JP2563524B2 - Thermoelectric device - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric generator useful for an air conditioner that electrically cools or heats by utilizing the Peltier effect, or a power generator that generates electricity using a temperature difference by the Seebeck effect. Regarding the device.

2. Description of the Related Art Conventionally, as shown in FIG. 2, a thermoelectric element for converting heat into electricity or converting electricity into heat has an N-type semiconductor 3 or a P-type semiconductor 4 with a metal plate 1 and a metal plate 2. It has a structure of sandwiching, and power is generated by the temperature difference between the metals on both sides, or cooling is performed by passing an electric current.

In the conventional example of FIG. 2, the N-type semiconductor 3 and the P-type semiconductor 4 are used.
Are alternately arranged in series, and when a potential is applied between the terminals 5 and 6, one of the metal plates is cooled and the other is heated.

FIG. 3 shows an example in which the conventional thermoelectric device is used for heating and cooling. In such a thermoelectric device, the thermoelectric element 7 as shown in FIG.
The outside air 10, 11 is guided to the thermoelectric element surface by the 8, fan 9.

The outside air 10, 11 is heated or cooled from the surface of the thermoelectric element 7 and the grids 12, 13 which are in thermal contact with the surface of the thermoelectric element 7 in order to secure a heat transfer area between the thermoelectric element 7 and the outside air 10, 11. Then it is blown out from the grids 12 and 13.

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in such a conventional thermoelectric device, due to the configuration of the heat transfer element and the grid, 1. The contact heat resistance between the grid and the heat transfer element that secures a heat exchange area with the outside air is large.

2. Since a large amount of heat generated from the entire heat transfer element is exchanged with air, it is necessary to increase the heat transfer area of the grid, which lengthens the grid and reduces fin efficiency.

Due to such problems, there is a problem that the temperature difference between both end faces of the thermoelectric element becomes large and the efficiency is lowered.

The present invention provides a thermoelectric device having a structure that realizes heat absorption and exhaust heat between a thermoelectric element and air with a low temperature difference based on the above problems, and improves thermoelectric performance.

Means for Solving the Problems A plate-shaped N-type (or P-type) semiconductor, or a plate-shaped P-type (or N-type) semiconductor joined in a wedge shape, the N-type semiconductor and the P-type semiconductor are alternately positioned. As described above, a plurality of sets are electrically connected to each other, and two corrugated fins having twice the pitch of the wedge shape are arranged in the wedge-shaped recess.

With the above configuration, since there is a corrugated fin for each semiconductor, it is easy to transfer heat to the air, and after the wedge-shaped semiconductor and the corrugated fin are created separately, Since the thermoelectric device is mechanically formed, the corrugated fins can be freely formed. Therefore, the fin can be designed according to the heat transfer with the air, and the contact area with the wedge-shaped semiconductor can be secured to reduce the thermal resistance, suppress the temperature difference between the air and the semiconductor, and achieve high efficiency. Thermoelectric devices are possible.

Embodiment An embodiment according to the present invention will be described below with reference to the drawings.

FIG. 1 shows the configuration of a thermoelectric device according to an embodiment of the present invention.

In the figure, N-type semiconductors 17 and P-type semiconductors 18 are alternately joined in a wedge shape. Either the N-type semiconductor 17 or the P-type semiconductor 18 may be used, and the cooling unit and the heating unit can be switched depending on the direction of the applied voltage. The corrugated fins 19 made at the same pitch as the wedge are in contact with the convex portion of the wedge. Further, another corrugated fin 19 is in contact with the concave portion of the wedge. Since the semiconductors 17 and 18 and the corrugated fin 19 are mechanically joined to each other, the thermal resistance of the contact portion does not increase. As a material for the corrugated fins 19, copper or aluminum having high heat conductivity is used. The current flowing into the thermoelectric device generates or absorbs heat at the interface between the semiconductors 17 and 18 due to the Peltier effect. At this time, since the N-type semiconductor 17 and the P-type semiconductor 18 are lined up with each other, all the interfaces of the convex portions of the wedge generate heat (or endotherm) and all the interfaces of the concave portions absorb heat (or generate heat). Corrugated fins with high thermal conductivity at each interface
Transfers heat from the surrounding air via 19. Therefore, the heat is absorbed from the upper air (or the heat is dissipated to the air), and the heat is dissipated to the lower air (or the heat is absorbed from the air).

By using the thermoelectric device of this embodiment as a wall,
The heat pump inside and outside the wall is completed.

In this embodiment, the corrugated fins 19 have the same size on the upper and lower sides, but it can be said that the shape is easy to manufacture with the optimum size depending on the heat absorption / exhaust heat ratio and each air side condition.
Generally, the amount of waste heat is equal to the sum of the amount of heat absorbed and the input power, and if a thermoelectric element with low efficiency is used, the difference between the amount of heat absorbed and the amount of waste heat becomes large. Therefore, the difference in the heat transfer area required for heat transfer from the air side also becomes large. In this embodiment, the optimum shape can be easily obtained by changing the lengths of the heat absorbing side corrugated fins 19 and the heat exhausting side.

As described above, in the present embodiment, it is possible to freely and easily design the heat transfer surface on the air side, realize the heat absorption and the heat exhaustion between the thermoelectric element and the air with a low temperature difference, and improve the thermoelectric performance. Can be improved.

EFFECTS OF THE INVENTION As described above, a plate-shaped N-type (or P-type) semiconductor and a plate-shaped P-type (or N-type) semiconductor joined in a wedge shape are alternately used as the N-type semiconductor and the P-type semiconductor. 2 sets of wedge-shaped recesses that are electrically connected to each other so that they are positioned
Since the structure is such that two corrugated fins having a double pitch are arranged, a corrugated fin exists for each semiconductor, and heat transfer with air is easy,
Further, since the structure is such that the thermoelectric device is mechanically produced after the wedge-shaped semiconductor and the corrugated fin are separately produced, the shape of the corrugated fin can be freely produced. Therefore, the fan can be designed according to the heat transfer with the air, and the contact area with the wedge-shaped semiconductor can be secured, so the thermal resistance can be reduced, the temperature difference between the air and the semiconductor can be suppressed, and An efficient thermoelectric device is possible.

[Brief description of drawings]

FIG. 1 is a schematic view of a thermoelectric device according to an embodiment of the present invention, FIG. 2 is a perspective view of a conventional thermoelectric device, and FIG. 3 is a side view of the conventional thermoelectric device. 3, 4, 17, 18 ... Semiconductor, 19 ... Corrugated fin.

Continuation of the front page (56) References JP-A-63-163787 (JP, A) JP-A-63-189792 (JP, A) Jitsuko 42-9210 (JP, Y1)

Claims (1)

(57) [Claims] 1. A plate-shaped N-type (or P-type) semiconductor or a plate-shaped P-type (or N-type) semiconductor bonded in a wedge shape so that the N-type semiconductor and the P-type semiconductor are alternately located. A plurality of corrugated fins electrically connected to each other, and two corrugated fins having a pitch twice that of the wedge are arranged in the wedge-shaped recess.