JPH0475647B2 - - Google Patents

Info

Publication number
JPH0475647B2
JPH0475647B2 JP59068456A JP6845684A JPH0475647B2 JP H0475647 B2 JPH0475647 B2 JP H0475647B2 JP 59068456 A JP59068456 A JP 59068456A JP 6845684 A JP6845684 A JP 6845684A JP H0475647 B2 JPH0475647 B2 JP H0475647B2
Authority
JP
Japan
Prior art keywords
substrate
thin film
pattern
molecular weight
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59068456A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60211939A (ja
Inventor
Akira Morinaka
Shigeru Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6845684A priority Critical patent/JPS60211939A/ja
Publication of JPS60211939A publication Critical patent/JPS60211939A/ja
Publication of JPH0475647B2 publication Critical patent/JPH0475647B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP6845684A 1984-04-06 1984-04-06 微細パタン形成法 Granted JPS60211939A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6845684A JPS60211939A (ja) 1984-04-06 1984-04-06 微細パタン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6845684A JPS60211939A (ja) 1984-04-06 1984-04-06 微細パタン形成法

Publications (2)

Publication Number Publication Date
JPS60211939A JPS60211939A (ja) 1985-10-24
JPH0475647B2 true JPH0475647B2 (enrdf_load_stackoverflow) 1992-12-01

Family

ID=13374213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6845684A Granted JPS60211939A (ja) 1984-04-06 1984-04-06 微細パタン形成法

Country Status (1)

Country Link
JP (1) JPS60211939A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221415B2 (ja) 2006-02-16 2009-02-12 株式会社東芝 磁気記録媒体の製造方法
JP4421582B2 (ja) 2006-08-15 2010-02-24 株式会社東芝 パターン形成方法
JP4445538B2 (ja) 2007-09-26 2010-04-07 株式会社東芝 パターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933971B2 (ja) * 1975-08-01 1984-08-20 株式会社日立製作所 回路パタ−ン形成方法及びその装置
JPS5711344A (en) * 1980-06-25 1982-01-21 Mitsubishi Electric Corp Dry developing method
JPS57157241A (en) * 1981-03-25 1982-09-28 Oki Electric Ind Co Ltd Formation of resist material and its pattern
JPS57162330A (en) * 1981-03-31 1982-10-06 Kazuyuki Sugita Dry formation of pattern or dry removal of resist pattern

Also Published As

Publication number Publication date
JPS60211939A (ja) 1985-10-24

Similar Documents

Publication Publication Date Title
US5989776A (en) Photoresist composition for extreme ultraviolet lithography
US3934057A (en) High sensitivity positive resist layers and mask formation process
EP0903637B1 (en) Electron beam resist
US4590149A (en) Method for fine pattern formation on a photoresist
US4604294A (en) Process for forming an organic thin film
US4386152A (en) Plasma developable electron resist process
US5071671A (en) Process for forming pattern films
US4704342A (en) Photomask having a patterned carbon light-blocking coating
US4543319A (en) Polystyrene-tetrathiafulvalene polymers as deep-ultraviolet mask material
US5139922A (en) Method of making resist pattern
JPH0475647B2 (enrdf_load_stackoverflow)
US5104481A (en) Method for fabricating laser generated I.C. masks
JPS62247356A (ja) アニオン性重合可能モノマ−の蒸着フオトレジストの製造方法およびその製品
US4027052A (en) Fabrication of iron oxide pattern
EP0113034B1 (en) A method for producing a resist image involving the use of polystyrene-tetrathiafulvalene polymer as a deep-ultraviolet printing mask
US4555460A (en) Mask for the formation of patterns in lacquer layers by means of X-ray lithography and method of manufacturing same
JPS5828571B2 (ja) 微細加工用レジスト形成方法
US4588675A (en) Method for fine pattern formation on a photoresist
EP1159649B1 (en) Electron beam resist
KR100258803B1 (ko) 반도체 소자의 미세 패턴 형성방법
JPS58214149A (ja) 微細パタ−ン形成方法
US8512937B2 (en) Lithographic dry development using optical absorption
JPS6048023B2 (ja) ポジ型レジスト
JPH0147009B2 (enrdf_load_stackoverflow)
JPS6363564B2 (enrdf_load_stackoverflow)