JPH0424872B2 - - Google Patents

Info

Publication number
JPH0424872B2
JPH0424872B2 JP57008449A JP844982A JPH0424872B2 JP H0424872 B2 JPH0424872 B2 JP H0424872B2 JP 57008449 A JP57008449 A JP 57008449A JP 844982 A JP844982 A JP 844982A JP H0424872 B2 JPH0424872 B2 JP H0424872B2
Authority
JP
Japan
Prior art keywords
substrate
semiconductor layer
type
solid
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008449A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125976A (ja
Inventor
Hidetsugu Oda
Shinichi Teranishi
Yasuo Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008449A priority Critical patent/JPS58125976A/ja
Publication of JPS58125976A publication Critical patent/JPS58125976A/ja
Publication of JPH0424872B2 publication Critical patent/JPH0424872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57008449A 1982-01-22 1982-01-22 固体撮像素子 Granted JPS58125976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008449A JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008449A JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS58125976A JPS58125976A (ja) 1983-07-27
JPH0424872B2 true JPH0424872B2 (enrdf_load_stackoverflow) 1992-04-28

Family

ID=11693429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008449A Granted JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS58125976A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715981B2 (ja) * 1985-12-03 1995-02-22 松下電子工業株式会社 固体撮像装置
JPH073867B2 (ja) * 1985-12-03 1995-01-18 松下電子工業株式会社 固体撮像装置
JP2822393B2 (ja) * 1988-07-30 1998-11-11 ソニー株式会社 固体撮像装置及びその駆動方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160985A (en) * 1977-11-25 1979-07-10 Hewlett-Packard Company Photosensing arrays with improved spatial resolution
JPS5917581B2 (ja) * 1978-01-13 1984-04-21 株式会社東芝 固体撮像装置

Also Published As

Publication number Publication date
JPS58125976A (ja) 1983-07-27

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