JP2011082272A - Thermoelectric cooling device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve cooling efficiency by a thermoelectric cooling element in a cooling device having the thermoelectric cooling element for cooling a heating element. <P>SOLUTION: A plurality of thermoelectric cooling elements 10 and 11 are arranged in a two-dimensional direction and a cooling element unit 4 is formed. The plurality of the cooling element units 4 are stacked in a plurality of layers. Heat transfer members 7 and 8 transmitting and receiving heat to/from the cooling element units 4 are laid between the cooling element units 4 of the respective layers. A heat absorbing part 4a in one cooing element unit 4 and a heat absorbing part 4a in the other cooling element unit 4 which are positioned across the heat transfer member 7 are brought into contact with the same heat transfer member 7 so that they can transmit heat. A heating part 4b in the one cooling element unit 4 and a heating part 4b in the other cooling element unit 4 which are positioned across the other heat transfer member 8 are brought into contact with the heat transfer member 8 so that they can transmit heat. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a cooling device for cooling a heating element, and more particularly to a thermoelectric cooling device having a thermoelectric cooling element.

  In recent years, high-performance semiconductor chips such as a central processing unit (CPU) and a microprocessor (MPU) are mounted on a substrate on which an electronic circuit for performing electronic control is provided. Semiconductor chips such as CPUs and MPUs perform processing such as high-speed computation and control, so the integration density and the operating frequency are extremely high. Therefore, during operation, the chips themselves become hot and generate a large amount of heat. It becomes a heating element to be released. A semiconductor chip (heating element) that generates heat by high-speed arithmetic processing is converted into a semiconductor chip by a cooling device including a heat sink such as a fin using a fan, a heat pipe (HP), a vapor chamber (VC), and a loop heat pipe (LHP). Is cooled so that it operates well. In the future, however, semiconductor chips such as CPUs will become more sophisticated, and even if they become more sophisticated, the size of the semiconductor chip itself, which is a heat source, will be almost the same or smaller, so that current commercially available electronic devices A device using a thermoelectric semiconductor element (TEC) utilizing the Peltier effect which is hardly used is required.

  Thermoelectric semiconductor elements that cool semiconductor chips such as CPUs and MPUs generally have a plurality of p-type thermoelectric semiconductor elements and n-type thermoelectric semiconductor elements connected in series alternately via metal electrodes as junctions. It is created by forming a pn junction pair. Further, in order to optimally use heat absorption (cooling) and heat dissipation (heat generation) due to the Peltier effect, a plurality of pn junction pairs are electrically connected in series with a “π” structure. This “π” -type structure, so-called π-type bond, will be described with reference to FIG. 6. A pair of p-type electrodes formed by a p-type thermoelectric semiconductor element 101, an n-type thermoelectric semiconductor element 102, and a metal electrode 103 will be described. A plurality of −n junction pairs 104 are arranged in the same direction and joined by the metal electrode 103.

  In such a π-coupled thermoelectric semiconductor element, when a current I is passed from the n-type thermoelectric semiconductor element 102 to the p-type thermoelectric semiconductor element 101 by the power source 105, heat is absorbed at the upper part of the π-type in FIG. Heat is generated and heat is pumped from the top to the bottom. That is, the center metal electrode 103 in which electrons flow in the p-type to n-type direction (current is the n-type to p-type direction), and the boundary between the p-type thermoelectric semiconductor element 101 and the n-type thermoelectric semiconductor element 102. That is, in the upper part of FIG. 6, electrons move from a low energy state to a high energy state, so that vibration energy is absorbed from the surrounding crystal lattice and an endothermic phenomenon occurs. On the contrary, two locations, the boundary between the leftmost metal electrode 103 and the p-type thermoelectric semiconductor element 101 and the boundary between the rightmost metal electrode 103 and the n-type thermoelectric semiconductor element 102 where electrons flow from the n-type to the p-type direction. That is, in the lower part of FIG. 6, electrons that have absorbed vibrational energy in the upper part shift from a high energy state to a low energy state, so that surplus vibrational energy is applied to the surrounding crystal lattice and a heat generation phenomenon occurs.

  A thermoelectric semiconductor element modularized by connecting a plurality of, for example, several tens to several hundreds of the pn-coupled pn junction pairs in series is connected to a plurality of p connected in series. Due to the Peltier effect, when current flows through both electrodes of the −n junction pair, one side of the pn junction pair cools (heat absorption) and the other side of the pn junction pair generates heat (heat dissipation). It can be used as a cooling device (TEC). In addition, the thermoelectric semiconductor element modularized in this manner absorbs heat at one of the joints to be in a high temperature state, and sets the other of the joints at a lower temperature than one of the joints, When a temperature difference is generated at the joint portion, the Seebeck effect that generates an electromotive force due to the temperature difference can be used as a power generation device (TEG).

  The apparatus shown in FIG. 7 is a general thermoelectric cooling module 201 constituting a cooling apparatus (TEC) using such a thermoelectric semiconductor element. In this thermoelectric cooling module 201, the p-type thermoelectric semiconductor element 202 and the n-type thermoelectric semiconductor element 203 are π-coupled so that the thermoelectric semiconductor elements 202 and 203 are electrically in series and thermally conductive in parallel. Are arranged in a two-dimensional direction, that is, in a plane. Further, in this thermoelectric cooling module 201, the thermoelectric semiconductor elements 202 and 203 arranged and connected as described above are electrically insulative through terminals having good electrical conductivity, for example, copper plates 204 of an appropriate size. In addition, the structure is sandwiched between base members 205 made of a ceramic material having thermal conductivity. In this module 201, when a voltage is applied to the thermoelectric semiconductor elements 202 and 203 by the power source 206 to flow the current I, one surface constituting the ceramic base member 205 is uniformly on the cooling (heat absorption) side, The surface is uniformly the heat generation (heat dissipation) side. The effect of cooling and heat generation of the module 201 depends on the number of thermoelectric semiconductor elements 202 and 203 since the thermoelectric semiconductor elements 202 and 203 are formed in a planar shape as described above. The number of thermoelectric semiconductor elements 202 and 203 is determined by the plane area of the base member.

  The cooling device described in Patent Document 1 is configured without using a ceramic substrate when attaching a thermoelectric cooler (TEC). In general, when the TEC is energized, one side absorbs heat and the other radiates heat, and the ceramic substrate expands due to this temperature difference. Therefore, shear stress concentrates on the thermoelectric semiconductor element, making it difficult to ensure reliability. For this reason, there is a limit to the size of the thermoelectric semiconductor element. The limit of the size is 30 to 40 mm square, and the performance of the TEC depends on the height of the element, and if the height of the thermoelectric semiconductor element is lowered for high performance by lowering the height of the element, There is a problem that the size limit is further reduced.

  For this reason, in the cooling device described in Patent Document 1, a pair of resin substrates having a predetermined electrical connection region, for example, a through hole, an opening, and the like are used instead of the ceramic substrate. The through hole is filled with a metal having excellent heat and electrical conductivity to form a filled metal layer, the electric circuit metal layer is disposed outside the resin substrate, and each surface of the thermoelectric semiconductor element is interposed through the filled metal layer. And connect to the electric circuit metal layer. Since it is comprised in this way, in the cooling device of patent document 1, it has the structure which can make the thickness of a thermoelectric semiconductor element thin, can be high performance and can be enlarged.

  According to the cooling device described in Patent Document 1, since the through hole has a stress relaxation structure that relaxes the stress applied to the element without using a ceramic substrate, the stress due to strain accompanying the increase in the TEC area is reduced. can do. Therefore, the size can be increased and high reliability can be obtained. In addition, since an inexpensive insulating resin is used compared to a substrate using ceramic, it can be manufactured at a lower cost than a cooling device using ceramic. Furthermore, since the cooling device described in Patent Document 1 has a structure that does not use a ceramic substrate having low thermal conductivity, thermal resistance can be suppressed.

No. 2006/019059

  However, in the cooling module shown in FIG. 7 and the cooling device described in Patent Document 1, the thermoelectric cooling elements are arranged in a plane with the directions of the heat absorption (cooling) side and the heat dissipation (heat generation) side aligned. Therefore, the thermoelectric semiconductor element can be arranged only on the installed plane. The effect of the thermoelectric semiconductor element is proportional to the sum of the bottom areas where the thermoelectric semiconductor element and the installation member such as the substrate are in contact. Therefore, the effect is limited to the area of the installed plane by arranging the thermoelectric cooling elements in a planar shape.

  This invention was made paying attention to said technical subject, and provides the thermoelectric cooling device which increases the area which can install a thermoelectric semiconductor element, and further improves the cooling capacity and cooling effect by a thermoelectric semiconductor element. It is the purpose.

  In order to achieve the above object, the invention of claim 1 is provided with a number of thermoelectric cooling elements that are generated on opposite surfaces when energized, and a heat generating element is formed by the heat absorbing part. A plurality of thermoelectric cooling elements are arranged in a two-dimensional direction to form a cooling element unit, and a plurality of the cooling element units are stacked in a plurality of layers, and Between the cooling element units of each layer, a heat transfer member for transferring heat to and from these cooling element units is interposed, and the heat absorption part and the other of the one cooling element unit located across the heat transfer member The heat-absorbing part in the cooling element unit is in contact with the same heat-transfer member so as to be able to transfer heat, and the heat-generating part and the other in the one cooling element unit located between the other heat-transfer members A thermoelectric cooler, wherein the heat generating portion in the cooling element unit is in contact with a heat-transferable to another of the heat transfer member.

  The invention according to claim 2 is the thermoelectric cooling device according to claim 1, wherein the thermoelectric cooling element includes a configuration in which an electromotive force is generated from a temperature difference between the heat absorbing portion and the heat generating portion. is there.

  According to a third aspect of the present invention, in the first or second aspect of the invention, the heat transfer member in contact with the heat absorbing portion in the cooling element unit and the heat transfer member in contact with the heat generating portion in the cooling element unit are L-shaped. The thermoelectric cooling device is characterized by being formed by arranging a plurality of heat transfer members of a mold side by side.

  The invention of claim 4 is the thermoelectric cooling device according to any one of claims 1 to 3, wherein the heat transfer member transports heat in the form of latent heat.

  The invention of claim 5 is the thermoelectric cooling device according to any one of claims 1 to 4, wherein the heat transfer member is a vapor chamber.

  A sixth aspect of the present invention is the thermoelectric cooling device according to any one of the first to fourth aspects, wherein the heat transfer member is a heat pipe.

  A seventh aspect of the present invention is the invention according to any one of the first to sixth aspects, wherein the cooling element unit has a plurality of pairs of p-type elements on the polyimide sheet so as to absorb heat on one side and generate heat on the other side. And a n-type element are π-coupled to form a thermoelectric cooling device.

  The invention according to claim 8 is the invention according to any one of claims 1 to 7, wherein the heat discharged from the heat transfer member or the cooling element unit is transmitted to the heat transfer member. A thermoelectric cooling device comprising a heat radiating member that releases heat to the outside of the thermoelectric cooling device.

  A ninth aspect of the present invention is the thermoelectric cooling device according to any one of the first to eighth aspects, wherein the heat dissipating member includes fins.

  According to a tenth aspect of the present invention, in the invention according to any one of the first to ninth aspects, a small gap or unevenness is filled between the heat transfer member and the cooling element unit, and the thermal conductivity is better than that of air. A thermoelectric cooling device provided with grease.

  The invention of claim 11 is the invention according to any one of claims 1 to 10, wherein a small gap or unevenness is formed between the heat generating member and the heat transfer member and between the heat transfer member and the heat dissipation member. It is a thermoelectric cooling device that is filled with thermal grease that has better thermal conductivity than air.

  A twelfth aspect of the present invention is the thermoelectric cooling device according to any one of the first to eleventh aspects, further comprising a frame that surrounds and reinforces the periphery of the assembled heat transfer member.

  A thirteenth aspect of the present invention is the thermoelectric cooling device according to any one of the first to twelfth aspects, wherein the thermoelectric cooling element is a thermoelectric semiconductor element having a Peltier effect.

  The invention of claim 14 is the invention according to any one of claims 1 to 13, wherein the cooling element unit releases the amount of heat absorbed from the heat transfer member and the heat transfer member by changing input power. The thermoelectric cooling device is characterized in that the amount of heat is adjusted.

  A fifteenth aspect of the present invention is the thermoelectric cooling device according to any one of the first to fourteenth aspects, wherein the thermoelectric cooling element is a thermoelectric semiconductor element having a Seebeck effect.

  According to the first aspect of the present invention, a large number of thermoelectric cooling elements are arranged in a two-dimensional direction to form a cooling element unit, the plurality of cooling element units are stacked in a plurality of layers, and the transmission is further performed. The heat absorption part of one cooling element unit located across the heat member and the heat absorption part of the other cooling element unit are in contact with the same heat transfer member so that heat can be transferred, and the other heat transfer member is located between them. The heat generating part of one cooling element unit and the heat generating part of the other cooling element unit are in contact with another heat transfer member so as to be able to transfer heat. Thus, since a heat-transfer member and a cooling element unit are located, a cooling element unit is arrange | positioned by being laminated | stacked three-dimensionally and in layers. Therefore, a large number of cooling element units can be installed, and the number of thermoelectric cooling elements can be increased, thereby improving the ability to cool the heating element in this apparatus. In addition, cooling is not performed by directly contacting the heating element with the cooling element unit. In other words, since a heat transfer member is interposed, the cooling element unit or the thermoelectric cooling element is prevented from being damaged by thermal expansion or thermal stress. Can do.

  According to the invention of claim 2, since the cooling element units are arranged three-dimensionally and layered, the number of thermoelectric cooling elements for generating electric power can be increased. Thereby, the electromotive force by the temperature difference of the heat absorption part and heat_generation | fever part by a thermoelectric cooling element increases, and the capability to collect | recover electric power can be improved.

  According to the invention of claim 3, since the cooling device is formed by arranging a plurality of L-shaped heat transfer members, it is easy to provide a gap for arranging the cooling element units in layers. In addition, it is easy to manufacture the heat transfer member that contacts the heat absorbing portion of the cooling element unit and the heat transfer member that contacts the heat generating portion of the cooling element unit.

  According to the invention of claim 4, when the heat transfer member transports the absorbed heat, it transports the heat in the form of latent heat, so that it can transport the heat with low thermal resistance.

  According to the invention of claim 5, since the heat transfer member is a vapor chamber, heat is transported in the form of latent heat, so heat can be transported with low thermal resistance, and the space in the vicinity of the heating element. Even if this is limited, the cooling capacity can be improved.

  According to the invention of claim 6, since the heat transfer member is a heat pipe, the heat is transported in the form of latent heat, so that the heat can be transported with low heat resistance, and the space in the vicinity of the heating element. Even if this is limited, the cooling efficiency can be improved.

  According to the seventh aspect of the present invention, a plurality of pairs of p-type elements and n-type elements are previously π-coupled in a polyimide sheet shape with one surface on the heat absorption side and the other surface on the heat generation side. The thermoelectric cooling device can be efficiently produced by stacking the cooling element units configured in this manner and interposing a heat transfer member thereon to assemble the thermoelectric cooling device.

  According to the invention of claim 8, the heat absorbed from the heating element can be released to the outside of the thermoelectric cooling device by the heat radiating member.

  According to the ninth aspect of the present invention, the heat absorbed from the heating element can be efficiently released to the outside of the thermoelectric cooling device by the fin with high heat dissipation.

  According to the invention of claim 10, the thermal grease can reduce the thermal resistance between the heat transfer member and the cooling element unit, and heat can be transferred efficiently.

  According to the invention of claim 11, the thermal grease can reduce the thermal resistance between the heat generating member and the heat transfer member and between the heat transfer member and the heat radiating member, and heat can be transferred efficiently.

  According to invention of Claim 12, the intensity | strength of the heat-transfer member and cooling element unit or apparatus which were assembled | attached with the flame | frame can be increased.

  According to the thirteenth aspect of the present invention, the ability to cool the heating element can be improved by the Peltier effect.

  According to the invention of claim 14, by changing the input power, the heat absorption amount absorbed by the cooling element unit from the heat transfer member and the heat generation amount generated by the cooling element unit with respect to the heat transfer member are adjusted. It is possible to suppress power consumption caused by increasing input power more than necessary heat absorption and heat generation.

  According to the fifteenth aspect of the present invention, electric power can be recovered from the electromotive force due to the temperature difference between the heat absorbing portion and the heat generating portion by the thermoelectric cooling element due to the Seebeck effect.

It is a side view which represents typically the thermoelectric cooling device and heat generating body which concern on this invention. It is a figure which represents typically the 2nd cooling means (cooling element unit) which comprises the thermoelectric cooling device which concerns on this invention. It is a cross-sectional view schematically showing the main part of the thermoelectric cooling device according to the present invention and viewing the inside. It is a top view which represents typically the state by which the flame | frame was attached to the circumference | surroundings of the thermoelectric cooling device which concerns on this invention. It is a front view showing typically the state where the frame was attached to the circumference of the thermoelectric cooling device concerning this invention. It is a schematic diagram for demonstrating the pi coupling of a thermoelectric semiconductor element. It is a figure which represents the conventional thermoelectric cooling module typically.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. A thermoelectric cooling device (TEC) 1 of the present invention shown in FIG. 1 is a device that cools a heating element 2. The heating element 2 is provided in an electronic device such as a personal computer, and is a high-performance semiconductor chip such as a central processing unit (CPU) and a microprocessor (MPU) mounted on a substrate. In recent years, the heating element 2 such as a semiconductor chip has an extremely high integration density and an operating frequency in order to perform processing such as calculation and control at a high speed. Therefore, the chip itself has a high temperature during operation. And releases a lot of heat. In order to prevent abnormal operation due to high temperature, the operating frequency is limited, and cooling is required to operate at higher speed.

  In order to cool the heating element 2, the thermoelectric cooling device 1 of the present invention has a first cooling means 3, a second cooling means 4, a third cooling means 5 and a frame 6 shown in FIGS. Hereinafter, it demonstrates in order of a heat transfer path | route.

  First, the first cooling means 3 will be described. As shown in FIG. 1, the 1st cooling means 3 is comprised by the L-shaped members 7 and 8, and the upper end part assembled | attached is in contact with the heat generating body 2 in the state in which heat transfer is possible. . In order to increase the flatness of the contact surface between the heating element 2 and the first cooling means 3 in order to reduce the thermal resistance, in other words, the heating element 2 and the first cooling means 3 are in contact with each other. Thermal grease is applied to fill the surface irregularities. The L-shaped members 7 and 8 constituting the first cooling means 3 are L-shaped vapor chambers or heat pipes, or high purity copper having high heat conductivity and good workability. The first heat transfer member 7 and the second heat transfer member 8 are formed from a member molded into a mold.

  A vapor chamber or heat pipe is a two-phase heat transport device with excellent heat transport capability that transports heat in the form of latent heat. In this vapor chamber or heat pipe, a working fluid that is a working liquid is sealed in a sealed container. When one end of the container is heated, the working fluid evaporates and the vapor moves to the other cold end of the container and returns to the liquid. The working fluid that has returned to the liquid moves again to one end through a capillary structure such as a wick. Since this vapor chamber or heat pipe has a large latent heat during evaporation, a very large amount of heat can be transported with a very small temperature difference between one end and the other end of the container. Note that an appropriate hydraulic fluid is selected based on the applied operating temperature. For example, when applied to a high-performance personal computer or the like, the operating temperature is usually 50 to 100 ° C., and water is most suitable for the working fluid in this operating range. Since the heat is transported in the form of latent heat, the vapor chamber or heat pipe has a very low thermal resistance compared to solid copper or the like of the same size. Further, the vapor chamber has a high heat transport capability and a low thermal resistance because the heat flow becomes two-dimensional compared to the one-dimensional flow of the heat pipe. Furthermore, the vapor chamber has a lower thermal resistance compared to heat pipes of the same size. On the other hand, the heat pipe can be made into a predetermined shape by bending or flattening one manufactured in comparison with the vapor chamber.

  Further, since copper is easy to process and has better thermal conductivity than other metals, in a situation where the heating element 2 can be sufficiently cooled by the cooling power of the second cooling means 4 described later, 1 The cooling means 3 can be used as a member.

  The first cooling means 3 is a first chamber of the same shape which is either the above-described vapor chamber formed by being bent into an L shape, a heat pipe, or a member formed by hollow or solidly forming copper into an L shape. The heat transfer member 7 and the second heat transfer member 8 are combined. Hereinafter, the first heat transfer member 7 and the second heat transfer member 8 will be described as a vapor chamber or a heat pipe.

  As shown in FIG. 1, a plurality of the first heat transfer members 7 and the second heat transfer members 8 are alternately arranged, and the L-shaped concave portions are arranged in a state of facing each other with a predetermined gap. In addition, the back surfaces of the L-shaped recesses are arranged with a predetermined gap therebetween. In other words, the upper surfaces 7a of the plurality of first heat transfer members 7 are arranged and coupled in a state where the upper surfaces 7a are flush with each other and are aligned. The plurality of combined upper surfaces 7 a constitute the heat absorbing surface 3 a in the first cooling means 3 that absorbs the heat radiated from the heating element 2. For each of the plurality of first heat transfer members 7 arranged side by side in this manner, the second heat transfer member 8 is located in the gap between the inner side surface 7b and the outer side surface 7c of the first heat transfer member 7. The inner side surface 7b and the inner side surface 8a of the second heat transfer member 8 are arranged facing each other with a predetermined gap, and the outer side surface 7c and the outer side surface 8b of the second heat transfer member 8 are predetermined. It arrange | positions in the state which provided the clearance gap and opposed. Further, the inner upper surface 7d of the first heat transfer member 7 and the upper surface 8c of the second heat transfer member 8 are arranged to face each other with a predetermined gap, and further, the bottom surface 7e of the first heat transfer member 7 is arranged. And the inner and lower surfaces 8d of the second heat transfer member 8 are arranged facing each other with a predetermined gap. On the other hand, the bottom surfaces 8e of the plurality of second heat transfer members 8 are arranged and coupled in a state where they are flush with a gap. The plurality of combined bottom surfaces 8 e constitute a heat radiating surface 3 b in the first cooling means 3 that releases heat to the third cooling means 5.

  Since the plurality of first heat transfer members 7 and the plurality of second heat transfer members 8 are thus arranged, a laminar gap is formed inside the first cooling means 3. That is, a plurality of the first heat transfer members 7 and the second heat transfer members 8 are alternately arranged, and the inner side surface 7b of the first heat transfer member 7 and the inner side surface of the second heat transfer member 8 are arranged. 8a is disposed in a state of being opposed to each other with a predetermined gap, and the outer surface 7c of the first heat transfer member 7 and the outer surface 8b of the second heat transfer member 8 are opposed to each other with a predetermined gap. Therefore, a laminar gap as shown in FIG. 1 is formed inside the first cooling means 3. In addition, the plurality of first heat transfer members 7 and the plurality of second heat transfer members 8 are fixed by a support member (not shown) or a general fastening method in such a state. Note that the first heat transfer member 7 and the second heat transfer member 8 do not have to have the same shape as long as such a layered gap can be formed. A second cooling means (TEC, cooling element unit) 4 is installed in each of the layered gaps. In other words, the cooling element units 4 are stacked in this layered gap with the plurality of alternately arranged first heat transfer members 7 and second heat transfer members 8 interposed therebetween.

As shown in FIG. 2, the second cooling means (TEC, cooling element unit) 4 is an organic polymer having high heat resistance and insulating properties. The p-type thermoelectric semiconductor elements 10 and the n-type thermoelectric semiconductor elements 11 are arranged in a state where they are alternately wired in series. The thermoelectric semiconductor elements 10 and 11 will be described. As an example, these thermoelectric semiconductor elements 10 and 11 are made of a ceramic composite material having a high absolute thermoelectric constant. For example, the p-type thermoelectric semiconductor elements 10 include Bi ₂ Sb ₈ Te ₁₅ and Bi. Ge Te, Ag Sb Te ₂ , Cr Si ₂ , MnSi _{1.73 and the} like to which is added can be used. As the n-type thermoelectric semiconductor element 11, Bi Te2 Se, In As to which P is added, Co Si, or the like can be employed.

  The thermoelectric semiconductor elements 10 and 11 are easily placed and fixed on the polyimide sheet 9 and are efficient when installed in the layered gap between the first heat transfer member 7 and the second heat transfer member 8. The size is defined to be a predetermined size so that heat can be transferred well. In addition, in the manufacturing method of each thermoelectric semiconductor element 10 and 11 so that it may become such a predetermined dimension, the starting material containing an additive element is first pulverized, or the ingot obtained by melt-mixing is pulverized and pulverized. Then, a binder is added and granulated. The obtained granular material is sieved, the particle diameter is made uniform, this is put into a predetermined die, and cold pressed to obtain a green compact. Next, the green compact is heated in vacuum, and degreasing and sintering for removing the binder are continuously performed. And it heats in air | atmosphere, heat-processes, gives a predetermined characteristic, and also slices as needed, and obtains each thermoelectric semiconductor element 10 and 11 of a predetermined dimension.

  In each of the thermoelectric semiconductor elements 10 and 11, when a current flows, one surface of the element becomes the heat absorption (cooling) surfaces 10a and 11a, and the other surface becomes the heat dissipation (heat generation) surfaces 10b and 11b. The p-type thermoelectric semiconductor element 10 and the n-type thermoelectric semiconductor element 11 in which such an action occurs are electrically connected to a pn junction pair 12 electrically connected in series via a metal electrode (not shown) to a pn junction pair 12. When I is flown, heat is generated on one side of the π-type and heat is generated on the other side, and the heat is pumped from one side to the other. That is, the boundary between the metal electrode through which electrons flow from the p-type to the n-type and the endothermic surface 10a of the p-type thermoelectric semiconductor element 10 and the direction of the electrons from the p-type to the n-type (current is from the n-type to the p-type) At each boundary between the metal electrode flowing through and the endothermic surface 11a of the n-type thermoelectric semiconductor element 11, electrons shift from a low energy state to a high energy state, so that vibration energy is absorbed from the surrounding crystal lattice to absorb heat. A phenomenon occurs. Conversely, the boundary between the metal electrode in which electrons flow from the n-type to p-type and the heat dissipation surface 10b of the p-type thermoelectric semiconductor element 10 and the metal electrode in which electrons flow from the n-type to p-type and the n-type thermoelectric At the boundary between the semiconductor 11 and the heat radiating surface 11b, electrons that have absorbed vibration energy shift from a high energy state to a low energy state, so that surplus vibration energy is applied to the surrounding crystal lattice and a heat dissipation phenomenon occurs.

  Thus, one side becomes the heat absorption side and the other side becomes the heat dissipation side, and a plurality of pn junction pairs 12 that can obtain the effect of the Peltier effect are arranged and electrically connected in series by π-type coupling. It is arranged on the polyimide sheet 9. A plurality of pairs of p-type thermoelectric semiconductor elements 10 and n-type thermoelectric semiconductor elements 11 are formed on the polyimide sheet 9 and arranged in a two-dimensional lattice pattern. Further, a plurality of pairs of p-type thermoelectric semiconductor elements 10 and n-type thermoelectric semiconductor elements 11 on the polyimide sheet 9 are formed from the first heat transfer member 7 and the second heat transfer member 8 described above. Layered gaps, specifically, the opposing surfaces of the inner surface 7b of the first heat transfer member 7 and the inner surface 8a of the second heat transfer member 8 and the outer surface 8b of the first heat transfer member 8 It arrange | positions so that it may match the dimension of the surfaces which oppose the outer surface 7c of the 2nd heat-transfer member 7, and has comprised the unification (aggregate | aggregation). A plurality of regions in which the p-type thermoelectric semiconductor elements 10 and the n-type thermoelectric semiconductor elements 11 arranged in this way are provided on the polyimide sheet 9. In each region where the p-type thermoelectric semiconductor element 10 and the n-type thermoelectric semiconductor element 11 are provided, the p-type thermoelectric semiconductor element 10 and the n-type thermoelectric semiconductor element 11 are connected in series. Conductive wires 13 are provided at one end and the other end.

  The cooling element unit (second cooling means) 4 configured in this way has one surface uniformly serving as a heat absorbing surface 4a and the other surface uniformly serving as a heat radiating surface 4b. As shown in FIG. 1 or FIG. 3, the heat absorbing surface 4 a is disposed and attached so as to face the inner side surface 7 b and the outer side surface 7 c, which are heat radiating surfaces of the first heat transfer member 7, so as to be able to transfer heat. On the other hand, the heat radiating surface 4b of the cooling element unit 4 is disposed and attached so as to face the inner side surface 8a and the outer side surface 8b which are heat absorbing surfaces of the second heat transfer member 8 so as to be able to transfer heat. In other words, the inner side surface 7b of the first heat transfer member 7 and the heat absorption surface 4a of the cooling element unit 4 are mounted so as to be able to transfer heat, and the heat radiation surface 4b of the cooling element unit 4 and the second heat transfer surface are mounted. The inner surface 8a of the member 8 is attached so as to be capable of transferring heat, and the cooling element unit 4 is sandwiched (interposed) in a gap between the inner surface 7b and the inner surface 8a. The outer surface 8b of the second heat transfer member 8 and the heat radiating surface 4b of the cooling element unit 4 are opposed to each other so as to be able to transfer heat, and the heat absorption surface 4a of the cooling element unit 4 and the first heat transfer member 7 is attached to the outer surface 7c so as to be capable of transferring heat, and the cooling element unit 4 is sandwiched (interposed) between the outer surface 8b and the outer surface 7c. In this way, the cooling element unit 4 is sandwiched (interposed) in a gap formed by the plurality of first heat transfer members 7 and second heat transfer members 8 that are provided.

  When the cooling element unit 4 is provided in a layered manner in a gap formed by the plurality of first heat transfer members 7 and the second heat transfer members 8, the thermoelectric semiconductor elements 10 and 11 of the cooling element unit 4 and the heat transfer The boundary where the members 7 and 8 are in contact is configured to be electrically insulative and thermally conductive. Therefore, for example, the installation state of the p-type thermoelectric semiconductor element 10 and the n-type thermoelectric semiconductor element 11 on the polyimide sheet 9 is the endothermic surface of the p-type thermoelectric semiconductor element 10 and the n-type thermoelectric semiconductor element 11. 10a, 11a and the heat radiating surfaces 10b, 11b are in an exposed state, a state coated with ceramic, or a state in which thermal grease is applied.

  Moreover, when it arrange | positions in the clearance gap which the 1st heat-transfer member 7 and the 2nd heat-transfer member 8 in which the sheet-like cooling element unit 4 was provided in multiple numbers, it is 1st with respect to this layered gap | interval. The opposing surfaces of the inner surface 7b of the heat transfer member 7 and the inner surface 8a of the second heat transfer member 8 or the outer surface 8b of the first heat transfer member 8 and the outer surface of the second heat transfer member 7 It is possible to arrange the sheet-like cooling element unit 4 in a folded manner so as to be adapted to the faces facing each other 7c. In addition, the sheet-like cooling element unit 4 divided into a plurality of parts is configured such that the opposing surfaces of the inner side surface 7b of the first heat transfer member 7 and the inner side surface 8a of the second heat transfer member 8 face each other or the first transfer surface. A configuration in which the outer surface 8b of the heat member 8 and the outer surface 7c of the second heat transfer member 7 are opposed to each other may be arranged for each layer.

  As described above, the cooling element units 4 arranged in the gaps formed by the first heat transfer member 7 and the second heat transfer member 8 are p-type thermoelectric semiconductor elements arranged together on the polyimide sheet 9. In order to connect the regions provided with 10 and the n-type thermoelectric semiconductor element 11, the cooling element unit 4 disposed between adjacent layers via a conductive wire 13 provided to connect the regions. Are connected by a connector 14. Further, as shown in FIG. 1, on the left and right sides of the first cooling means 3, the gap between the bottom surface 7 e of the first heat transfer member 7 and the inner lower surface 8 d of the second heat transfer member 8 and the first heat transfer. A gap is provided between the inner upper surface 7 d of the heat member 7 and the upper surface 8 c of the second heat transfer member 8. As described above, the left and right sides of the first cooling means 3 are provided with open portions. A conducting wire 13 connected to the p-type thermoelectric semiconductor element 10 at one end of the cooling element unit 4 all connected in series from the opened portion is connected to a power supply device (not shown), and the cooling element unit 4 The conducting wire 13 connected to the n-type thermoelectric semiconductor element 11 at the other end is connected to a power supply device (not shown). This power supply device has a function of automatically or manually adjusting the cooling state by the second cooling means (cooling element unit) 4 by a control device and / or a sensor (not shown).

  Further, as shown in FIG. 1, the thermoelectric cooling device 1 of the present invention is provided with third cooling means (heat radiating member) 5 which is opposed to the heat radiating surface 3b of the first cooling means 3 so as to be able to transfer heat. They are. In order to reduce the thermal resistance, the contact surface has a flatness of the surface where the heat radiating surface 3b of the first cooling means 3 and the third cooling means 5 are in contact with each other, in other words, the heating element 2 and the first cooling means. Thermal grease is applied to fill the irregularities on the surface that contacts the means 3. The third cooling means 5 is a heat sink 5 formed of aluminum or the like provided with a plurality of fins 15. A plurality of fins 15 are provided at intervals. Thereby, the surface area is enlarged by the several fin 15 provided in the layer form. In addition, it is good also as a structure which raises heat dissipation power to this heat sink 5 by providing air blowers, such as a fan which is not shown in figure. Further, in a situation where the heating element 2 can be sufficiently cooled by the cooling power of the second cooling means 4, it may be configured not to use a blower such as a fan (not shown) from the viewpoint of quietness.

  Further, the cooling element unit 4 is accommodated in a layered manner, and the outer periphery of the first cooling means 3 in which the plurality of first heat transfer members 7 and the plurality of second heat transfer members 8 are assembled is shown in FIGS. A frame 6 shown in FIG. The frame 6 covers the periphery of the side surface of the first cooling means 3, the surface where the heating element 2 contacts the first cooling means 3 and the surface where the first cooling means 3 contacts the third cooling means 5 for heat transfer. Is shaped to be open. Note that the material of the frame 6 may be an electrically insulating material.

  Next, another embodiment of the present invention will be described with reference to the drawings. As shown in FIGS. 1 to 3, the thermoelectric cooling device 1 in this other embodiment has a first power generation means (TEG) having the same configuration as the second cooling means (cooling element unit) 4 in the above-described embodiment. ) 17. Further, since the other configurations are almost the same, the description of the same configuration is omitted. In the first power generation means 17, the cooling element unit 4 is used as a Thermo Electric Generator (TEG). That is, the first power generation means 17 is configured in the same manner as the cooling element unit 4 by a plurality of p-type thermoelectric semiconductor elements 10 and n-type thermoelectric semiconductor elements 11 provided on the polyimide sheet 9. Further, the configuration of the first power generation means 17 and the arrangement in the thermoelectric cooling device 1 are the same as those of the second cooling means 4, and the heat absorption surface 17a and the heat generation surface 17b are provided in the same manner as the heat absorption surface 4a and the heat dissipation surface 4b. is doing. And the conducting wire 13 of the both ends of the 1st electric power generation means 17 (cooling element unit 4) couple | bonded pi in series is connected to the electrical storage apparatus etc. which are not shown in figure. Since the p-type thermoelectric semiconductor element 10 and the n-type thermoelectric semiconductor element 11 have different uses from the embodiment, elements having different configurations may be used.

  Hereinafter, the operation of the thermoelectric cooling device 1 in the embodiment of the present invention will be described. The heating element 2 disposed in contact with the heat absorbing surface 3a of the first cooling means 3 in FIG. 1 is a high-performance semiconductor chip such as a central processing unit (CPU) and a microprocessor (MPU). The surface becomes hot to operate. The heat released from the heating element 2 that has reached a high temperature is in contact with the heating element 2 so that heat can be transferred via thermal grease applied to the contact surface between the heating element 2 and the first cooling means 3. It is absorbed from the endothermic surface 3a of the cooling means 3. The heat generating body 2 is cooled by the first cooling means 3 absorbing heat.

  The heat absorbed by the heat absorbing surface 3a of the first cooling means 3 positioned in contact with the heating element 2, that is, the upper surfaces 7a of the plurality of first heat transfer members 7, is the first heat transfer that is a vapor chamber or a heat pipe. On the upper surface 7a side of the member 7, the internal liquid (working fluid) evaporates. The steam moves to the bottom surface 7e side of the first heat transfer member 7 having a low energy state. The steam that has moved to the bottom surface 7e side of the first heat transfer member 7 is subjected to a voltage across the inner surface 7b and the outer surface 7c of the first heat transfer member 7 by the power supply device (not shown) to the conductors 13 at both ends thereof. The cooling element unit 4 to which is applied is cooled by the respective heat absorbing surfaces 4a facing the inner surface 7b and the outer surface 7c of the first heat transfer member 7. The cooled vapor returns to the liquid and returns to the upper surface 7a side of the first heat transfer member 7 again by a capillary force such as a wick. Note that when the first heat transfer member 7 is a member formed by hollow or solid L-shaped copper, heat is conducted in the same manner as normal metal heat conduction. In this case, the 1st heat-transfer member 7 tends to become high temperature uniformly, Therefore, the other edge part in the 1st heat-transfer member 7 also becomes high temperature. Further, at the time of cooling, adjustment is performed automatically or manually so that the heating element 2 is appropriately cooled by a control device and / or a sensor provided in a power supply device (not shown).

  On the other hand, the heat released from the inner side surface 7b which is the heat radiating surface of the first heat transfer member 7 is opposed to the inner side surface 7b of the first heat transfer member 7 through thermal grease or the like applied to the contact surface. The heat absorbed by the heat-absorbing surface 4a of the cooling element unit 4 that is in contact with the heat-radiating surface and released from the outer surface 7c, which is the heat-dissipating surface of the first heat-transfer member 7, is absorbed by the thermal grease applied to the contact surface. Then, it is absorbed by the heat absorbing surface 4a of the other cooling element unit 4 facing the outer surface 7c of the first heat transfer member 7. The heat absorbed by the heat absorbing surface 4a of the cooling element unit 4 from the inner side surface 7b is transported to the heat radiating surface 4b side of the cooling element unit 4 by the Peltier effect. The heat absorbed by the heat absorbing surface 4a of the other cooling element unit 4 from the outer side surface 7c is transported to the heat radiating surface 4b side of the other cooling element unit 4 by the Peltier effect.

  The heat transported to the heat radiating surface 4b side of the cooling element unit 4 and the heat released from the heat radiating surface 4b side of another cooling element unit 4 are the same through the thermal grease applied to the contact surface. The heat transfer member 8 is discharged to the inner surface 8a and the outer surface 8b. The heat absorbed by the inner side surface 8a and the outer side surface 8b of the second heat transfer member 8 causes the working fluid on the upper surface 8c side of the second heat transfer member 8 to evaporate. The steam moves to the bottom surface 8e side of the second heat transfer member 8 having a low energy state. The steam that has moved to the bottom surface 8e side of the second heat transfer member 8 can transfer heat to the bottom surfaces 8e of the plurality of second heat transfer members 8, that is, the heat radiation surface 3b of the first cooling means 3 via thermal grease or the like. It cools by the 3rd cooling means (heat sink) 5 which contacted. The heat transmitted to the heat sink 5 is released into the atmosphere or the like by the plurality of fins 15 without affecting the heating element 2 by heat. Furthermore, when a fan is attached to the 3rd cooling means 5, the heat | fever by the fin 15 is ventilated to a fan, and it thermally radiates still more efficiently.

  Next, the operation of the thermoelectric cooling device 1 according to another embodiment of the present invention will be described. The first power generation means 17 utilizes the Seebeck effect, and the heat generated by the heating element 2 is transported to the inner side surface 7b of the first heat transfer member 7 as in the embodiment. The heat transported to the inner side surface 7b of the first heat transfer member 7 is absorbed by the heat absorption (cooling) surfaces 10a and 11a of the thermoelectric semiconductor elements 10 and 11 on the polyimide sheet 9 through the thermal grease. The heat absorbed by the heat absorbing surfaces 10a and 11a of the thermoelectric semiconductor elements 10 and 11 is converted into generated power by the Seebeck effect of the thermoelectric semiconductor elements 10 and 11 that are π-coupled in series. The action of converting this heat into generated power is such that the endothermic surfaces 10a and 11a of each thermoelectric semiconductor element 10 on the polyimide sheet 9 become high temperature, whereby the heat radiation (heat generation) surfaces 10b and 11b of each thermoelectric semiconductor element 11 are relative to each other. This is because the electromotive force is generated in each of the thermoelectric semiconductor elements 10 and 11 due to the difference in energy state between the heat absorbing surfaces 10a and 11a and the heat radiating surfaces 10b and 11b due to the temperature difference. Then, it is stored in a battery or the like (not shown) via the conductive wire 13 or used as generated power.

  On the other hand, the heat transported to the heat generating surfaces 10 b and 11 b of the thermoelectric semiconductor elements 10 and 11 on the polyimide sheet 9 is absorbed by the inner side surface 8 a and the outer side surface 8 b of the second heat transfer member 8. The heat transfer path from the inner side surface 8a and the outer side surface 8b of the second heat transfer member 8 to the heat radiation by the third cooling means 5 is the same as that of the embodiment of the present invention. Note that the operation of the thermoelectric cooling device 1 in this other embodiment, that is, the operation of using the cooling element unit 4 as a power generation element is the configuration or heating element in which the cooling requirement in the embodiment is low or no thermoelectric cooling is required. It can be executed in the embodiment when the heat generation of 2 is a situation where thermoelectric cooling is not necessary.

  According to the thermoelectric cooling device 1 configured as described above, first, in the first cooling means 3, the heat from the heating element 2 is absorbed by the heat absorbing surface 3 a of the first cooling means 3 through the thermal grease. Heat can be transferred to the first cooling means 3 with low thermal resistance. Further, since the first cooling means 3 is composed of a vapor chamber or a heat pipe having a low thermal resistance, heat can be transported to the second cooling means 4 with a low thermal resistance. Further, since the first cooling means 3 is composed of a vapor chamber or a heat pipe having a low thermal resistance, heat is transported and transmitted in the form of latent heat, so that efficient heat transport can be performed with low thermal resistance. At the same time, even if the vicinity of the heating element 2 is a limited cooling space, it can be efficiently cooled. Further, since the first cooling means 3 is provided, the heat from the heating element is not directly absorbed by the second cooling means 4, that is, the thermoelectric semiconductor elements 10 and 11 of the first power generation means 17. The thermoelectric semiconductor elements 10 and 11 are not damaged by the above. Moreover, since the 1st heat-transfer member 7 and the 2nd heat-transfer member 8 in the 1st cooling means 3 are L-shaped members, it arranges two or more and arranges the cooling element unit 4 in layers easily The gap for this purpose can be formed in layers, and the productivity is improved. Furthermore, since heat transfer to the second cooling means 4 is performed via thermal grease, heat transfer from the first cooling means 3 to the second cooling means 4 can be performed efficiently.

  Next, in the second cooling means 4, p-type thermoelectric semiconductor elements 10 and n-type thermoelectric semiconductor elements 11 in which a plurality of cooling element units 4 are provided on the polyimide sheet 9 are alternately arranged in a lattice shape, and alternately Therefore, all the thermoelectric semiconductor elements 10 and 11 can be connected by series π coupling simply by connecting the conducting wire 13 and the connector 14. In addition, the cooling element unit 4 includes a p-type thermoelectric semiconductor element 10 and an n-type thermoelectric semiconductor element 11 arranged in series on the polyimide sheet 9, and one surface becomes a heat absorbing surface 4 a, Since the surface is preliminarily configured to be the heat radiating surface 4b, the cooling element unit 4 configured in this way may be disposed in the laminar gap formed inside the first cooling means 3, respectively. Improves.

  According to this thermoelectric cooling device 1, the first heat transfer member 7 and the second heat transfer member 8 in the first cooling means 3 constitute a plurality of layered gaps as described above, and the layered gaps. By arranging and laminating a plurality of cooling element units 4 so as to be capable of transferring heat, the number of thermoelectric semiconductor elements 10 and 11 that can be installed increases, and the area of the heat absorption surface (cooling surface) 4a of the cooling element unit 4 increases. As a result, the cooling effect of the second cooling means 4 or the power generation effect of the first power generation means 17 is improved. In addition, since the voltage applied to the thermoelectric semiconductor elements 10 and 11 can be adjusted by the control device, the second cooling means 4 is cooled by increasing the input power beyond the required heat absorption (cooling) and heat dissipation (heat generation) capabilities. Voltage consumption can be suppressed.

  And since heat is transmitted from the second heat transfer member 8 of the first cooling means 3 to the third cooling means 5 through the thermal grease, heat can be transmitted efficiently. Further, since the third cooling means 5 constituted by a plurality of fins 15 and the like is provided, the heat generating element 2 in the atmosphere or the like that does not affect the heat generating element 2 with the heat absorbed from the heat generating element 2. Heat can be released away from Further, since the frame 6 is provided around the first cooling means 3 constituted by the first heat transfer member 7 and the second heat transfer member 8, it is possible to increase the strength of the entire apparatus and hold it. it can.

  In addition, although this thermoelectric cooling device 1 showed the structure which has the two heat-transfer members 7 and 8 of the 1st heat-transfer member 7 and the 2nd heat-transfer member 8 in the said structure, for example, it is 2nd The heat transfer member 8 may be omitted, and the heat transferred from the first heat transfer member 7 may be radiated directly from the second cooling means 4 by the third cooling means 5. In this case, the third cooling means 5 is in contact with the heat radiation surface 4b of the second cooling means 4 so as to be able to transfer heat. In addition, as described above, the thermoelectric cooling device 1 has a configuration in which the configuration of the second cooling means 4 can combine the configuration for cooling and the configuration for generating power, and simultaneously execute thermoelectric cooling and thermoelectric power generation in an adjustable manner. May be. Further, the first heat transfer member 7 and the second heat transfer member 8 are L-shaped heat transfer members, but with respect to the layered gap formed inside the first cooling means 3. As long as the cooling element unit 4 can be stacked and interposed, it is not limited to the L-shaped member, and for example, a T-shaped member may be used. In that case, for example, by arranging the concave portions of the T-shaped heat transfer member to face each other with a predetermined gap therebetween, the first heat transfer member 7 and the second heat transfer member are arranged similarly to the embodiment of the present invention. The heat element 8 is interposed, and the cooling element unit 4 is stacked and arranged.

  The correspondence between the present invention and the embodiment will be described. The thermoelectric cooling elements according to the present invention are the thermoelectric semiconductor elements 10 and 11 in the examples, and the heat radiating member according to the present invention is the third cooling means 5. is there.

  4 ... Cooling element unit (second cooling means), 4a ... Heat absorbing portion (heat absorbing surface, cooling surface), 4b ... Heat generating portion (heat generating surface, heat radiating surface), 7 ... Heat transfer member (first heat transfer member), 8 ... Heat transfer member (second heat transfer member), 10, 11 ... Thermoelectric cooling (semiconductor) element.

Claims (15)

In the thermoelectric cooling device that includes a large number of thermoelectric cooling elements that are generated on opposite surfaces of the heat absorbing portion and the heat generating portion by energization, and cools the heat generated by the heat generating body by the heat absorbing portion,
The multiple thermoelectric cooling elements are arranged in a two-dimensional direction to form a cooling element unit,
A plurality of the cooling element units are stacked in a plurality of layers, and a heat transfer member that moves heat in and out of the cooling element units is interposed between the cooling element units of each layer,
The heat-absorbing part in one of the cooling element units and the heat-absorbing part in the other cooling element unit located across the heat-transfer member are in contact with the same heat-transfer member so that heat can be transferred, and the other heat-transfer member A thermoelectric cooling device, wherein a heat generating part in one of the cooling element units and a heat generating part in the other cooling element unit located across the other are in contact with the other heat transfer member so that heat can be transferred.   The thermoelectric cooling device according to claim 1, wherein the thermoelectric cooling element includes a configuration in which an electromotive force is generated from a difference in temperature between the heat absorbing portion and the heat generating portion.   The heat transfer member in contact with the heat absorption part in the cooling element unit and the heat transfer member in contact with the heat generation part in the cooling element unit are formed by arranging a plurality of L-shaped heat transfer members side by side. The thermoelectric cooling device according to claim 1 or 2.   The thermoelectric cooling device according to claim 1, wherein the heat transfer member transports heat in the form of latent heat.   The thermoelectric cooling device according to claim 1, wherein the heat transfer member is a vapor chamber.   The thermoelectric cooling device according to any one of claims 1 to 4, wherein the heat transfer member is a heat pipe.   The cooling element unit is configured such that a plurality of pairs of p-type elements and n-type elements are π-coupled on a polyimide sheet so as to absorb heat on one surface and generate heat on the other surface. The thermoelectric cooling device according to any one of claims 1 to 6.   A heat dissipating member is provided outside the heat transfer member, to which heat exhausted from the heat transfer member or the cooling element unit is transmitted, and the transferred heat is released to the outside of the thermoelectric cooling device. The thermoelectric cooling device according to any one of claims 1 to 7.   The thermoelectric cooling device according to claim 1, wherein the heat dissipating member includes a fin.   10. A thermal grease having better thermal conductivity than air is provided between the heat transfer member and the cooling element unit so as to fill a small gap or unevenness. Thermoelectric cooling device.   Thermal grease having better thermal conductivity than air is provided between the heat generating member and the heat transfer member and between the heat transfer member and the heat dissipation member by filling a small gap or unevenness. The thermoelectric cooling device according to any one of claims 1 to 10.   The thermoelectric cooling device according to claim 1, further comprising a frame that surrounds and reinforces the periphery of the assembled heat transfer member.   The thermoelectric cooling device according to claim 1, wherein the thermoelectric cooling element is a thermoelectric semiconductor element having a Peltier effect.   The amount of heat absorbed from the heat transfer member and the amount of heat released toward the heat transfer member are adjusted by changing the input power of the cooling element unit. The thermoelectric cooling device as described.   The thermoelectric cooling device according to claim 1, wherein the thermoelectric cooling element is a thermoelectric semiconductor element having a Seebeck effect.

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