JPS61194867A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS61194867A
JPS61194867A JP60034391A JP3439185A JPS61194867A JP S61194867 A JPS61194867 A JP S61194867A JP 60034391 A JP60034391 A JP 60034391A JP 3439185 A JP3439185 A JP 3439185A JP S61194867 A JPS61194867 A JP S61194867A
Authority
JP
Japan
Prior art keywords
capacitive element
integrated circuit
semiconductor integrated
circuit device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60034391A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449785B2 (enExample
Inventor
Yoshihisa Koyama
小山　芳久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP60034391A priority Critical patent/JPS61194867A/ja
Publication of JPS61194867A publication Critical patent/JPS61194867A/ja
Publication of JPH0449785B2 publication Critical patent/JPH0449785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP60034391A 1985-02-25 1985-02-25 半導体集積回路装置 Granted JPS61194867A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60034391A JPS61194867A (ja) 1985-02-25 1985-02-25 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60034391A JPS61194867A (ja) 1985-02-25 1985-02-25 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS61194867A true JPS61194867A (ja) 1986-08-29
JPH0449785B2 JPH0449785B2 (enExample) 1992-08-12

Family

ID=12412865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60034391A Granted JPS61194867A (ja) 1985-02-25 1985-02-25 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS61194867A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320215B1 (en) * 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
WO2001099162A3 (en) * 2000-06-21 2002-07-18 Infineon Technologies Corp Gate oxidation for vertical trench device
JP2018512949A (ja) * 2015-03-31 2018-05-24 フィッシャー アンド ペイケル ヘルスケア リミテッド 酸素化および／またはｃｏ２クリアランスのための方法ならびに装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320215B1 (en) * 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6426251B2 (en) 1999-07-22 2002-07-30 International Business Machines Corporation Process for manufacturing a crystal axis-aligned vertical side wall device
WO2001099162A3 (en) * 2000-06-21 2002-07-18 Infineon Technologies Corp Gate oxidation for vertical trench device
JP2018512949A (ja) * 2015-03-31 2018-05-24 フィッシャー アンド ペイケル ヘルスケア リミテッド 酸素化および／またはｃｏ２クリアランスのための方法ならびに装置

Also Published As

Publication number Publication date
JPH0449785B2 (enExample) 1992-08-12

Similar Documents

Publication Publication Date Title
US5218219A (en) Semiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit region
US5032882A (en) Semiconductor device having trench type structure
JPH01179449A (ja) 半導体記憶装置
KR840007312A (ko) 적층 캐패시터형 메모리셀을 갖춘 반도체 기억장치
US6740924B2 (en) Semiconductor integrated circuit device and the method of producing the same
JPS60214558A (ja) 半導体装置の製造方法
US4131906A (en) Dynamic random access memory using MOS FETs and method for manufacturing same
US5229314A (en) Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
JP2940169B2 (ja) 半導体メモリ装置
KR100528352B1 (ko) Dram-셀장치및그제조방법
JP2941039B2 (ja) 半導体メモリ装置の製造方法
US5010379A (en) Semiconductor memory device with two storage nodes
JPH0529573A (ja) 半導体記憶装置およびその製造方法
JPH0576785B2 (enExample)
US20250133752A1 (en) Stack type semiconductor memory device
JPS61194867A (ja) 半導体集積回路装置
US4961095A (en) Semiconductor memory device with word lines adjacent and non-intersecting with capacitor grooves
JPH02198170A (ja) 半導体集積回路装置及びその製造方法
US4173819A (en) Method of manufacturing a dynamic random access memory using MOS FETS
JPH0982904A (ja) ダイナミック型メモリ及びその製造方法
JP2969876B2 (ja) 半導体装置およびその製造方法
JPH0691216B2 (ja) 半導体記憶装置
JPS5838939B2 (ja) 集積回路
JPS59210663A (ja) 半導体メモリ装置
US5157469A (en) Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators