JPH0449785B2 - - Google Patents
Info
- Publication number
- JPH0449785B2 JPH0449785B2 JP60034391A JP3439185A JPH0449785B2 JP H0449785 B2 JPH0449785 B2 JP H0449785B2 JP 60034391 A JP60034391 A JP 60034391A JP 3439185 A JP3439185 A JP 3439185A JP H0449785 B2 JPH0449785 B2 JP H0449785B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitive element
- integrated circuit
- circuit device
- semiconductor integrated
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000011148 porous material Substances 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 238000003860 storage Methods 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60034391A JPS61194867A (ja) | 1985-02-25 | 1985-02-25 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60034391A JPS61194867A (ja) | 1985-02-25 | 1985-02-25 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194867A JPS61194867A (ja) | 1986-08-29 |
| JPH0449785B2 true JPH0449785B2 (enExample) | 1992-08-12 |
Family
ID=12412865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60034391A Granted JPS61194867A (ja) | 1985-02-25 | 1985-02-25 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194867A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320215B1 (en) | 1999-07-22 | 2001-11-20 | International Business Machines Corporation | Crystal-axis-aligned vertical side wall device |
| EP1292982A2 (en) * | 2000-06-21 | 2003-03-19 | Infineon Technologies North America Corp. | Gate oxidation for vertical trench device |
| US11491291B2 (en) * | 2015-03-31 | 2022-11-08 | Fisher & Paykel Healthcare Limited | Methods and apparatus for oxygenation and/or CO2 removal |
-
1985
- 1985-02-25 JP JP60034391A patent/JPS61194867A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61194867A (ja) | 1986-08-29 |
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