JPH0447983B2 - - Google Patents
Info
- Publication number
- JPH0447983B2 JPH0447983B2 JP58120757A JP12075783A JPH0447983B2 JP H0447983 B2 JPH0447983 B2 JP H0447983B2 JP 58120757 A JP58120757 A JP 58120757A JP 12075783 A JP12075783 A JP 12075783A JP H0447983 B2 JPH0447983 B2 JP H0447983B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- potential
- semiconductor region
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 88
- 238000006243 chemical reaction Methods 0.000 claims description 67
- 230000001443 photoexcitation Effects 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 description 73
- 239000003990 capacitor Substances 0.000 description 57
- 238000010586 diagram Methods 0.000 description 53
- 239000012535 impurity Substances 0.000 description 51
- 238000000034 method Methods 0.000 description 50
- 239000010410 layer Substances 0.000 description 43
- 229910004298 SiO 2 Inorganic materials 0.000 description 41
- 239000000758 substrate Substances 0.000 description 39
- 238000003384 imaging method Methods 0.000 description 33
- 239000000969 carrier Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 27
- 238000003860 storage Methods 0.000 description 26
- 238000009825 accumulation Methods 0.000 description 23
- 230000002441 reversible effect Effects 0.000 description 21
- 230000007423 decrease Effects 0.000 description 20
- 230000035945 sensitivity Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 238000002955 isolation Methods 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 230000003321 amplification Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 14
- 238000003199 nucleic acid amplification method Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 230000001052 transient effect Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910017758 Cu-Si Inorganic materials 0.000 description 3
- 229910017931 Cu—Si Inorganic materials 0.000 description 3
- 101100114490 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) cox-13 gene Proteins 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 101150062589 PTGS1 gene Proteins 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- -1 composed of Al Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101150047623 BRINP1 gene Proteins 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14681—Bipolar transistor imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58120757A JPS6012765A (ja) | 1983-07-02 | 1983-07-02 | 光電変換装置 |
| US06/625,130 US4686554A (en) | 1983-07-02 | 1984-06-27 | Photoelectric converter |
| CA000457917A CA1257922A (fr) | 1983-07-02 | 1984-06-29 | Convertisseur photoelectrique |
| EP87110981A EP0252530A3 (fr) | 1983-07-02 | 1984-07-02 | Convertisseur photoélectrique |
| EP19900201220 EP0391502A3 (fr) | 1983-07-02 | 1984-07-02 | Convertisseur photoélectrique |
| DE3486462T DE3486462T2 (de) | 1983-07-02 | 1984-07-02 | Lichtelektrischer Wandler |
| EP87110980A EP0252529A3 (fr) | 1983-07-02 | 1984-07-02 | Convertisseur photoélectrique |
| EP84304517A EP0132076B1 (fr) | 1983-07-02 | 1984-07-02 | Convertisseur photovoltaique |
| US07/001,580 US4791469A (en) | 1983-07-02 | 1987-01-08 | Photoelectric converter |
| US07/250,246 US4916512A (en) | 1983-07-02 | 1988-09-28 | Photoelectric converter |
| US07/746,812 US5128735A (en) | 1983-07-02 | 1991-08-15 | Photoelectric converter with phototransistor and refresh means |
| US07/857,592 US5210434A (en) | 1983-07-02 | 1992-04-24 | Photoelectric converter with scanning circuit |
| US08/025,638 US5563431A (en) | 1983-07-02 | 1993-03-02 | Photoelectrical converter with refresh means |
| US08/472,278 US5604364A (en) | 1983-07-02 | 1995-06-07 | Photoelectric converter with vertical output lines |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58120757A JPS6012765A (ja) | 1983-07-02 | 1983-07-02 | 光電変換装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2172611A Division JPH0340468A (ja) | 1990-07-02 | 1990-07-02 | 光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6012765A JPS6012765A (ja) | 1985-01-23 |
| JPH0447983B2 true JPH0447983B2 (fr) | 1992-08-05 |
Family
ID=14794233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58120757A Granted JPS6012765A (ja) | 1983-07-02 | 1983-07-02 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6012765A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2112000A1 (fr) | 2008-03-27 | 2009-10-28 | Mitsubishi HiTec Paper Flensburg GmbH | Matériel d'enregistrement sensible à la chaleur |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237405A (ja) * | 1985-04-12 | 1986-10-22 | Kanegafuchi Chem Ind Co Ltd | 多極着磁磁石 |
| JP2529188B2 (ja) * | 1985-07-05 | 1996-08-28 | オリンパス光学工業株式会社 | 画像入力装置 |
| JPH084127B2 (ja) * | 1986-09-30 | 1996-01-17 | キヤノン株式会社 | 光電変換装置 |
| US5771070A (en) | 1985-11-15 | 1998-06-23 | Canon Kabushiki Kaisha | Solid state image pickup apparatus removing noise from the photoelectric converted signal |
| US4914519A (en) * | 1986-09-19 | 1990-04-03 | Canon Kabushiki Kaisha | Apparatus for eliminating noise in a solid-state image pickup device |
| ATE163498T1 (de) | 1985-11-15 | 1998-03-15 | Canon Kk | Photoelektrische wandlervorrichtung |
| US5737016A (en) * | 1985-11-15 | 1998-04-07 | Canon Kabushiki Kaisha | Solid state image pickup apparatus for reducing noise |
| JPS62115866A (ja) * | 1985-11-15 | 1987-05-27 | Canon Inc | 光電変換装置 |
| JPH0812906B2 (ja) * | 1986-07-11 | 1996-02-07 | キヤノン株式会社 | 光電変換装置の製造方法 |
| JPH0843716A (ja) | 1994-07-28 | 1996-02-16 | Canon Inc | 光電変換素子の蓄積制御装置、焦点検出装置、及びカメラ |
| JP3774499B2 (ja) | 1996-01-24 | 2006-05-17 | キヤノン株式会社 | 光電変換装置 |
| JPH1026723A (ja) * | 1996-07-10 | 1998-01-27 | Canon Inc | 光学装置、焦点検出装置及びオートフォーカスカメラ |
| KR100879013B1 (ko) | 2007-05-22 | 2009-01-19 | (주)실리콘화일 | 매립형 컬렉터를 구비하는 포토트랜지스터 |
-
1983
- 1983-07-02 JP JP58120757A patent/JPS6012765A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2112000A1 (fr) | 2008-03-27 | 2009-10-28 | Mitsubishi HiTec Paper Flensburg GmbH | Matériel d'enregistrement sensible à la chaleur |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6012765A (ja) | 1985-01-23 |
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