JPH0427685B2 - - Google Patents

Info

Publication number
JPH0427685B2
JPH0427685B2 JP58067032A JP6703283A JPH0427685B2 JP H0427685 B2 JPH0427685 B2 JP H0427685B2 JP 58067032 A JP58067032 A JP 58067032A JP 6703283 A JP6703283 A JP 6703283A JP H0427685 B2 JPH0427685 B2 JP H0427685B2
Authority
JP
Japan
Prior art keywords
film
gold
polyimide
resist
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58067032A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59193456A (ja
Inventor
Shuzo Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Shinku Gijutsu KK filed Critical Nihon Shinku Gijutsu KK
Priority to JP58067032A priority Critical patent/JPS59193456A/ja
Publication of JPS59193456A publication Critical patent/JPS59193456A/ja
Publication of JPH0427685B2 publication Critical patent/JPH0427685B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58067032A 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法 Granted JPS59193456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58067032A JPS59193456A (ja) 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58067032A JPS59193456A (ja) 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法

Publications (2)

Publication Number Publication Date
JPS59193456A JPS59193456A (ja) 1984-11-02
JPH0427685B2 true JPH0427685B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=13333125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58067032A Granted JPS59193456A (ja) 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法

Country Status (1)

Country Link
JP (1) JPS59193456A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101454934B1 (ko) * 2009-09-22 2014-10-28 현대자동차주식회사 가변 밸브 리프트 장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3697426B2 (ja) * 2002-04-24 2005-09-21 株式会社東芝 パターン形成方法および半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4963999A (enrdf_load_stackoverflow) * 1972-10-27 1974-06-20
DE2346719C3 (de) * 1973-09-17 1980-01-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Mehrschichtige Bestrahlungsmaske für die Röntgenstrahl-Fotolithografie
JPS52139375A (en) * 1976-05-18 1977-11-21 Toshiba Corp Mask for x-ray exposure
JPS54157277A (en) * 1978-06-01 1979-12-12 Nippon Electric Co Method of printed board for microwave

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101454934B1 (ko) * 2009-09-22 2014-10-28 현대자동차주식회사 가변 밸브 리프트 장치

Also Published As

Publication number Publication date
JPS59193456A (ja) 1984-11-02

Similar Documents

Publication Publication Date Title
DE69806873T2 (de) Elektronenstrahlresist
DE112010004884T5 (de) Verfahren für die Gerichtete Selbstorganisation und damit Hergestellte Schichtstrukturen
DE3625340A1 (de) Verfahren zum silizieren der oberflaeche einer polymer-membran und herstellungsverfahren zum bilden von mustern oder masken unter anwendung des silizierungsverfahrens
JPS60124940A (ja) 乾式ポジテイブ・ト−ンの微小パタ−ン形成方法
JPS6355208B2 (enrdf_load_stackoverflow)
DE2655455A1 (de) Strahlungsempfindliche lackstruktur und ihre verwendung
EP0222738A2 (de) Verfahren zur Herstellung einer Transmissionsmaske
JPS60214532A (ja) パタ−ン形成方法
US5669800A (en) Process of forming holes in a photosensitive resin layer to produce cathodes with microtips
DE68918177T2 (de) Feinstruktur-Herstellungsverfahren.
DE3600169A1 (de) Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren
CA1143483A (en) X-ray lithography at 100 d linewidths using x-ray masks fabricated by shadowing techniques
DE10219122B4 (de) Verfahren zur Herstellung von Hartmasken
JPH0427685B2 (enrdf_load_stackoverflow)
US5139922A (en) Method of making resist pattern
EP0044553A1 (de) Verfahren zum Herstellen von Reliefstrukturen aus Doppellackschichten für integrierte Halbleiterschaltungen, wobei zur Strukturierung hochenergetische Strahlung verwendet wird
JPH0427684B2 (enrdf_load_stackoverflow)
JPH0424854B2 (enrdf_load_stackoverflow)
JPS60230650A (ja) 微細パタ−ンの製作法
EP0104684B1 (de) Maske für die Mustererzeugung in Lackschichten mittels Röntgenstrahllithographie und Verfahren zu ihrer Herstellung
JPH0314172B2 (enrdf_load_stackoverflow)
JPS61190947A (ja) 微細パタ−ンの形成方法
JPH0374803B2 (enrdf_load_stackoverflow)
DE3884188T2 (de) Silikon enthaltenes negatives photoresistmaterial und dessen verwendung zum herstellen von gemusterten oberflächen.
JPS63254729A (ja) レジストパタ−ンの形成方法