JPH04354143A - 厚膜多層回路基板 - Google Patents

厚膜多層回路基板

Info

Publication number
JPH04354143A
JPH04354143A JP3128975A JP12897591A JPH04354143A JP H04354143 A JPH04354143 A JP H04354143A JP 3128975 A JP3128975 A JP 3128975A JP 12897591 A JP12897591 A JP 12897591A JP H04354143 A JPH04354143 A JP H04354143A
Authority
JP
Japan
Prior art keywords
thick film
circuit board
electrodes
multilayer circuit
conductor paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3128975A
Other languages
English (en)
Inventor
Osamu Asai
修 浅井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3128975A priority Critical patent/JPH04354143A/ja
Publication of JPH04354143A publication Critical patent/JPH04354143A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • H01L2224/49433Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、半導体チップをワイヤ
ボンディング方式にて実装する場合に用いることができ
る電子機器実装用の厚膜多層回路基板に関する。
【0002】
【従来の技術】図3は半導体チップを従来の厚膜回路基
板に実装したときの構造を示す平面図であり、図におい
て1はアルミナ基板、3はアルミナ基板1の上に形成さ
れている電極、4はアルミナ基板1の上に形成されてい
る半導体チップ、5は電極3と半導体チップ4のパット
6を接続されているワイヤ線である。
【0003】図に示すように、半導体チップ4はアルミ
ナ基板1上に厚膜導体ペーストより放射状に形成された
電極3の一部を半導体チップ4のパット6とワイヤ線5
にて接続されているのが一般的であった。
【0004】
【発明が解決しようとする課題】しかしながら上記の構
成では、厚膜導体ペーストより放射状に形成された電極
3と半導体チップ4をワイヤ線5にて接続された場合、
半導体チップ4のパット6の数の増大に伴って電極3の
数も増し、非常に面積が大きくなり基板の小型化に寄与
しないという課題があり、一方、半導体チップ4と電極
3との間のワイヤ線5が長くなり、コストが高価になる
という課題があった。
【0005】本発明は、このような従来の課題を解決す
るものであり、厚膜導体ペーストより形成される電極を
千鳥状に2列以上配列でワイヤボンディングする場合に
用いることのできる非常に面積が小型化で優れた厚膜多
層回路基板を提供することを目的とするものである。
【0006】
【課題を解決するための手段】本発明は上記目的を達成
するために、アルミナ基板の表面に厚膜導体ペーストを
用いて形成された内部電極上に絶縁ペーストを用いて絶
縁層を形成され、且つ前記絶縁層上に厚膜導体ペースト
を用いて形成された外部電極からなるものである。
【0007】
【作用】したがって本発明によれば、アルミナ基板上に
厚膜導体ペーストを用いて形成された内部電極上に絶縁
ペーストを用いて絶縁層を形成した後に、厚膜導体ペー
ストを用いて絶縁物上に外部電極を形成するものであり
、このようにすれば、従来と比較して非常に基板面積が
小型化になる。
【0008】さらに本発明によれば、半導体チップと電
極の距離が短いためワイヤ線が少量しか使用しないため
に製品のコストパフォーマンスに有利であり、またワイ
ヤ線の上下または左右蛇行を少なくでき、電気的に接触
するという不良を低減するものである。
【0009】
【実施例】以下、本発明の一実施例について、図1およ
び図2を参照しながら説明する。
【0010】図1は本発明の一実施例の厚膜多層回路基
板に半導体チップを実装したときの平面図であり、図2
は図1に示す実施例の部分拡大断面図である。
【0011】図に示すように、アルミナ基板1上に厚膜
導体ペーストを用いて形成された内部電極2上に絶縁ペ
ーストを用いて絶縁層7を形成した後、絶縁層7上に厚
膜導体ペーストを用いて外部電極3を形成する。
【0012】このようにすれば、電極2,3の一部を半
導体チップ4のパット6をワイヤボンディングでワイヤ
線5を接続したときに、半導体チップ4と電極2,3の
距離が短いためワイヤ線5の上下または左右蛇行を少な
くでき、電気的に接触しないという信頼性向上に大きな
効果を得ることができ、またワイヤ線5使用量が少量で
済むことができる。また電極2,3を2列以上配列で用
いることのできるため基板の小型化ができ、製品のコス
トを低減する上においても有利である。
【0013】
【発明の効果】本発明は上記実施例よりあきらかなよう
に、電極を2列以上配列で用いる構成とすることにより
、ワイヤ線の上下または左右蛇行を少なくでき、また電
極を2列以上配列で用いることのできるため基板の小型
化ができるため、信頼性に優れ、かつ安価な厚膜多層回
路基板を得ることができる。
【図面の簡単な説明】
【図1】本発明の一実施例における厚膜多層基板に半導
体チップを実装した平面図
【図2】同実施例における部分拡大断面図
【図3】従来
の厚膜回路基板に半導体チップを実装した平面図
【符号の説明】
1  アルミナ基板 2  内部電極 3  外部電極 4  半導体チップ 5  ワイヤ線 6  パット 7  絶縁層

Claims (1)

    【特許請求の範囲】
  1. 【請求項1】半導体チップを実装する場合に用いる厚膜
    多層回路基板であって、半導体チップを接続するワイヤ
    ボンディング用電極を千鳥状に2列以上配列したことを
    特徴とする厚膜多層回路基板。
JP3128975A 1991-05-31 1991-05-31 厚膜多層回路基板 Pending JPH04354143A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3128975A JPH04354143A (ja) 1991-05-31 1991-05-31 厚膜多層回路基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3128975A JPH04354143A (ja) 1991-05-31 1991-05-31 厚膜多層回路基板

Publications (1)

Publication Number Publication Date
JPH04354143A true JPH04354143A (ja) 1992-12-08

Family

ID=14998036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3128975A Pending JPH04354143A (ja) 1991-05-31 1991-05-31 厚膜多層回路基板

Country Status (1)

Country Link
JP (1) JPH04354143A (ja)

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