JPH043061B2 - - Google Patents

Info

Publication number
JPH043061B2
JPH043061B2 JP56199187A JP19918781A JPH043061B2 JP H043061 B2 JPH043061 B2 JP H043061B2 JP 56199187 A JP56199187 A JP 56199187A JP 19918781 A JP19918781 A JP 19918781A JP H043061 B2 JPH043061 B2 JP H043061B2
Authority
JP
Japan
Prior art keywords
wafer
disk
ion beam
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56199187A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58100350A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56199187A priority Critical patent/JPS58100350A/ja
Publication of JPS58100350A publication Critical patent/JPS58100350A/ja
Publication of JPH043061B2 publication Critical patent/JPH043061B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP56199187A 1981-12-08 1981-12-08 イオン注入装置 Granted JPS58100350A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56199187A JPS58100350A (ja) 1981-12-08 1981-12-08 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56199187A JPS58100350A (ja) 1981-12-08 1981-12-08 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS58100350A JPS58100350A (ja) 1983-06-15
JPH043061B2 true JPH043061B2 (cg-RX-API-DMAC7.html) 1992-01-21

Family

ID=16403581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199187A Granted JPS58100350A (ja) 1981-12-08 1981-12-08 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS58100350A (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245176A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS60246628A (ja) * 1984-05-21 1985-12-06 Mitsubishi Electric Corp 半導体ウエ−ハのイオン打込み方法
JPS61269843A (ja) * 1985-05-23 1986-11-29 Matsushita Electronics Corp 半導体製造装置
JP2537180B2 (ja) * 1985-09-30 1996-09-25 株式会社東芝 半導体装置の製造方法
JPS62154622A (ja) * 1985-12-26 1987-07-09 Matsushita Electronics Corp 半導体装置の製造方法
JP2582552B2 (ja) * 1986-05-29 1997-02-19 三菱電機株式会社 イオン注入装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927092B2 (ja) * 1977-03-17 1984-07-03 三洋電機株式会社 イオン注入法
JPS5493957A (en) * 1978-01-06 1979-07-25 Mitsubishi Electric Corp Production of semiconductor device
JPS6113006Y2 (cg-RX-API-DMAC7.html) * 1978-07-31 1986-04-22

Also Published As

Publication number Publication date
JPS58100350A (ja) 1983-06-15

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