JPS60145998A - Ｍｂｅ成長方法 - Google Patents

Ｍｂｅ成長方法

Info

Publication number
JPS60145998A
JPS60145998A JP52484A JP52484A JPS60145998A JP S60145998 A JPS60145998 A JP S60145998A JP 52484 A JP52484 A JP 52484A JP 52484 A JP52484 A JP 52484A JP S60145998 A JPS60145998 A JP S60145998A
Authority
JP
Japan
Prior art keywords
thin film
group
cell
hole
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP52484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0144680B2 (enExample
Inventor
Hideki Hayashi
秀樹 林
Yuichi Matsui
松居　祐一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP52484A priority Critical patent/JPS60145998A/ja
Publication of JPS60145998A publication Critical patent/JPS60145998A/ja
Publication of JPH0144680B2 publication Critical patent/JPH0144680B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP52484A 1984-01-07 1984-01-07 Ｍｂｅ成長方法 Granted JPS60145998A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52484A JPS60145998A (ja) 1984-01-07 1984-01-07 Ｍｂｅ成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52484A JPS60145998A (ja) 1984-01-07 1984-01-07 Ｍｂｅ成長方法

Publications (2)

Publication Number Publication Date
JPS60145998A true JPS60145998A (ja) 1985-08-01
JPH0144680B2 JPH0144680B2 (enExample) 1989-09-28

Family

ID=11476152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52484A Granted JPS60145998A (ja) 1984-01-07 1984-01-07 Ｍｂｅ成長方法

Country Status (1)

Country Link
JP (1) JPS60145998A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587040A1 (fr) * 1985-09-11 1987-03-13 Sharp Kk Appareil de croissance epitaxiale par faisceaux moleculaires
US5415128A (en) * 1991-04-12 1995-05-16 Texas Instruments Incorporated Rotation induced superlattice

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587040A1 (fr) * 1985-09-11 1987-03-13 Sharp Kk Appareil de croissance epitaxiale par faisceaux moleculaires
US5415128A (en) * 1991-04-12 1995-05-16 Texas Instruments Incorporated Rotation induced superlattice

Also Published As

Publication number Publication date
JPH0144680B2 (enExample) 1989-09-28

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term