JPH044756B2 - - Google Patents
Info
- Publication number
- JPH044756B2 JPH044756B2 JP27675486A JP27675486A JPH044756B2 JP H044756 B2 JPH044756 B2 JP H044756B2 JP 27675486 A JP27675486 A JP 27675486A JP 27675486 A JP27675486 A JP 27675486A JP H044756 B2 JPH044756 B2 JP H044756B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- forming
- gate
- semiconductor substrate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 230000006698 induction Effects 0.000 claims description 32
- 230000003068 static effect Effects 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27675486A JPS63131583A (ja) | 1986-11-21 | 1986-11-21 | 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 |
| DE3752273T DE3752273T2 (de) | 1986-11-19 | 1987-11-10 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
| EP95114168A EP0690513B1 (en) | 1986-11-19 | 1987-11-10 | Step-cut insulated gate static induction transistors and method of manufacturing the same |
| DE87310185T DE3789003T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung. |
| DE3752215T DE3752215T2 (de) | 1986-11-19 | 1987-11-18 | Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe |
| EP93101675A EP0547030B1 (en) | 1986-11-19 | 1987-11-18 | Step-cut insulated gate static induction transistors and method of manufacturing the same |
| EP87310185A EP0268472B1 (en) | 1986-11-19 | 1987-11-18 | Step-cut insulated gate static induction transistors and method of manufacturing the same |
| EP92101661A EP0481965B1 (en) | 1986-11-19 | 1987-11-18 | Method of manufacturing step-cut insulated gate static induction transistors |
| DE3752255T DE3752255T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
| US07/752,934 US5115287A (en) | 1986-11-19 | 1991-08-30 | Step-cut insulated gate static induction transistors and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27675486A JPS63131583A (ja) | 1986-11-21 | 1986-11-21 | 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63131583A JPS63131583A (ja) | 1988-06-03 |
| JPH044756B2 true JPH044756B2 (zh) | 1992-01-29 |
Family
ID=17573875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27675486A Granted JPS63131583A (ja) | 1986-11-19 | 1986-11-21 | 切り込み型絶縁ゲ−ト静電誘導トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63131583A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821716B2 (ja) * | 1991-09-24 | 1996-03-04 | 株式会社小電力高速通信研究所 | 切り込み型絶縁ゲート静電誘導トランジスタの製造方法 |
-
1986
- 1986-11-21 JP JP27675486A patent/JPS63131583A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63131583A (ja) | 1988-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3462301B2 (ja) | 半導体装置及びその製造方法 | |
| KR100265080B1 (ko) | 수직 2중-게이트 전계 효과 트랜지스터 및 그 제조 방법 | |
| KR100237279B1 (ko) | Misfet, 상보형misfet 및 그 제조방법 | |
| KR0163759B1 (ko) | 반도체장치 및 반도체기억장치 | |
| JPH06350090A (ja) | 半導体装置の製造方法 | |
| JPH1197693A (ja) | 半導体装置およびその製造方法 | |
| US7176071B2 (en) | Semiconductor device and fabrication method with etch stop film below active layer | |
| US6352872B1 (en) | SOI device with double gate and method for fabricating the same | |
| JPH05206451A (ja) | Ｍｏｓｆｅｔおよびその製造方法 | |
| JPH11354756A (ja) | 半導体装置及びその製造方法 | |
| JPH09186339A (ja) | 薄膜トランジスタ及びその製造方法 | |
| JPH05343686A (ja) | 半導体装置およびその製造方法 | |
| JP2519284B2 (ja) | 埋め込みゲ―ト型ｍｏｓｆｅｔの製造方法 | |
| JP2000012851A (ja) | 電界効果型トランジスタ及びその製造方法 | |
| EP0268472B1 (en) | Step-cut insulated gate static induction transistors and method of manufacturing the same | |
| JP3402905B2 (ja) | 半導体素子 | |
| JP2729422B2 (ja) | 半導体装置 | |
| JPH06334146A (ja) | 半導体装置 | |
| JPS63155768A (ja) | 半導体デバイスの製造方法 | |
| JPH03793B2 (zh) | ||
| JPH044756B2 (zh) | ||
| JPH0298939A (ja) | 半導体装置の製造方法 | |
| JP3632565B2 (ja) | 半導体装置の製造方法 | |
| JPS6020582A (ja) | Ｍｉｓトランジスタ及びその製造方法 | |
| JP4065797B2 (ja) | 半導体装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |