JPH0146863B2 - - Google Patents
Info
- Publication number
- JPH0146863B2 JPH0146863B2 JP826681A JP826681A JPH0146863B2 JP H0146863 B2 JPH0146863 B2 JP H0146863B2 JP 826681 A JP826681 A JP 826681A JP 826681 A JP826681 A JP 826681A JP H0146863 B2 JPH0146863 B2 JP H0146863B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- present
- methacrylate
- dry etching
- methacrylic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001312 dry etching Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 13
- 229920001577 copolymer Polymers 0.000 claims description 13
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 125000005397 methacrylic acid ester group Chemical group 0.000 claims 1
- 238000000034 method Methods 0.000 description 15
- 238000010894 electron beam technology Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000000862 absorption spectrum Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229920000182 polyphenyl methacrylate Polymers 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 150000008065 acid anhydrides Chemical class 0.000 description 5
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000003505 polymerization initiator Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004455 differential thermal analysis Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- DGZZQOZXBPFEIY-UHFFFAOYSA-N (2,4,6-trichlorophenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=C(Cl)C=C(Cl)C=C1Cl DGZZQOZXBPFEIY-UHFFFAOYSA-N 0.000 description 1
- MJJJBYGWDXJRPP-UHFFFAOYSA-N (4-fluorophenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=C(F)C=C1 MJJJBYGWDXJRPP-UHFFFAOYSA-N 0.000 description 1
- CWBLKOLBEWWCOP-UHFFFAOYSA-N 2-methylprop-2-enoic acid;phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(O)=O.CC(=C)C(=O)OC1=CC=CC=C1 CWBLKOLBEWWCOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AVXYPAZKABBYHD-UHFFFAOYSA-N benzhydryl 2-methylprop-2-enoate Chemical compound C=1C=CC=CC=1C(OC(=O)C(=C)C)C1=CC=CC=C1 AVXYPAZKABBYHD-UHFFFAOYSA-N 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010556 emulsion polymerization method Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005593 poly(benzyl methacrylate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/10—Homopolymers or copolymers of methacrylic acid esters
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP826681A JPS57122430A (en) | 1981-01-22 | 1981-01-22 | Positive type resist material with dry etching resistance |
| US06/339,414 US4430419A (en) | 1981-01-22 | 1982-01-15 | Positive resist and method for manufacturing a pattern thereof |
| GB8201246A GB2093048B (en) | 1981-01-22 | 1982-01-18 | Positive resist copolymer and method for manufacturing a pattern therewith |
| CA000394565A CA1211600A (en) | 1981-01-22 | 1982-01-20 | Positive resist and method for manufacturing a pattern thereof |
| NLAANVRAGE8200211,A NL186119C (nl) | 1981-01-22 | 1982-01-21 | Werkwijze voor het vormen van een patroon voor een positieve resist. |
| FR8200936A FR2498198B1 (fr) | 1981-01-22 | 1982-01-21 | Revetement resistant positif et procede pour la formation d'un dessin de ce revetement sur un substrat |
| DE19823201815 DE3201815A1 (de) | 1981-01-22 | 1982-01-21 | Positives resistmaterial und verfahren zur herstellung eines musters daraus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP826681A JPS57122430A (en) | 1981-01-22 | 1981-01-22 | Positive type resist material with dry etching resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57122430A JPS57122430A (en) | 1982-07-30 |
| JPH0146863B2 true JPH0146863B2 (enrdf_load_html_response) | 1989-10-11 |
Family
ID=11688348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP826681A Granted JPS57122430A (en) | 1981-01-22 | 1981-01-22 | Positive type resist material with dry etching resistance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57122430A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
| JPH0816783B2 (ja) * | 1989-09-11 | 1996-02-21 | 工業技術院物質工学工業技術研究所長 | 可視光記録材料 |
-
1981
- 1981-01-22 JP JP826681A patent/JPS57122430A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57122430A (en) | 1982-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4011351A (en) | Preparation of resist image with methacrylate polymers | |
| US4061829A (en) | Negative resist for X-ray and electron beam lithography and method of using same | |
| US4087569A (en) | Prebaking treatment for resist mask composition and mask making process using same | |
| US6171757B1 (en) | Organometallic polymers and use thereof | |
| JPS6048022B2 (ja) | 電子感応レジスト | |
| US4096290A (en) | Resist mask formation process with haloalkyl methacrylate copolymers | |
| US3770433A (en) | High sensitivity negative electron resist | |
| US4430419A (en) | Positive resist and method for manufacturing a pattern thereof | |
| Wilkins et al. | Preliminary evaluation of copolymers of Methyl Methacrylate and acyloximino methacrylate as deep UV resists | |
| JPH0436167B2 (enrdf_load_html_response) | ||
| JPH0146863B2 (enrdf_load_html_response) | ||
| EP0119017B1 (en) | Electron-beam and x-ray sensitive polymers and resists | |
| JPS62235943A (ja) | リソグラフイ−法を利用した電子デバイスの製造方法 | |
| US4243742A (en) | Radiation-sensitive positively acting materials | |
| US4623609A (en) | Process for forming patterns using ionizing radiation sensitive resist | |
| US4795692A (en) | Negative-working polymers useful as X-ray or E-beam resists | |
| JPH087443B2 (ja) | 高解像度ポジ型放射線感応性レジスト | |
| Kitakohji et al. | Polymers constituted by methyl methacrylate, methacrylic acid, and methacryloyl chloride as a positive electron resist | |
| JPH087441B2 (ja) | ポジ型高感度放射線感応性レジスト | |
| JPS5817105A (ja) | 電離放射線感応性材料 | |
| JPS5886726A (ja) | パタ−ン形成法 | |
| JPS62223750A (ja) | 放射線感応ポジ型レジストおよび該レジスト組成物 | |
| JP2871010B2 (ja) | ポジ型電子線レジスト液 | |
| DE4040117C2 (de) | Stahlenempfindliches Material für die Elektronenstrahl- und Röntgenstrahllithographie und Verfahren zur Trockenentwicklung des Materials | |
| JPS6134660B2 (enrdf_load_html_response) |