JPH0427707B2 - - Google Patents
Info
- Publication number
- JPH0427707B2 JPH0427707B2 JP55073519A JP7351980A JPH0427707B2 JP H0427707 B2 JPH0427707 B2 JP H0427707B2 JP 55073519 A JP55073519 A JP 55073519A JP 7351980 A JP7351980 A JP 7351980A JP H0427707 B2 JPH0427707 B2 JP H0427707B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- cmos
- region
- type
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000003071 parasitic effect Effects 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 238000009792 diffusion process Methods 0.000 claims 6
- 238000002955 isolation Methods 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- -1 Phosphorus ions Chemical class 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- 238000007796 conventional method Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7351980A JPS56169359A (en) | 1980-05-30 | 1980-05-30 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7351980A JPS56169359A (en) | 1980-05-30 | 1980-05-30 | Semiconductor integrated circuit device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58226204A Division JPS59188162A (ja) | 1983-11-29 | 1983-11-29 | 半導体集積回路装置 |
| JP8545890A Division JPH0316166A (ja) | 1990-03-31 | 1990-03-31 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56169359A JPS56169359A (en) | 1981-12-26 |
| JPH0427707B2 true JPH0427707B2 (US06818201-20041116-C00086.png) | 1992-05-12 |
Family
ID=13520567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7351980A Granted JPS56169359A (en) | 1980-05-30 | 1980-05-30 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56169359A (US06818201-20041116-C00086.png) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57206064A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor device and manufacturing method therefor |
| JPS57206063A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor substrate and manufacture therefor |
| JPS58170048A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
| JPS58182863A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 半導体装置 |
| JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6080267A (ja) * | 1983-10-07 | 1985-05-08 | Toshiba Corp | 半導体集積回路装置の製造方法 |
| JPH0622274B2 (ja) * | 1983-11-02 | 1994-03-23 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPS60101963A (ja) * | 1983-11-08 | 1985-06-06 | Iwatsu Electric Co Ltd | 相補型電界効果トランジスタの製造方法 |
| JPS60218866A (ja) * | 1984-04-13 | 1985-11-01 | Mitsubishi Electric Corp | 相補型ｍｏｓ半導体装置 |
| KR890004420B1 (ko) * | 1986-11-04 | 1989-11-03 | 삼성반도체통신 주식회사 | 반도체 바이 씨 모오스장치의 제조방법 |
| JPS6325964A (ja) * | 1987-02-13 | 1988-02-03 | Seiko Epson Corp | Ｃ−ｍｏｓ型半導体集積回路装置 |
| JP2689114B2 (ja) * | 1987-05-30 | 1997-12-10 | 株式会社リコー | 半導体集積回路装置の製造方法 |
-
1980
- 1980-05-30 JP JP7351980A patent/JPS56169359A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56169359A (en) | 1981-12-26 |
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