JPH0424854B2 - - Google Patents

Info

Publication number
JPH0424854B2
JPH0424854B2 JP58067030A JP6703083A JPH0424854B2 JP H0424854 B2 JPH0424854 B2 JP H0424854B2 JP 58067030 A JP58067030 A JP 58067030A JP 6703083 A JP6703083 A JP 6703083A JP H0424854 B2 JPH0424854 B2 JP H0424854B2
Authority
JP
Japan
Prior art keywords
gold
resist
ray
composite material
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58067030A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59193454A (ja
Inventor
Shuzo Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Shinku Gijutsu KK filed Critical Nihon Shinku Gijutsu KK
Priority to JP58067030A priority Critical patent/JPS59193454A/ja
Publication of JPS59193454A publication Critical patent/JPS59193454A/ja
Publication of JPH0424854B2 publication Critical patent/JPH0424854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58067030A 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法 Granted JPS59193454A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58067030A JPS59193454A (ja) 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58067030A JPS59193454A (ja) 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法

Publications (2)

Publication Number Publication Date
JPS59193454A JPS59193454A (ja) 1984-11-02
JPH0424854B2 true JPH0424854B2 (enrdf_load_stackoverflow) 1992-04-28

Family

ID=13333069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58067030A Granted JPS59193454A (ja) 1983-04-18 1983-04-18 X線リソグラフイ−用マスクの製造法

Country Status (1)

Country Link
JP (1) JPS59193454A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100524811B1 (ko) * 1996-06-27 2006-01-27 주식회사 하이닉스반도체 반도체장치의미세패턴형성방법
JP3697426B2 (ja) * 2002-04-24 2005-09-21 株式会社東芝 パターン形成方法および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52173A (en) * 1975-06-23 1977-01-05 Toshiba Corp X-ray etching mask
JPS5299778A (en) * 1976-02-18 1977-08-22 Nec Corp Production of silicon mask for x-ray lithography
JPS52137666A (en) * 1976-05-13 1977-11-17 Tokyo Shibaura Electric Co Method of producing thick film circuit substrate

Also Published As

Publication number Publication date
JPS59193454A (ja) 1984-11-02

Similar Documents

Publication Publication Date Title
US3934057A (en) High sensitivity positive resist layers and mask formation process
JPS60229026A (ja) 電子デバイスの製造方法
JPH0376743B2 (enrdf_load_stackoverflow)
JPS60214532A (ja) パタ−ン形成方法
US5104479A (en) Resist material for energy beam lithography and method of using the same
US5139922A (en) Method of making resist pattern
JPH0424854B2 (enrdf_load_stackoverflow)
US4612270A (en) Two-layer negative resist
EP0057268A2 (en) Method of fabricating X-ray lithographic masks
JPS60254035A (ja) パタ−ン形成方法
JPH0427684B2 (enrdf_load_stackoverflow)
JPS60230650A (ja) 微細パタ−ンの製作法
JPH0427685B2 (enrdf_load_stackoverflow)
US5178975A (en) High resolution X-ray mask having high aspect ratio absorber patterns
JP3009068B2 (ja) X線マスク構造体及びその製造方法
JPS60119549A (ja) パタ−ン形成材料及びパタ−ン形成法
JPH02156244A (ja) パターン形成方法
Taylor et al. Self-assembly: its use in at-the-surface imaging schemes for microstructure fabrication in resist films
JP2633264B2 (ja) パターン形成方法
JPS6066432A (ja) 微細パタ−ン形成法
JPH0422260B2 (enrdf_load_stackoverflow)
JPH04269756A (ja) リフトオフ加工に適したレジスト膜
JPH0475647B2 (enrdf_load_stackoverflow)
JPS60254040A (ja) パタ−ン形成方法
JPH0340498B2 (enrdf_load_stackoverflow)