JPS58100350A - イオン注入装置 - Google Patents

イオン注入装置

Info

Publication number
JPS58100350A
JPS58100350A JP56199187A JP19918781A JPS58100350A JP S58100350 A JPS58100350 A JP S58100350A JP 56199187 A JP56199187 A JP 56199187A JP 19918781 A JP19918781 A JP 19918781A JP S58100350 A JPS58100350 A JP S58100350A
Authority
JP
Japan
Prior art keywords
ion beam
implantation
layer
ion
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56199187A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043061B2 (cg-RX-API-DMAC7.html
Inventor
Tatsuro Okamoto
岡本　龍郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56199187A priority Critical patent/JPS58100350A/ja
Publication of JPS58100350A publication Critical patent/JPS58100350A/ja
Publication of JPH043061B2 publication Critical patent/JPH043061B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP56199187A 1981-12-08 1981-12-08 イオン注入装置 Granted JPS58100350A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56199187A JPS58100350A (ja) 1981-12-08 1981-12-08 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56199187A JPS58100350A (ja) 1981-12-08 1981-12-08 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS58100350A true JPS58100350A (ja) 1983-06-15
JPH043061B2 JPH043061B2 (cg-RX-API-DMAC7.html) 1992-01-21

Family

ID=16403581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199187A Granted JPS58100350A (ja) 1981-12-08 1981-12-08 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS58100350A (cg-RX-API-DMAC7.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245176A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS60246628A (ja) * 1984-05-21 1985-12-06 Mitsubishi Electric Corp 半導体ウエ−ハのイオン打込み方法
JPS61269843A (ja) * 1985-05-23 1986-11-29 Matsushita Electronics Corp 半導体製造装置
JPS6276617A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体装置の製造方法
JPS62154622A (ja) * 1985-12-26 1987-07-09 Matsushita Electronics Corp 半導体装置の製造方法
JPS62281322A (ja) * 1986-05-29 1987-12-07 Mitsubishi Electric Corp イオン注入装置用基板支持構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115172A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Ion implanting method
JPS5493957A (en) * 1978-01-06 1979-07-25 Mitsubishi Electric Corp Production of semiconductor device
JPS5521779U (cg-RX-API-DMAC7.html) * 1978-07-31 1980-02-12

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115172A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Ion implanting method
JPS5493957A (en) * 1978-01-06 1979-07-25 Mitsubishi Electric Corp Production of semiconductor device
JPS5521779U (cg-RX-API-DMAC7.html) * 1978-07-31 1980-02-12

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245176A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS60246628A (ja) * 1984-05-21 1985-12-06 Mitsubishi Electric Corp 半導体ウエ−ハのイオン打込み方法
JPS61269843A (ja) * 1985-05-23 1986-11-29 Matsushita Electronics Corp 半導体製造装置
JPS6276617A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体装置の製造方法
JPS62154622A (ja) * 1985-12-26 1987-07-09 Matsushita Electronics Corp 半導体装置の製造方法
JPS62281322A (ja) * 1986-05-29 1987-12-07 Mitsubishi Electric Corp イオン注入装置用基板支持構造

Also Published As

Publication number Publication date
JPH043061B2 (cg-RX-API-DMAC7.html) 1992-01-21

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