JPH0448855B2 - - Google Patents
Info
- Publication number
- JPH0448855B2 JPH0448855B2 JP61082181A JP8218186A JPH0448855B2 JP H0448855 B2 JPH0448855 B2 JP H0448855B2 JP 61082181 A JP61082181 A JP 61082181A JP 8218186 A JP8218186 A JP 8218186A JP H0448855 B2 JPH0448855 B2 JP H0448855B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- alloy
- alloying elements
- group
- electromigration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 27
- 238000005275 alloying Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000002244 precipitate Substances 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 238000005324 grain boundary diffusion Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910018182 Al—Cu Inorganic materials 0.000 description 3
- 229910017758 Cu-Si Inorganic materials 0.000 description 3
- 229910017931 Cu—Si Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001818 nuclear effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8218186A JPS62240733A (ja) | 1986-04-11 | 1986-04-11 | 半導体配線材料用ｂ含有アルミニウム合金 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8218186A JPS62240733A (ja) | 1986-04-11 | 1986-04-11 | 半導体配線材料用ｂ含有アルミニウム合金 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62240733A JPS62240733A (ja) | 1987-10-21 |
| JPH0448855B2 true JPH0448855B2 (fr) | 1992-08-07 |
Family
ID=13767266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8218186A Granted JPS62240733A (ja) | 1986-04-11 | 1986-04-11 | 半導体配線材料用ｂ含有アルミニウム合金 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62240733A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554889A (en) * | 1992-04-03 | 1996-09-10 | Motorola, Inc. | Structure and method for metallization of semiconductor devices |
| EP0606761A3 (fr) * | 1992-12-28 | 1995-02-08 | Kawasaki Steel Co | Dispositif semi-conducteur et procédé pour fabriquer celui-ci. |
| FR2756572B1 (fr) * | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
| US6465376B2 (en) | 1999-08-18 | 2002-10-15 | International Business Machines Corporation | Method and structure for improving electromigration of chip interconnects |
| US20010047838A1 (en) | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100644A (ja) * | 1983-11-02 | 1985-06-04 | Sumitomo Electric Ind Ltd | ボンデイングワイヤ用アルミニウム合金 |
| JPS60248861A (ja) * | 1984-05-22 | 1985-12-09 | Sumitomo Electric Ind Ltd | ボンデイングワイヤ用アルミニウム合金 |
| JPS619536A (ja) * | 1984-06-21 | 1986-01-17 | Sumitomo Electric Ind Ltd | ボンディングワイヤ用アルミ合金細線の製造方法 |
-
1986
- 1986-04-11 JP JP8218186A patent/JPS62240733A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100644A (ja) * | 1983-11-02 | 1985-06-04 | Sumitomo Electric Ind Ltd | ボンデイングワイヤ用アルミニウム合金 |
| JPS60248861A (ja) * | 1984-05-22 | 1985-12-09 | Sumitomo Electric Ind Ltd | ボンデイングワイヤ用アルミニウム合金 |
| JPS619536A (ja) * | 1984-06-21 | 1986-01-17 | Sumitomo Electric Ind Ltd | ボンディングワイヤ用アルミ合金細線の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62240733A (ja) | 1987-10-21 |
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