JPH0640478Y2 - Thermoelectric generator using Zebeck element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION Industrial Field of the Invention In the present invention, an electromotive force is generated by forming a closed circuit in which two points are joined by a P-type semiconductor and an N-type semiconductor and giving a temperature difference to the two junction points. The present invention relates to a thermoelectric generator using a Seebeck element.

Problems to be Solved by the Related Art and Invention Conventionally, as such a thermoelectric generator, as shown in FIG. 3, one surface of a chip-shaped P-type semiconductor P and an N-type semiconductor N are separated from each other by metal pieces. The metal pieces b and b are connected to the other surfaces of the P-type semiconductor P and the N-type semiconductor N, respectively, and the metal pieces b are connected to each other via the load resistance R. A so-called bulk type in which a plurality of Zebek elements are connected in series, and one of the heat dissipation plate and the heat absorption plate is attached to the metal piece a on one side of the Zebek element and the other is attached to the metal piece b on the other side. However, since the voltage that can be extracted is generally low, it is necessary to connect a large number of devices in order to extract a large voltage, and in the conventional bulk type, it is necessary to reduce the semiconductor chip size. Because there are limits However, there is a drawback that the entire thermoelectric generator becomes large.

Therefore, with the development of film forming technology for semiconductors, a large number of film-shaped P-type semiconductors and N-type semiconductors are alternately connected in series in a zigzag pattern via metal films on a plane, and the metal films are connected. Attempts have been made to reduce the size of thermoelectric generators by forming Zebeck element rows each having a heat radiating terminal and a heat absorbing terminal, but the heat radiating terminals and heat absorbing terminals are scattered on one surface. Therefore, it is difficult to cool or heat each heat radiation terminal and each heat absorption terminal collectively,
The reality is that it has not yet been put to practical use.

Means for Solving the Problems The thermoelectric generator using the Seebeck element of the present invention has been completed in view of such circumstances, and includes a large number of film-like P-type semiconductors and N-type semiconductors. Are arranged in a grid pattern alternately located in the vertical direction and the horizontal direction, and the P-type semiconductor and the N-type semiconductor are connected in series in a zigzag pattern through the metal film, so that the metal film is vertically or horizontally aligned. Forming a sheet-like Seebeck element array that is alternately aligned as a heat-dissipating terminal and a heat-absorbing terminal in the direction, and disposing a heat-dissipating plate and a heat-absorbing plate on each heat-dissipating terminal array and each heat-absorbing terminal array on the front and back surfaces of the Zebek-element array. Separately, an insulating material is used.

The function and effect of the present invention With the above-mentioned configuration, when the heat sink is kept at a low temperature and the heat sink is kept at a high temperature, all the heat dissipation terminals radiate heat to the heat sink to keep the temperature low, and all the heat sink terminals are Is maintained at a high temperature by absorbing heat from the heat absorbing plate, a similar temperature difference is given to the two joints of each Seebeck element, a similar electromotive force is generated, and a voltage obtained by adding the output voltage of each Seebeck element is generated. It is possible to take out, so that each heat radiation terminal and each heat absorption terminal are separately arranged by aligning them, and heat is conducted to the heat radiation plate and heat absorption plate separately arranged on the front and back of the Seebeck element row, respectively. As a result, it becomes possible to manufacture a thermoelectric generator with a Zebek element in the form of a film,
As a result, there is an effect that it is possible to obtain a thermoelectric generator that is small and outputs a large voltage.

Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

In FIG. 1, reference numeral 1 denotes a substrate made of an insulating material such as glass or alumina. As shown in FIG. 1, a film-shaped P-type semiconductor P and N-type semiconductor N are formed on the surface of the substrate 1. , 6 rows vertically and 10 rows horizontally so that they are alternately located in both vertical and horizontal directions.
The P-type semiconductors P and the N-type semiconductors N are connected in a zigzag shape through the metal film 3 arranged and adhered in a grid pattern of rows, and the metal films 3 alternately absorb heat and the heat radiation terminals 3a. The terminal 3b is connected to a series of three Seebeck elements 2 arranged in a row and three Seebeck element rows 4 are connected in series, where the heat radiating terminals 3a and the heat absorbing terminals 3b are vertically aligned. Then, four heat radiation terminal rows 5a and three heat absorption terminal rows 5b are alternately formed, and lead wires 7 and 7 are connected to the first heat radiation terminal 3a on the front side and the last heat radiation terminal 3a on the other side. Has been done.

On the front surface side of the substrate 1, a heat dissipation plate 11a made of a metal having a high heat conductivity such as aluminum having four heat transfer ridges 12a corresponding to the above four heat dissipation terminal rows 5a formed on the lower surface, The heat transfer ridges 12a are placed against the heat radiating terminals 3a via the insulating plate 13 attached to the lower surface of the heat transfer ridges 12a, and are placed on the back surface of the substrate 1 corresponding to the three heat absorbing terminal rows 5b. A heat absorbing plate 1 made of the same metal as above with three heat transfer ridges 12b formed on the upper surface 1
The heat transfer ridges 12b are applied to the heat transfer terminal strips 1b so as to correspond to the lower surfaces of the heat absorption terminal rows 5b, and these are integrally connected.

The heat dissipation plate 11a and the heat absorption plate 11b are divided into a plurality of parts, respectively, and have a structure in which they are integrally coupled with each other with a highly elastic buffer material 15 interposed therebetween.
Has a higher linear expansion coefficient than the substrate 1,
a, the thermal expansion of the heat absorbing plate 11b is absorbed by the cushioning material 15, so that the heat transfer ridges 12a and 12b are always kept in correspondence with the heat radiating terminal row 5a and the heat absorbing terminal row 5b.

This embodiment has such a structure, and when the lower surface side is heated to keep the heat absorbing plate 11b at high temperature, all the heat absorbing terminals 3b absorb heat through the heat transfer ridges 12b and are maintained at high temperature. By keeping the heat radiating plate 11a on the upper surface at room temperature, all the heat radiating terminals 3a radiate heat through the heat transfer ridges 12a and are maintained at a relatively low temperature. Due to the temperature difference between the two junctions of the semiconductor P and the N-type semiconductor N, an electromotive force in the same direction is generated, and since a large number of Seebeck elements 2 are connected in series, a large output voltage from the lead wires 7 and 7. Taken out.

Further, by mounting a silicon solar cell on the surface of the heat absorbing plate 11b, it is possible to perform both photovoltaic power generation by the solar cell and thermoelectric power generation using the heat of sunlight.

If heat dissipation and heat absorption are reversed, an electromotive force in the opposite direction can be generated.

[Brief description of drawings]

FIG. 1 is an exploded perspective view of an embodiment of the present invention, FIG. 2 is a sectional view of the assembled state, and FIG. 3 is a perspective view of a conventional Zebek element. P: P-type semiconductor, N: N-type semiconductor, 1: Substrate, 2: Seebeck element, 3a: Heat dissipation terminal, 3b: Endothermic terminal, 4: Seebeck element row,
5a: heat radiation terminal row, 5b: heat absorption terminal row, 11a: heat radiation plate, 11b: heat absorption plate, 12a, 12b: heat transfer ridges, 13: insulating plate

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuhiko Kurachi 1 at 20 Kitakanzan, Otakamachi, Midori-ku, Nagoya, Aichi Chubu Electric Power Co., Inc. (56) Reference JP-A-58-6186 A) Actual development Sho 61-90261 (JP, U)

Claims (1)

[Scope of utility model registration request] 1. A large number of film-shaped P-type semiconductors and N-type semiconductors are arranged in a grid pattern alternately located in the vertical and horizontal directions, and the P-type semiconductors and the N-type semiconductors are formed into a metal film. By connecting in series in a zigzag pattern through the metal film, the metal film is alternately arranged in one of the vertical and horizontal directions to form a planar Zebeck element array arranged as a heat-dissipating terminal and a heat-absorbing terminal. A thermoelectric generator using a Seebeck element, characterized in that a heat radiating plate and a heat absorbing plate are respectively made to correspond to each of the heat radiating terminal lines and each of the heat absorbing terminal lines through an insulating material.