CN215496781U - Refrigeration chip and nanometer water ion generator - Google Patents
Refrigeration chip and nanometer water ion generator Download PDFInfo
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- CN215496781U CN215496781U CN202120996439.XU CN202120996439U CN215496781U CN 215496781 U CN215496781 U CN 215496781U CN 202120996439 U CN202120996439 U CN 202120996439U CN 215496781 U CN215496781 U CN 215496781U
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- 238000005057 refrigeration Methods 0.000 title claims abstract description 59
- RECVMTHOQWMYFX-UHFFFAOYSA-N oxygen(1+) dihydride Chemical compound [OH2+] RECVMTHOQWMYFX-UHFFFAOYSA-N 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 79
- 239000013078 crystal Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000017525 heat dissipation Effects 0.000 claims abstract description 61
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000005728 strengthening Methods 0.000 claims abstract description 6
- 230000005676 thermoelectric effect Effects 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000006386 neutralization reaction Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model discloses a refrigeration chip and a nanometer water ion generator, which have tight packaging, compact structure, difficult damage, high refrigeration efficiency and small size and can be applied to various scenes. A refrigeration chip is composed of a heat absorbing element, a heat dissipating element, a substrate, a pair of P-type semiconductor crystal grains and N-type semiconductor crystal grains. The P/N type semiconductor crystal grain is covered on one side of the substrate and is parallel to the plane of the substrate, so as to reduce the height of the refrigeration chip; the heat absorbing piece is electrically connected with the refrigerating end of the P/N type semiconductor crystal grain and used for acquiring the cold energy generated by the refrigerating end, and meanwhile, the part of the heat absorbing piece is embedded into the substrate or fixedly connected with the substrate and used for strengthening the firmness of the electric connection between the heat absorbing piece and the semiconductor crystal grain; the heat dissipation member is electrically connected with the heating end of the P/N type semiconductor crystal grain for obtaining the heat generated by the heating end, and the local part of the heat dissipation member is embedded into the substrate for strengthening the firmness of the electric connection between the heat dissipation member and the semiconductor crystal grain.
Description
Technical Field
The utility model relates to the field of manufacturing, packaging and application of chips, in particular to a refrigeration chip and a nanometer water ion generator.
Background
On the one hand, with the high integration of functions and algorithms, the power consumption and heat generation of the chip become larger and larger. On the other hand, as chip manufacturing processes are continuously upgraded, the size of chips is smaller and smaller. Conventional heat dissipation fins and other pure physical heat conduction and heat dissipation methods cannot meet the rapidly increasing chip heat dissipation requirements, and a miniaturized and efficient chip heat dissipation device is urgently needed. A Peltier (Peltier) refrigeration unit has been widely used for heat dissipation of a chip as a simple and easy-to-implement refrigeration method, but the following disadvantages still exist:
(1) the structural stability of the Peltier refrigerating unit is poor, and the defective rate of production is greatly increased because the semiconductor crystal grains are easy to break, fall off or fracture;
(2) the peltier refrigeration unit is large in size, dozens of pairs of thermoelectric crystal grains are generally needed, the peltier refrigeration unit has extremely high heat dissipation requirement, a special heat dissipation fin needs to be configured for the peltier refrigeration unit, the size of the peltier refrigeration unit is further increased, and therefore the application scene of the peltier refrigeration unit is greatly limited.
(3) The refrigerating unit has large resistance to heat conduction and electric conduction, low refrigerating efficiency, and increased production cost and electric energy consumption.
The refrigeration chip and the manufacturing method thereof can comprehensively solve the problems, the chip is ingenious in design and compact in structure, miniaturization of the appearance size is realized, refrigeration and heat dissipation efficiency is high, requirements of miniaturization and high-efficiency heat dissipation required by a chip heat dissipation device can be met, and the refrigeration chip can be used for a nanometer water ion generator.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a refrigeration chip and a nanometer water ion generator aiming at the defects of the prior art, wherein the refrigeration chip and the nanometer water ion generator utilize the Peltier thermoelectric effect to manufacture refrigeration quantity, and the refrigeration chip has stable structure, small size and low power consumption, and can be applied to various scenes needing cooling or condensation.
In order to solve the technical problems, the following technical scheme is adopted:
refrigeration chip includes:
the P/N type semiconductor crystal grains are composed of P type semiconductor crystal grains and N type semiconductor crystal grains, one end of each P/N type semiconductor crystal grain is a refrigerating end and used for obtaining cold energy at a temperature lower than the environment under the action of thermoelectric effect, and the other end of each P/N type semiconductor crystal grain is a heating end and used for obtaining heat energy at a temperature higher than the environment under the action of thermoelectric effect;
the P/N type semiconductor crystal grains are covered on one side of the substrate and are parallel to the plane of the substrate, so that the height of the refrigeration chip is reduced;
the heat absorbing piece is electrically connected with the refrigerating end of the P/N type semiconductor crystal grain and used for acquiring the cold energy generated by the refrigerating end, and meanwhile, the part of the heat absorbing piece is embedded into the substrate or fixedly connected with the substrate and used for strengthening the firmness of the electric connection between the heat absorbing piece and the semiconductor crystal grain.
Further, the heat absorbing member comprises a heat absorbing member base portion and a heat absorbing member thimble portion,
the cross-sectional area of the heat absorbing piece base part is larger than that of the heat absorbing piece thimble part, the heat absorbing piece base part is respectively electrically connected with the refrigerating end of the P/N type semiconductor crystal grain, and the heat absorbing piece thimble part is far away from the refrigerating end of the P/N type semiconductor crystal grain and is used for efficiently transmitting cold to a far end.
Further, a part of the base portion of the heat absorbing member is embedded in the substrate in a perpendicular manner or in a parallel manner to the substrate.
Further, when the part of the heat absorbing member base part is embedded into the substrate in a manner of being vertical to the substrate, the heat absorbing member thimble part and the heat absorbing member base part are arranged in parallel or vertically; when the part of the heat absorbing member base part is embedded into the substrate in a mode of being parallel to the substrate, the heat absorbing member thimble part and the heat absorbing member base part are arranged perpendicularly to each other.
The heat dissipation device further comprises a heat dissipation piece, wherein the heat dissipation piece is electrically connected with the heating end of the P/N type semiconductor crystal grain and used for acquiring heat generated by the heating end.
Further, the heat sink is composed of a pair of conductors, and the heat sink is used for providing power for the P/N type semiconductor crystal grain on one hand, and is used for conducting away or dissipating heat generated by the heating end of the P/N type semiconductor crystal grain on the other hand.
Furthermore, the heat dissipation member is partially embedded in the substrate and is fixedly connected with the substrate to strengthen the firmness of the electric connection between the heat dissipation member and the P/N type semiconductor crystal grain.
Furthermore, a heat dissipation layer is covered on the substrate to increase the heat dissipation area of the heat dissipation piece;
the base plate close to the periphery of the heat absorbing element or the heat radiating element is provided with a through hole groove which is used for heat insulation and heat radiation and preventing the neutralization of cold quantity and heat quantity.
Furthermore, the heat absorbing piece and the substrate are welded on the substrate through solder paste, so that the heat absorbing piece and the substrate are fixedly connected.
A nanometer water ion generator comprises the refrigeration chip.
Due to the adoption of the technical scheme, the method has the following beneficial effects:
the utility model relates to a refrigeration chip and a nanometer water ion generator, wherein a P/N type semiconductor crystal grain is covered on one side of a substrate and is parallel to the plane of the substrate, so that the height of the refrigeration chip is reduced; the heat absorbing piece is electrically connected with the refrigerating end of the P/N type semiconductor crystal grain and used for acquiring the refrigerating capacity generated by the refrigerating end, and meanwhile, the part of the heat absorbing piece is embedded into the substrate or fixedly connected with the substrate and used for strengthening the firmness of the electric connection between the heat absorbing piece and the semiconductor crystal grain; the heat dissipation member is electrically connected with the heating end of the P/N type semiconductor crystal grain and used for acquiring heat generated by the heating end, and meanwhile, the part of the heat dissipation member is embedded into the substrate and used for reinforcing the firmness of the electric connection between the heat dissipation member and the semiconductor crystal grain. The heat absorbing element and the heat radiating element play double roles of heat conduction and electricity conduction at the same time, so that the resistance of heat conduction and electricity conduction is reduced to the maximum extent, the working efficiency of the refrigeration chip is optimized, and a pair of P/N type thermoelectric crystal grains can achieve a better refrigeration effect.
The P-type semiconductor crystal grain is a semiconductor mainly based on positively charged hole conduction, and the N-type semiconductor crystal grain is a semiconductor with a free electron concentration much higher than a hole concentration. Under the action of thermoelectric effect, current flows between the N-type semiconductor crystal grain and the P-type semiconductor crystal grain, electron hole pairs are generated near the junction, the internal energy is reduced, the temperature is reduced, and heat is absorbed to the outside, namely the cold end. The other end is a hot end because the electron hole pairs are compounded, the internal energy is increased, the temperature is increased, and heat is released to the environment.
The substrate is further covered with a heat dissipation layer to increase the heat dissipation area of the heat dissipation part, so that heat dissipation is enhanced, the natural convection or radiation heat dissipation effect is enhanced to the maximum extent, and the refrigeration chip achieves the best refrigeration effect.
In addition, the P/N type semiconductor crystal grains are packaged on the substrate through normal temperature curing glue to protect and package the P/N type semiconductor crystal grains.
Drawings
The utility model will be further described with reference to the accompanying drawings in which:
fig. 1 is a schematic diagram of an embodiment of a refrigeration chip according to an embodiment of the utility model.
Fig. 2 is a schematic diagram of an embodiment of a refrigeration chip according to the embodiment of the utility model.
Fig. 3 is a third schematic diagram of an embodiment of a refrigeration chip according to the embodiment of the utility model.
In the figure: 1-a heat dissipation layer, 1A-a first heat dissipation layer, 2A-a second heat dissipation layer, 2-a substrate, 3-a heat dissipation member, 3A-a first heat dissipation member, 3B-a first heat dissipation member 4, a P/N type semiconductor crystal grain, a 4A-N type semiconductor crystal grain, a 4B-P type semiconductor crystal grain, 5-a hole groove, 6-a heat absorption member, 61-a heat absorption member thimble portion, and 62-a heat absorption member base portion.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood, however, that the description herein of specific embodiments is only intended to illustrate the utility model and not to limit the scope of the utility model. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example 1
As shown in fig. 1, the refrigeration chip includes:
a pair of P/N type semiconductor crystal grains 4, the P/N type semiconductor crystal grains 4 being composed of a P type semiconductor crystal grain 4B and an N type semiconductor crystal grain 4A, one end of the P/N type semiconductor crystal grain 4 being a refrigeration end for obtaining a temperature lower than the environment, i.e., refrigeration quantity, under the action of thermoelectric effect, and the other end being a heat generation end for obtaining a temperature higher than the environment, i.e., heat quantity, under the action of thermoelectric effect;
the P-type semiconductor crystal grain 4B is a semiconductor mainly based on positive hole conduction, is formed by doping trace 3-valent elements such as gallium, boron, antimony and the like into pure silicon and sintering in vacuum. The N-type semiconductor crystal grain 4A is a semiconductor with the concentration of free electrons far larger than that of holes, and is formed by doping trace 5-valent elements such as arsenic, phosphorus and the like into pure silicon and sintering in vacuum.
The P/N type semiconductor crystal grain 4 is packaged on the substrate 2 through normal temperature curing glue, and is used for protecting and packaging the P/N type semiconductor crystal grain 4 and preventing the P/N type semiconductor crystal grain from being broken, falling off, broken or corroded.
The substrate 2, the P/N type semiconductor crystal grain 4 is covered on one side of the substrate 2, and the P/N type semiconductor crystal grain 4 is parallel to the plane of the substrate 2 and is used for reducing the height of the refrigeration chip;
the heat absorbing piece 6 is electrically connected with the refrigerating end of the P/N type semiconductor crystal grain 4 and used for acquiring the refrigerating capacity generated by the refrigerating end, and meanwhile, the part of the heat absorbing piece 6 is embedded into the substrate 2 or fixedly connected with the substrate 2 and used for strengthening the firmness of the electric connection between the heat absorbing piece 6 and the semiconductor crystal grain.
The heat absorbing member 6 and the substrate 2 are soldered on the substrate 2 by solder paste, so that the heat absorbing member 6 and the substrate 2 are fixedly connected.
As an embodiment of the utility model, said heat absorbing member 6 comprises a heat absorbing member base portion 62 and a heat absorbing member thimble portion 61,
as an embodiment of the present invention, the cross-sectional area of the heat absorbing member base portion 62 is larger than the cross-sectional area of the heat absorbing member thimble portion 61, the heat absorbing member base portion 62 is electrically connected to the refrigeration ends of the P/N type semiconductor crystal grains 4, respectively, and the heat absorbing member thimble portion 61 is away from the refrigeration end of the P/N type semiconductor crystal grain 4 to efficiently transmit the refrigeration energy to the far end.
As an embodiment of the present invention, a part of the heat absorbing member base portion 62 is embedded in the substrate 2 in a perpendicular manner to the substrate 2.
Further, when a part of the heat absorbing member base portion 62 is embedded in the substrate 2 in a manner perpendicular to the substrate 2, the heat absorbing member thimble portion 61 and the heat absorbing member base portion 62 are disposed perpendicular to each other.
As an embodiment of the present invention, optionally, only a portion of the heat absorbing member 6 connected to the P-type semiconductor crystal grain 4B and the N-type semiconductor crystal grain 4A is made of a conductive material, and the rest is made of an insulating material with high thermal conductivity, such as ceramic.
As an embodiment of the present invention, the heat absorbing member 6 may be a sheet, a folded shape, a needle shape, or the like, so as to meet different application scenarios.
As an embodiment of the present invention, the refrigeration chip further includes a heat dissipation member 3, and the heat dissipation member 3 is electrically connected to the heat generating end of the P/N type semiconductor die 4 to obtain heat generated by the heat generating end.
As an embodiment of the present invention, the heat sink 3 is composed of a pair of conductors, and the heat sink 3 is used to provide power to the P/N type semiconductor die 4 on one hand and to conduct away or dissipate heat generated by the heat generating end of the P/N type semiconductor die 4 on the other hand.
As an embodiment of the present invention, a part of the heat sink 3 is embedded in the substrate 2 and is fixedly connected to the substrate 2, so as to enhance the reliability of the electrical connection between the heat sink 3 and the P/N type semiconductor die 4.
As an embodiment of the present invention, the heat radiating member 3 may be made as a separate and independent first heat radiating member 3A and second heat radiating member 3B.
As an embodiment of the present invention, the first heat dissipation element 3A and the second heat dissipation element 3B may also be integrally formed, and the materials between the first heat dissipation element and the second heat dissipation element are insulating materials, so that the first heat dissipation element and the second heat dissipation element are not electrically connected to each other, and thus, the number of refrigeration chip components is reduced and the refrigeration chip components are more integrated.
As an embodiment of the present invention, the heat sink 3 is sheet-shaped, and may also be folded, or in a shape of a sheet with a tie, so as to satisfy different application scenarios.
Further, the substrate 2 is further covered with a heat dissipation layer 1 to increase the heat dissipation area of the heat dissipation member 3. The heat dissipation effect of natural convection or radiation is strengthened to the maximum extent, so that the refrigeration chip achieves the best refrigeration effect.
As an embodiment of the present invention, the heat dissipation layer 1 is disposed on the front or back surface of the substrate 2, wherein the heat dissipation layer 1 may be disposed in two pieces, i.e., a first heat dissipation layer 1A and a second heat dissipation layer 1B, for manufacturing requirements.
The base plate 2 close to the heat absorbing part 6 or the heat radiating part 3 is provided with a through hole groove 5, and the hole groove 5 is used for heat insulation and heat radiation to prevent the neutralization of cold quantity and heat quantity.
Through actual measurement, due to the addition of the hole grooves 5, the bonding strength between the heat absorbing piece 6 or the heat radiating piece 3 and the semiconductor crystal grain is greatly increased, and the capacity of resisting external impact force is increased by 2-5 times.
Under the action of thermoelectric effect, current flows between the N-type semiconductor crystal grain 4A and the P-type semiconductor crystal grain 4B, electron hole pairs are generated near the junction, the internal energy is reduced, the temperature is reduced, and heat is absorbed to the outside, namely the cold end. The other end is a hot end because the electron hole pairs are compounded, the internal energy is increased, the temperature is increased, and heat is released to the environment.
The heat absorbing part 6 and the heat radiating part 3 play double roles of heat conduction and electricity conduction at the same time, so that the resistance of the heat conduction and the electricity conduction is reduced to the maximum extent, the loss in the heat conduction and the electricity conduction process is reduced to the maximum extent, the working efficiency of the refrigeration chip is improved, and a pair of P/N type thermoelectric crystal grains can achieve a better refrigeration effect.
A nanometer water ion generator comprises the refrigeration chip.
Example 2
The difference from example 1 is that: a part of the heat absorbing member base portion 62 is embedded in the substrate 2 in such a manner as to be perpendicular to the substrate 2. When a part of the heat absorbing member base portion 62 is embedded in the substrate 2 in a manner perpendicular to the substrate 2, the heat absorbing member thimble portion 61 and the heat absorbing member base portion 62 are arranged in parallel with each other.
Example 3
The differences from examples 1 and 2 are: a part of the heat absorbing member base portion 62 is embedded in the substrate 2 in parallel with the substrate 2. When the heat absorbing member base portion 62 is partially embedded in the substrate 2 in parallel with the substrate 2 or fixedly connected thereto, the heat absorbing member thimble portion 61 and the heat absorbing member base portion 62 are arranged perpendicular to each other. And a part of the heat absorbing member 6 and the substrate 2 are pasted with solder
And is welded on the substrate 2, so that the heat absorbing member 6 is fixedly connected with the substrate 2.
The above is only a specific embodiment of the present invention, but the technical features of the present invention are not limited thereto. Any simple changes, equivalent substitutions or modifications made on the basis of the present invention to solve the same technical problems and achieve the same technical effects are all covered in the protection scope of the present invention.
Claims (10)
1. Refrigeration chip includes:
the P/N type semiconductor crystal grains are composed of P type semiconductor crystal grains and N type semiconductor crystal grains, one end of each P/N type semiconductor crystal grain is a refrigerating end and used for obtaining cold energy at a temperature lower than the environment under the action of thermoelectric effect, and the other end of each P/N type semiconductor crystal grain is a heating end and used for obtaining heat energy at a temperature higher than the environment under the action of thermoelectric effect;
it is characterized by also comprising:
the P/N type semiconductor crystal grains are covered on one side of the substrate and are parallel to the plane of the substrate, so that the height of the refrigeration chip is reduced;
the heat absorbing piece is electrically connected with the refrigerating end of the P/N type semiconductor crystal grain and used for acquiring the cold energy generated by the refrigerating end, and meanwhile, the part of the heat absorbing piece is embedded into the substrate or fixedly connected with the substrate and used for strengthening the firmness of the electric connection between the heat absorbing piece and the semiconductor crystal grain.
2. The refrigeration chip of claim 1, wherein: the heat absorbing member comprises a heat absorbing member base portion and a heat absorbing member thimble portion,
the cross-sectional area of the heat absorbing piece base part is larger than that of the heat absorbing piece thimble part, the heat absorbing piece base part is respectively electrically connected with the refrigerating end of the P/N type semiconductor crystal grain, and the heat absorbing piece thimble part is far away from the refrigerating end of the P/N type semiconductor crystal grain and is used for efficiently transmitting cold to a far end.
3. The refrigeration chip of claim 2, wherein: a part of the base of the heat absorbing member is embedded in the substrate in a perpendicular manner or in a parallel manner.
4. The refrigeration chip of claim 2, wherein: when the part of the heat absorbing member base part is embedded into the substrate in a mode of being vertical to the substrate, the heat absorbing member thimble part and the heat absorbing member base part are arranged in parallel or vertically; when the part of the heat absorbing member base part is embedded into the substrate in a mode of being parallel to the substrate, the heat absorbing member thimble part and the heat absorbing member base part are arranged perpendicularly to each other.
5. The refrigeration chip of claim 1, wherein: the heat dissipation device is characterized by further comprising a heat dissipation piece, wherein the heat dissipation piece is electrically connected with the heating end of the P/N type semiconductor crystal grain and used for acquiring heat generated by the heating end.
6. The refrigeration chip of claim 5, wherein: the heat dissipation member is composed of a pair of conductors, and the heat dissipation member is used for providing power for the P/N type semiconductor crystal grains on one hand and conducting away or dissipating heat generated by the heating ends of the P/N type semiconductor crystal grains on the other hand.
7. The refrigeration chip of claim 5, wherein: the heat dissipation member is partially embedded into the substrate and is fixedly connected with the substrate, so that the firmness of the electric connection between the heat dissipation member and the P/N type semiconductor crystal grains is enhanced.
8. The refrigeration chip of claim 7, wherein: the substrate is also covered with a heat dissipation layer to increase the heat dissipation area of the heat dissipation piece;
the base plate close to the periphery of the heat absorbing element or the heat radiating element is provided with a through hole groove which is used for heat insulation and heat radiation and preventing the neutralization of cold quantity and heat quantity.
9. A refrigeration chip according to claim 1, wherein: the heat absorbing piece and the substrate are welded on the substrate through solder paste, so that the heat absorbing piece and the substrate are fixedly connected.
10. A nano water ionizer comprising the refrigeration chip as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120996439.XU CN215496781U (en) | 2021-05-11 | 2021-05-11 | Refrigeration chip and nanometer water ion generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120996439.XU CN215496781U (en) | 2021-05-11 | 2021-05-11 | Refrigeration chip and nanometer water ion generator |
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| Publication Number | Publication Date |
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| CN215496781U true CN215496781U (en) | 2022-01-11 |
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| CN202120996439.XU Active CN215496781U (en) | 2021-05-11 | 2021-05-11 | Refrigeration chip and nanometer water ion generator |
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- 2021-05-11 CN CN202120996439.XU patent/CN215496781U/en active Active
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