JPH0430586A - Thermoelectric device - Google Patents

Abstract

PURPOSE:To improve thermoelectric performance by forming a film substrate having conductors disposed in protrusion and recess in a corrugated state, and mounting heat exchanging means in contact with the protrusion and the recess. CONSTITUTION:An insulating film substrate 14 is formed in a corrugated state in which ever other conductors 16 are repetitively in protrusions and recesses in such a manner that all the protrusions are brought into thermal contact with one pressure vessel 12 and all the recesses are brought into contact with other pressure vessels 12. A current flows to the semiconductors 15, 17 and a conductor 16 along the substrate 14. A boundary between the semiconductors 15, 17 and the conductor 16 generates heat or absorbs heat by means of Peltier effect. In this case, since the semiconductors 15, 17 are alternately aligned, the conductor 16 alternately generates or absorbs heat, and one vessel 12 in contact with every other semiconductors 16 absorbs heat, and the other vessel 12 generates heat. Accordingly, heat is absorbed from fluid above the board 14, and heat is dissipated to fluid flowing thereunder.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thermoelectric device useful for an air conditioner that electrically cools or heats air using the Peltier effect or a power generator that generates electricity using a temperature difference due to the Seebeck effect. .

Conventional Technology Conventional A thermoelectric element that converts heat into electricity or electricity into heat has an N-type semiconductor 3 and a P-type semiconductor 4 sandwiched between a metal plate 1 and a metal plate 2, as shown in the conventional example shown in FIG. The structure is such that LN type semiconductors 3 and P type semiconductors 4 are alternately arranged in series. Therefore, when a temperature difference is applied between metal plates 1 and 2, a potential difference is generated between terminals 5 and 6 due to the Seebeck effect, producing a power generation effect.Also, when a potential is applied between terminals 5 and 6, a potential difference is generated between terminals 5 and 6 due to the Peltier effect. One side of the plate is cooled and the other side is heated.

Problems to be Solved by the Invention However, such conventional thermoelectric devices have a structure that uses semiconductor materials and metal plates in bulk.6 (1) Large amounts of rare materials such as Te and Bi are required. As a result, the weight and volume of the thermoelectric element increases, and the material cost increases (2) Brazing, etc. is required to reduce the electrical resistance and thermal resistance of the contact part when joining the semiconductor and metal plate. (3) Semiconductor has a large cross-sectional area This invention had problems such as a large heat flow from the heating section to the cooling section, resulting in reduced efficiency (above) Based on the above problems, the material cost, weight, and The present invention provides a thermoelectric device having a structure that significantly reduces volume and improves thermoelectric performance by suppressing contact resistance and heat flow within the semiconductor.

Means for Solving the Problems The thermoelectric device of the present invention includes an N-type semiconductor conductor 1 and a P-type semiconductor conductor 2 in the plane direction on an insulating film substrate.
A thermoelectric circuit is formed so that the ends of each semiconductor/conductor are electrically connected, and the film substrate is configured in a corrugated shape so that the conductor 1 is located in a convex part and the conductor 2 is located in a concave part, By installing heat exchange means in contact with the recess on both sides, the above-mentioned problems can be solved.The thermoelectric element in the form of a dam-action film can be constructed thinly, making it a compact and lightweight device. Moreover, the amount of material used can be significantly reduced (compared to when used in bulk), and the small cross-sectional area of semiconductors also makes it possible to
It is possible to reduce heat conduction from the heating section to the cooling section.
Since there is almost no electrical contact resistance between the semiconductor and the conductor, the temperature difference between the thermoelectric element and the air can be reduced, and performance can be improved.

EXAMPLES Below, examples according to the present invention will be described with reference to the drawings. <Example 1> Fig. 1 shows the configuration of a thermoelectric device according to an example of the present invention. Element 1
A pressure vessel 12 is installed on both sides of the pressure vessel 1, and a flow path 13 is formed in the pressure vessel 12. When using it as a cooling device? A heat pump cycle is formed in which a current is passed through the thermoelectric element 11 to absorb heat from one of the two fluids flowing through the flow path 13 and discard the heat to the other fluid. When used as a power generation device, electromotive force is obtained from two fluids with different temperatures flowing through the flow path 13. Details of the thermoelectric element 11 are shown in FIG. On one side of the insulating film substrate 14, an N-type semiconductor 15,
Even if the conductor 16, the P-type semiconductor 17, and the conductor 16 are formed in this order, the N-type semiconductor I2, the conductor 13, and the P-type semiconductor 1
411 Each end is in contact with each other, and the structure is such that the electrical resistance and thermal resistance of the contact portions do not increase. Although copper or aluminum, which has low electrical resistance, is used as the material for the conductor 13, the insulating film substrate 14 is processed into a corrugated shape with repeated irregularities on every other conductor 16, and all convex parts ζ In thermal contact with the other pressure vessel 12, the semiconductor 1
5, 17 and the conductor 16. This results in
At the interface between the semiconductors 15 and 17 and the conductor 16, heat generation or absorption may occur due to the Peltier effect. One pressure vessel 12 serves as a heat absorption part and contacts every other conductor 16 as described above.
is endothermic (or exothermic), and the other pressure vessel 121 is exothermic (or endothermic). Therefore, heat is absorbed from the fluid above the insulating film substrate 14 (or heat is radiated to the fluid), and heat is radiated to the fluid flowing below (or heat is absorbed from the fluid).

When used as a power generation device (above), a temperature difference is created between the two fluids flowing through each pressure vessel 12. As a result, the conductor 16 becomes alternately high and low temperature, and an electromotive force can be generated due to the Seebeck effect. <Embodiment 2> FIG. 2 shows another embodiment of the present invention, and shows the configuration of a thermoelectric device.The configuration of the thermoelectric element 11 is the same as that shown in FIG. Although the corrugated fins 18 are installed on the upper part of the thermoelectric element 11 and the radiant heat transfer surface 19 is installed on the lower part, the corrugated fins 18 have the same number as explained in Example 1. The radiant heat transfer surface 19 is in thermal contact with the conductor 16 located in the concave portion, and when used as a cooling device, the corrugated fin 18 absorbs heat (by passing a current through the thermoelectric element 11, The other radiant heat transfer surface 19 generates heat (or absorbs heat). Therefore, radiant cooling and heating are possible.

When used as a power generation device, the radiant heat transfer surface 19 is heated by solar heat, etc. By flowing cooling air through the corrugated fins 18, the conductor 16 becomes high and low temperature alternately, and the Seebeck effect increases the electromotive force. However, in the present invention, the heat exchange means installed on both sides of the thermoelectric element 11 can be freely selected, and a configuration suitable for the characteristics of the heat exchange fluid, including radiation, can be made. As described above, in the present invention, it is possible to construct a thermoelectric element thinner than 1, and it is possible to make a compact and light device. The fact that the flow path portions can be fabricated independently and then integrated together provides a thermoelectric device that is easy to fabricate and is inexpensive.As can be seen from the effects of the invention, the thermoelectric device according to the present invention can be made into a compact and lightweight device. . Also, the amount of material used Ct
This is much less than when used in bulk. Also, due to the small cross-sectional area of the semiconductor, it is possible to reduce heat conduction from the heating section to the cooling section. Shichikaei The contact electrical resistance between the semiconductor and the conductor is almost negligible.The structure of the fin and flow path is subject to restrictions due to the structure of the semiconductor, but can be freely designed according to the heat transfer conditions on the fluid side. In addition, since it can be fabricated separately from the semiconductor part and then integrated, it can be made at low cost in terms of structure.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a thermoelectric device according to one embodiment of the present invention. FIG. 2 is a cross-sectional view of a thermoelectric element constituting the thermoelectric device. FIG. 3 is a cross-sectional view of a thermoelectric device according to another embodiment of the present invention. 4.15.1 is a perspective view showing the configuration of a conventional thermoelectric device. , , , Semiconductor 14. ,, Insulating film substrate 18, , Conductor 12. , , style 1
1@,, 18. ,, corrugated fin. Name of agent: Patent attorney Shigetaka Awano and 1 other polycyclic diagrams

Claims (5)

[Claims] (1) N-type semiconductor,
A thermoelectric circuit is formed in the order of the first conductor, the P-type semiconductor, and the second conductor so that the ends of each semiconductor/conductor are electrically connected, and the conductor 1 is connected to the convex part of the conductor 2. 1. A thermoelectric device, wherein a film substrate is configured in a corrugated shape so that a film substrate is located in a concave portion, and heat exchange means that contacts the convex portion and the concave portion are installed on both sides. (2) The thermoelectric device according to claim 1, wherein one or both of the heat exchange means is a pressure vessel through which a fluid can pass. (3) The thermoelectric device according to claim 1, wherein one or both of the heat exchange means are corrugated fins. (4) The thermoelectric device according to claim 1, wherein one or both of the heat exchange means is a radiant surface. (5) The thermoelectric device according to claim 3, wherein the corrugated fins are provided with slits or louvers.