe成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52484A JPS60145998A (ja) | 1984-01-07 | 1984-01-07 | Mbe成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60145998A JPS60145998A (ja) | 1985-08-01 |
| JPH0144680B2 true JPH0144680B2 (enExample) | 1989-09-28 |
Family
ID=11476152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52484A Granted JPS60145998A (ja) | 1984-01-07 | 1984-01-07 | Mbe成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60145998A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6261315A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 分子線エピタキシ−装置 |
| JPH05114768A (ja) * | 1991-04-12 | 1993-05-07 | Texas Instr Inc <Ti> | 超格子の形成方法 |
-
1984
- 1984-01-07 JP JP52484A patent/JPS60145998A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60145998A (ja) | 1985-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Arthur | Molecular beam epitaxy | |
| US5847397A (en) | Photodetectors using III-V nitrides | |
| US5316615A (en) | Surfactant-enhanced epitaxy | |
| Delorme et al. | Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys | |
| Parker et al. | Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE | |
| US5490880A (en) | Compound semiconductors and a method for thin film growth | |
| Kim et al. | Thermal-strain-induced splitting of heavy-and light-hole exciton energies in CuI thin films grown by vacuum evaporation | |
| Feng et al. | New III–V semiconductor InGaAsBi alloy grown by molecular beam epitaxy | |
| Cheng et al. | Molecular‐beam epitaxial growth of uniform Ga0. 47In0. 53As with a rotating sample holder | |
| Tadokoro et al. | Growth and characterization of CdS epilayers on (100) GaAs by atomic layer epitaxy | |
| JPH0144680B2 (enExample) | ||
| US4935382A (en) | Method of making a semiconductor-insulator-semiconductor structure | |
| US5628834A (en) | Surfactant-enhanced epitaxy | |
| Moiseev et al. | Type II broken-gap InAs/GaIn0. 17As0. 22Sb heterostructures with abrupt planar interface | |
| JPS60100422A (ja) | 単結晶薄膜周期構造を形成するためのmbe成長方法 | |
| JPS6247839B2 (enExample) | ||
| JPS63137415A (ja) | 単結晶薄膜の形成方法 | |
| JPS6247840B2 (enExample) | ||
| Brunner et al. | Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown Si1-xGex quantum wells | |
| Van Hove et al. | Analysis of growth parameters and strain in GaInSb/InAs superlattices | |
| JPS61270813A (ja) | 分子線エピタキシヤル成長装置 | |
| JP2563530B2 (ja) | 超格子構造素子 | |
| JP2612467B2 (ja) | 異種構造薄膜同時成長装置 | |
| EP0062818A1 (en) | Process of producing a Hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor | |
| JPS60152022A (ja) | 分子線エピタキシヤル成長装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |