JPH0431193B2 - - Google Patents

Info

Publication number
JPH0431193B2
JPH0431193B2 JP60043051A JP4305185A JPH0431193B2 JP H0431193 B2 JPH0431193 B2 JP H0431193B2 JP 60043051 A JP60043051 A JP 60043051A JP 4305185 A JP4305185 A JP 4305185A JP H0431193 B2 JPH0431193 B2 JP H0431193B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
insulating film
drain
substrate
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60043051A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61202467A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60043051A priority Critical patent/JPS61202467A/ja
Publication of JPS61202467A publication Critical patent/JPS61202467A/ja
Publication of JPH0431193B2 publication Critical patent/JPH0431193B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
JP60043051A 1985-03-05 1985-03-05 半導体装置 Granted JPS61202467A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60043051A JPS61202467A (ja) 1985-03-05 1985-03-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60043051A JPS61202467A (ja) 1985-03-05 1985-03-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS61202467A JPS61202467A (ja) 1986-09-08
JPH0431193B2 true JPH0431193B2 (cs) 1992-05-25

Family

ID=12653078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60043051A Granted JPS61202467A (ja) 1985-03-05 1985-03-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS61202467A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2995838B2 (ja) * 1990-01-11 1999-12-27 セイコーエプソン株式会社 Ｍｉｓ型半導体装置及びその製造方法
DE69109366T2 (de) * 1990-05-31 1995-10-19 Canon Kk Verfahren zur Herstellung einer Halbleiteranordnung mit Gatestruktur.
JP2530641Y2 (ja) * 1990-11-05 1997-03-26 ミネベア株式会社 ファンモータのリード線固定装置

Also Published As

Publication number Publication date
JPS61202467A (ja) 1986-09-08

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