JPH0454393B2 - - Google Patents

Info

Publication number
JPH0454393B2
JPH0454393B2 JP58171419A JP17141983A JPH0454393B2 JP H0454393 B2 JPH0454393 B2 JP H0454393B2 JP 58171419 A JP58171419 A JP 58171419A JP 17141983 A JP17141983 A JP 17141983A JP H0454393 B2 JPH0454393 B2 JP H0454393B2
Authority
JP
Japan
Prior art keywords
layer
silicon
semiconductor
tungsten
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58171419A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5974668A (ja
Inventor
Osama Aboorufuoto Mohamedo
Ran Tsuangu Yuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5974668A publication Critical patent/JPS5974668A/ja
Publication of JPH0454393B2 publication Critical patent/JPH0454393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP58171419A 1982-09-20 1983-09-19 集積回路接点構造体 Granted JPS5974668A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41967782A 1982-09-20 1982-09-20
US419677 1982-09-20

Publications (2)

Publication Number Publication Date
JPS5974668A JPS5974668A (ja) 1984-04-27
JPH0454393B2 true JPH0454393B2 (enExample) 1992-08-31

Family

ID=23663275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58171419A Granted JPS5974668A (ja) 1982-09-20 1983-09-19 集積回路接点構造体

Country Status (3)

Country Link
EP (1) EP0104079B1 (enExample)
JP (1) JPS5974668A (enExample)
DE (1) DE3380469D1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741757B2 (ja) * 1986-04-30 1998-04-22 株式会社日立製作所 半導体装置及びその製造方法
JPS6316671A (ja) * 1986-07-08 1988-01-23 Nec Corp シリサイドゲ−ト半導体装置の製造方法
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
JP2818060B2 (ja) * 1991-11-01 1998-10-30 シャープ株式会社 半導体装置の製造方法
JP2690468B2 (ja) * 1995-03-24 1997-12-10 株式会社日立製作所 半導体装置
ES2358740T3 (es) * 2003-05-28 2011-05-13 Otsuka Pharmaceutical Co., Ltd. Solución acuosa de olanexidina, procedimiento para su preparación y desinfectante.
JP4750586B2 (ja) * 2006-02-28 2011-08-17 住友電工デバイス・イノベーション株式会社 半導体装置および電子装置並びにその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833842A (en) * 1970-03-09 1974-09-03 Texas Instruments Inc Modified tungsten metallization for semiconductor devices
JPS50120581A (enExample) * 1974-03-07 1975-09-20
JPS5950104B2 (ja) * 1975-11-13 1984-12-06 日本電気株式会社 ハンドウタイソウチ
US4300149A (en) * 1979-09-04 1981-11-10 International Business Machines Corporation Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements
JPS56134757A (en) * 1980-03-26 1981-10-21 Nec Corp Complementary type mos semiconductor device and its manufacture

Also Published As

Publication number Publication date
EP0104079B1 (en) 1989-08-23
EP0104079A3 (en) 1986-08-20
JPS5974668A (ja) 1984-04-27
DE3380469D1 (en) 1989-09-28
EP0104079A2 (en) 1984-03-28

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