JPH0436167B2 - - Google Patents

Info

Publication number
JPH0436167B2
JPH0436167B2 JP1094185A JP1094185A JPH0436167B2 JP H0436167 B2 JPH0436167 B2 JP H0436167B2 JP 1094185 A JP1094185 A JP 1094185A JP 1094185 A JP1094185 A JP 1094185A JP H0436167 B2 JPH0436167 B2 JP H0436167B2
Authority
JP
Japan
Prior art keywords
chloroacrylate
fluoroalkyl
polymerization
monomers
substituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1094185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61170735A (ja
Inventor
Mutsuo Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP1094185A priority Critical patent/JPS61170735A/ja
Publication of JPS61170735A publication Critical patent/JPS61170735A/ja
Publication of JPH0436167B2 publication Critical patent/JPH0436167B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP1094185A 1985-01-25 1985-01-25 ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法 Granted JPS61170735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1094185A JPS61170735A (ja) 1985-01-25 1985-01-25 ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1094185A JPS61170735A (ja) 1985-01-25 1985-01-25 ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法

Publications (2)

Publication Number Publication Date
JPS61170735A JPS61170735A (ja) 1986-08-01
JPH0436167B2 true JPH0436167B2 (enrdf_load_html_response) 1992-06-15

Family

ID=11764233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1094185A Granted JPS61170735A (ja) 1985-01-25 1985-01-25 ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法

Country Status (1)

Country Link
JP (1) JPS61170735A (enrdf_load_html_response)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62223750A (ja) * 1986-03-26 1987-10-01 Toray Ind Inc 放射線感応ポジ型レジストおよび該レジスト組成物
JP4484690B2 (ja) * 2004-12-21 2010-06-16 ダイセル化学工業株式会社 フォトレジスト用樹脂の製造方法
US20190056664A1 (en) * 2016-01-29 2019-02-21 Zeon Corporation Polymer, positive resist composition, and method of forming resist pattern
JP6935669B2 (ja) * 2016-12-27 2021-09-15 日本ゼオン株式会社 レジストパターン形成方法
KR102494961B1 (ko) * 2016-12-27 2023-02-01 니폰 제온 가부시키가이샤 중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법
JP6958040B2 (ja) * 2017-07-06 2021-11-02 日本ゼオン株式会社 積層体
JP6958039B2 (ja) * 2017-07-06 2021-11-02 日本ゼオン株式会社 レジスト膜形成方法および積層体の製造方法
CN111065967B (zh) * 2017-09-29 2023-06-23 日本瑞翁株式会社 正型抗蚀剂组合物、抗蚀剂膜形成方法及层叠体的制造方法
JP7013900B2 (ja) * 2018-02-02 2022-02-01 日本ゼオン株式会社 ポジ型レジスト組成物、レジスト膜形成方法、及び積層体の製造方法
US11215925B2 (en) * 2018-02-05 2022-01-04 Zeon Corporation Method of forming resist pattern
WO2020066806A1 (ja) * 2018-09-25 2020-04-02 日本ゼオン株式会社 共重合体およびポジ型レジスト組成物
KR20230029619A (ko) * 2020-06-22 2023-03-03 니폰 제온 가부시키가이샤 공중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법
WO2023189586A1 (ja) * 2022-03-29 2023-10-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2024203557A1 (ja) * 2023-03-30 2024-10-03 日本ゼオン株式会社 共重合体、ポジ型レジスト組成物、およびレジストパターン形成方法

Also Published As

Publication number Publication date
JPS61170735A (ja) 1986-08-01

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