JPH0439789B2 - - Google Patents
Info
- Publication number
- JPH0439789B2 JPH0439789B2 JP59162551A JP16255184A JPH0439789B2 JP H0439789 B2 JPH0439789 B2 JP H0439789B2 JP 59162551 A JP59162551 A JP 59162551A JP 16255184 A JP16255184 A JP 16255184A JP H0439789 B2 JPH0439789 B2 JP H0439789B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- type
- buried
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16255184A JPS6142166A (ja) | 1984-08-01 | 1984-08-01 | 半導体注入集積論理回路装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16255184A JPS6142166A (ja) | 1984-08-01 | 1984-08-01 | 半導体注入集積論理回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6142166A JPS6142166A (ja) | 1986-02-28 |
JPH0439789B2 true JPH0439789B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-06-30 |
Family
ID=15756738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16255184A Granted JPS6142166A (ja) | 1984-08-01 | 1984-08-01 | 半導体注入集積論理回路装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6142166A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1984
- 1984-08-01 JP JP16255184A patent/JPS6142166A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6142166A (ja) | 1986-02-28 |