JPH0426788B2 - - Google Patents

Info

Publication number
JPH0426788B2
JPH0426788B2 JP1027417A JP2741789A JPH0426788B2 JP H0426788 B2 JPH0426788 B2 JP H0426788B2 JP 1027417 A JP1027417 A JP 1027417A JP 2741789 A JP2741789 A JP 2741789A JP H0426788 B2 JPH0426788 B2 JP H0426788B2
Authority
JP
Japan
Prior art keywords
groove
electrode
semiconductor memory
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1027417A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02354A (ja
Inventor
Hideo Sunami
Tokuo Kure
Yoshifumi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1027417A priority Critical patent/JPH02354A/ja
Publication of JPH02354A publication Critical patent/JPH02354A/ja
Publication of JPH0426788B2 publication Critical patent/JPH0426788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP1027417A 1989-02-08 1989-02-08 大規模半導体メモリ Granted JPH02354A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1027417A JPH02354A (ja) 1989-02-08 1989-02-08 大規模半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1027417A JPH02354A (ja) 1989-02-08 1989-02-08 大規模半導体メモリ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57018740A Division JPS58137245A (ja) 1982-02-10 1982-02-10 大規模半導体メモリ

Publications (2)

Publication Number Publication Date
JPH02354A JPH02354A (ja) 1990-01-05
JPH0426788B2 true JPH0426788B2 (enrdf_load_stackoverflow) 1992-05-08

Family

ID=12220517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1027417A Granted JPH02354A (ja) 1989-02-08 1989-02-08 大規模半導体メモリ

Country Status (1)

Country Link
JP (1) JPH02354A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2643860B2 (ja) * 1994-10-26 1997-08-20 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
JP2012134521A (ja) * 2001-05-21 2012-07-12 Renesas Electronics Corp 半導体記憶装置
KR100520600B1 (ko) * 2003-02-17 2005-10-10 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856266B2 (ja) * 1977-02-03 1983-12-14 テキサス インスツルメンツ インコ−ポレイテツド Ｍｏｓメモリ
JPS5511365A (en) * 1978-07-11 1980-01-26 Pioneer Electronic Corp Semiconductor memory
JPS5518005A (en) * 1978-07-25 1980-02-07 Toshiba Corp Mos-type dynamic memory
JPS5666065A (en) * 1979-11-01 1981-06-04 Mitsubishi Electric Corp Semiconductor memory unit

Also Published As

Publication number Publication date
JPH02354A (ja) 1990-01-05

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