JPH03137462A - Thermo-electrical device - Google Patents

Abstract

PURPOSE:To provide a thermo-electrical element which is quite light in weight, compact in size, economical in cost and has a high performance by a method wherein a material cost, a weight and a volume of the thermo-electrical element are substantially reduced and a thermal flow in a contact resistor and semi-conductor is restricted. CONSTITUTION:In the event that a thermo-electrical element is used as a cooling device, an electrical current is passed in semi-conductors 12, 14 and an electrical conductor 13 in parallel with an insulating film substrate 11, either a heat generating reaction r a heat absorbing may occur at an interface between the semi-conductors 12 and 14 and the conductor 13 due to a Peltier effect. N-type semi-conductors 12 and P-type semi-conductors 14 are alternatively arranged, the electrical conductor 13 becomes alternatively a heating part or a heat absorbing part. Corrugated fins 15 to which the conductors 13 are alternately conducted become a heat absorbing (or a heat generating) part. In turn, a pressure container 16 becomes a heat generating (or a heat absorbing) part. In the event that this device is used as a power generating device, a temperature difference is produced between air contacting with the corrugated fins 15 and fluid flowing in the flow passage, thereby the conductors 13 alternately show a high temperature and a low temperature and then an electromotive force is generated under a Seebeck effect.

Description

[Detailed Description of the Invention] Industrial Application Field The present invention relates to a thermoelectric device useful for air conditioners that electrically cool or heat air using the Peltier effect, or power generation devices that generate electricity using temperature differences due to the Seebeck effect. Conventional technology when at least one of the fluids to be heat exchanged is a liquid or a fluid with a phase change Conventional technology A thermoelectric element 1 that converts heat into electricity or electricity into heat is shown in Figure 3. The conventional example shown in i has a configuration in which an N-type semiconductor 3 and a P-type semiconductor 4 are sandwiched between a metal plate 1 and a metal plate 2;
are arranged alternately in series.

Therefore, when a temperature difference is applied to metal plates 1 and 2, a potential difference is created between terminals 5 and 6 due to the Seebeck effect. One side of the metal plate is cooled
The other is heated.

Problems to be Solved by the Invention However, in conventional thermoelectric devices such as this, (1) rare materials such as Te and Bi are used in large quantities. This increases the weight and volume of the thermoelectric element, increasing material costs.

(2) When joining a semiconductor and a metal plate, brazing or the like is required to reduce the electrical resistance and thermal resistance of the contact area.

(3) The cross-sectional area of the semiconductor is large. There are problems such as a large heat flow from the heating part to the cooling part and a decrease in efficiency. The object of the present invention is to provide a thermoelectric device having a structure that improves thermoelectric performance by reducing contact resistance and heat flow within a semiconductor.

Means for Solving the Problems Therefore, a thermoelectric device according to the present invention (a thermoelectric circuit made of a semiconductor and a conductor is formed on an insulating film substrate).
A pressure vessel through which a fluid can pass is installed on the opposite side of the fin to one side of the substrate, the fin being in thermal contact with the heat generating part (or the heat absorbing part) of the thermoelectric circuit, and the pressure vessel is connected to the heat absorbing part (or the heat absorbing part) of the thermoelectric circuit. (heat-generating parts)
Pressure vessels through which fluid can pass are installed on both sides of the substrate, one pressure vessel is in thermal contact with the heat absorption part (or heat generation part) of the thermoelectric circuit, and the other pressure vessel is in thermal contact with the heat absorption part (or heat generation part) of the thermoelectric circuit. (1) A thermoelectric element in the form of a film. ζDai It is possible to have a thin structure, making it a compact and lightweight device, and the amount of material used can be significantly reduced compared to when using it in bulk. (3) The semiconductor and the conductor are deposited almost simultaneously in a vacuum tower, which reduces the heat conduction from the heating section to the cooling section.

Example (Example 1) An example according to the present invention will be explained below with reference to the drawings.
The figure shows an embodiment according to the present invention, and shows the configuration of a thermoelectric device.
A conductor 13, a P-type semiconductor 14, and a conductor 13 are deposited in this order. The corrugated fins 15 are located on one side of the film substrate 11 and are placed in contact with every other conductor 13. - Even if the pressure vessel 16 is located on the opposite side of the corrugated fin 15 with respect to the insulating film substrate 11, even if the flow path 17 for the fluid to be heat exchanged is formed inside the pressure vessel 16, the pressure vessel 16 ( The corrugated fins 15 are installed so as to contact every other conductor 13 that is different from the conductor 13 in contact with the corrugated fin 15 .

Even though the ends of the N-type semiconductor 12, the conductor 13, and the P-type semiconductor 141 overlap each other, and the electrical resistance and thermal resistance of the contact portions do not increase, the material of the conductor 13 (upper Copper or aluminum, which has low electrical resistance, is used.

When used as a cooling device: A current is passed through the semiconductors 12 and 14 and the conductor 13 in parallel to the insulating film substrate 11. As a result, the semiconductor 12.14 and the conductor 13
At this time, the N-type semiconductor 12 and the P-type semiconductor 14 are arranged alternately. The corrugated fins l 5 Li in contact with every other body 13 absorb heat (or generate heat). On the other hand, the pressure vessel 16 generates heat (or absorbs heat). Therefore, it absorbs heat from the air above the insulating film substrate 11 (or radiates heat to the air).
, heat is released to the fluid flowing through the flow path 17 (or heat is absorbed from the fluid).

When used as a power generation device, a temperature difference is created between the air in contact with the EL corrugated fins 15 and the fluid flowing through the flow path. As a result, the conductor 13 becomes high and low temperature alternately, and an electromotive force can be generated due to the Seebeck effect.

In this embodiment, the surface of the corrugated fin 15 is flat and strong, and it can be said that the shape allows easy machining of slit fins and louver fins that improve heat transfer performance with air.

As described above, in the present invention, it is possible to form a thin film on the surface of the film, making it possible to create a compact and lightweight device. This provides a thermoelectric device that is easy to manufacture and inexpensive, as it can be integrated after it has been manufactured.

(Embodiment 2) FIG. 2 is an embodiment of the second invention, and shows the configuration of a thermoelectric device.

The structure of the semiconductor and conductor on the insulating film substrate 11 (above) is the same as the structure shown in FIG. Even if one flow path 17 for the fluid to be heat exchanged is formed in the pressure vessel 16, every other conductor 13 is placed in the pressure vessel 16 so that each conductor 13 is in thermal contact with a different conductor 13. When used as a cooling device even when installed in , one pressure vessel 16 becomes endothermic (or exothermic), and the other pressure vessel 16 becomes exothermic (or endothermic). Therefore, the insulating film substrate 11
Absorbs heat from the fluid flowing through the upper channel 17 (or radiates heat to the fluid), and radiates heat to the fluid flowing through the lower channel 17 (or absorbs heat from the fluid). When used as a fluid, a temperature difference is created between the two fluids. As a result, the conductor 13 becomes hot and cold alternately,
An electromotive force can be generated by the Seebeck effect.

As described above, in the present invention, since the film is formed on the surface of the k film, it is possible to construct the film thinly, and the device can be made compact and light.

In addition, the thermoelectric element part and the flow path part can be fabricated independently and then integrated, and a thermoelectric device that is easy to manufacture and inexpensive can be provided. (1) Film-like thermoelectric element (1) It is possible to construct a thin film-like thermoelectric element, and it is possible to create a compact and light device.
Also, the amount of material used can be much smaller than when used in bulk (2) Is it because the cross-sectional area of the semiconductor is small or is there a temporary heating section?

(3) The semiconductor and the conductor are formed almost simultaneously in a vacuum field, so the contact electrical resistance between the semiconductor and the conductor is almost negligible (~ (4) Although it is easy to exchange heat with the fluid to be heat exchanged, (5) Structure C of the fin part is not limited by the structure of the semiconductor, and it is possible to conduct heat on the air side. It can be freely designed according to thermal conditions, and it can be fabricated separately from the semiconductor part and then integrated, so it can be constructed at low cost.In other words, by implementing the present invention, it can be extremely lightweight, It is compact and economical, and it is also possible to create a thermoelectric device with high performance.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a thermoelectric device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a thermoelectric device according to a second embodiment of the present invention. FIG. 3 is a block diagram of a conventional thermoelectric device.

Claims (5)

[Claims] (1) A thermoelectric circuit made of a semiconductor and a conductor is formed on an insulating film substrate, and a fin that is in thermal contact with the heat generating part (or heat absorbing part) of the thermoelectric circuit is provided on one side of the substrate.
A pressure vessel through which fluid can pass is installed on the opposite side of the fin,
The pressure vessel is a heat absorption part (or heat generation part) of the thermoelectric circuit.
A thermoelectric device that is in thermal contact with. (2) A thermoelectric circuit made of a semiconductor and a conductor is formed on an insulating film substrate, pressure vessels through which fluid can pass are installed on both sides of the substrate, and one pressure vessel is the heat absorbing part of the thermoelectric circuit ( or a heat generating part), and the other pressure vessel is in thermal contact with a heat absorbing part (or a heat generating part) of the thermoelectric circuit. (3) N-type (or P-type) semiconductor, conductor 1, P-type (or N-type) semiconductor, and conductor 2, and the ends of each semiconductor and conductor are electrically connected in this order to form a thermoelectric circuit. 3. The thermoelectric device according to claim 1 or 2, wherein the thermoelectric device comprises: (4) The thermoelectric device according to claim 1, wherein the fins are integrated into a corrugated shape. (5) The thermoelectric device according to claim 1, wherein the fins are provided with slits or louvers.