JPH04242933A - 酸化膜形成方法 - Google Patents

酸化膜形成方法

Info

Publication number
JPH04242933A
JPH04242933A JP3010008A JP1000891A JPH04242933A JP H04242933 A JPH04242933 A JP H04242933A JP 3010008 A JP3010008 A JP 3010008A JP 1000891 A JP1000891 A JP 1000891A JP H04242933 A JPH04242933 A JP H04242933A
Authority
JP
Japan
Prior art keywords
oxide film
formation
forming
less
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3010008A
Other languages
English (en)
Other versions
JP3078853B2 (ja
Inventor
Tadahiro Omi
忠弘 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP03010008A priority Critical patent/JP3078853B2/ja
Priority to US08/081,370 priority patent/US5418017A/en
Priority to PCT/JP1991/001799 priority patent/WO1992012274A1/ja
Publication of JPH04242933A publication Critical patent/JPH04242933A/ja
Application granted granted Critical
Publication of JP3078853B2 publication Critical patent/JP3078853B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、酸化膜形成方法に係る
。
【０００２】
【従来の技術】従来、現在、半導体材料または金属材料
もしくは合金材料の表面への酸化膜の形成は、酸化性雰
囲気中において、その材料を、５００℃以上の温度に加
熱することにより行っていた。
【０００３】しかし、例えば、半導体基板上に、各種薄
膜を形成後、その各種薄膜の一部を取り除いて半導体基
板の表面を露出させ、該露出させた表面に酸化膜を形成
するような場合、薄膜の種類によっては４００℃以上に
基板を加熱することはできないことがある。また、４０
０℃以上の温度に加熱すると、半導体基板上に形成され
ている膜相互の反応が生じたりして膜の品質の低下をま
ねいてします。
【０００４】従って、４００℃以下の温度で高品質の酸
化物を形成することが可能な酸化膜形成方法が望まれて
いる。
【０００５】
【発明が解決しようとする課題】本発明は、４００℃以
下の低温で、高品質の酸化膜の形成が可能な酸化膜形成
方法を提供することを目的とする。
【０００６】
【課題を解決するための手段】上記課題を解決するため
の本発明の酸化膜形成方法は、半導体材料または金属材
料もしくは合金材料の表面に、運動エネルギーが９０ｅ
Ｖ以下の不活性ガスイオンを照射するとともに、酸素ガ
ス分子を供給することにより前記材料の酸化物薄膜を、
前記材料表面に形成することを特徴とする。
【０００７】
【作用】本発明方法は、例えば、Ａｒイオンで、金属表
面をたたくと、欠陥を生じないで表面の原子層を活性化
できる。２５ｅＶのイオンは表面の２〜３原子層内にと
どまるため表面にのみそのエネルギーを与える。そして
、実効的に金属表面の温度を上昇させることができる。 同時に酸素ガスを成膜室内に導入すると、酸素分子や放
電によって生じた酸素ラジカルが金属表面に吸着し、Ａ
ｒイオン照射により高温になった金属表面で金属と反応
を起こす。これにより金属の酸化が進行する。
【０００８】従って、基板温度を４００℃まで上昇させ
なくとも、例えば、１５０から２００℃でも５〜１０ｎ
ｍの金属酸化膜（例えば、Ｔａ２Ｏ５膜）を形成するこ
とができる。なお、照射するイオンのエネルギーを９０
ｅＶ以下に保てば下地にダメージを与えることはない。
【０００９】なお、このように、９０ｅＶ以下のイオン
を照射するための装置をしては、例えば、図１あるいは
図２に示すような装置を用い、Ｏ２ガスとＡｒガスとを
装置内に導入し、基板側の周波数を５０ＭＨｚ、ターゲ
ット側の周波数を２００ＭＨｚ、ＲＦパワーを１０〜５
０Ｗとし、１ｍＴｏｒｒ〜数１０ｍＴｏｒｒの雰囲気中
でプラズマを発生させて行えばよい。
【００１０】
【実施例】以下に本発明の実施例を説明する。
【００１１】（実施例１）本例では、図１に示す装置を
用い、Ｏ２ガスとＡｒガスとを装置内に導入し、基板側
の周波数を５０ＭＨｚ、ターゲット側の周波数を２００
ＭＨｚ、ＲＦパワーを２Ｗとし、１ｍＴｏｒｒ〜数１０
ｍＴｏｒｒの雰囲気中でプラズマを発生させて、Ｓｉウ
エハ表面に酸化膜を形成した。なお、Ｏ２ガスは１０−
３Ｔｏｒｒとした。
【００１２】Ｓｉウエハの温度を４００℃に保持し、５
ｎｍの酸化膜が形成されるまでの時間を測定したところ
、約３０分であった。
【００１３】一方、酸化を促進するＨＣｌを含んだ（Ｈ
Ｃｌ／Ｏ２）ガス中で、Ｓｉウエハを４００℃に保持し
、５ｎｍの酸化膜が形成されるまでの時間を測定したと
ころ約３万時間であった。
【００１４】
【発明の効果】本発明によれば、４００℃以下の低温で
、他の膜の品質を劣化させることなく酸化膜の形成が可
能となる。
【図面の簡単な説明】
【図１】　　本発明において用いる酸化膜形成装置例で
ある。
【図２】　　本発明において用いる酸化膜形成装置例で
ある。
【符号の説明】
２０２，２０４…電極、２０３…基板。

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】　　半導体材料または金属材料もしくは合
    金材料の表面に、運動エネルギーが９０ｅＶ以下の不活
    性ガスイオンを照射するとともに、酸素ガス分子を供給
    することにより前記材料の酸化物薄膜を、前記材料表面
    に形成することを特徴とする酸化膜形成方法。
JP03010008A 1991-01-01 1991-01-01 酸化膜形成方法 Expired - Fee Related JP3078853B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP03010008A JP3078853B2 (ja) 1991-01-01 1991-01-01 酸化膜形成方法
US08/081,370 US5418017A (en) 1991-01-01 1991-12-27 Method of forming oxide film
PCT/JP1991/001799 WO1992012274A1 (en) 1991-01-01 1991-12-27 Method of forming oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03010008A JP3078853B2 (ja) 1991-01-01 1991-01-01 酸化膜形成方法

Publications (2)

Publication Number Publication Date
JPH04242933A true JPH04242933A (ja) 1992-08-31
JP3078853B2 JP3078853B2 (ja) 2000-08-21

Family

ID=11738375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03010008A Expired - Fee Related JP3078853B2 (ja) 1991-01-01 1991-01-01 酸化膜形成方法

Country Status (3)

Country Link
US (1) US5418017A (ja)
JP (1) JP3078853B2 (ja)
WO (1) WO1992012274A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168212A (ja) * 1997-12-02 1999-06-22 Tadahiro Omi 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3351843B2 (ja) * 1993-02-24 2002-12-03 忠弘 大見 成膜方法
ES2061399B1 (es) * 1993-03-31 1995-06-16 Consejo Superior Investigacion Procedimiento para la obtencion de capas finas de oxidos mediante bombardeo ionico y el uso de precursores metalicos volatiles
US5965629A (en) * 1996-04-19 1999-10-12 Korea Institute Of Science And Technology Process for modifying surfaces of materials, and materials having surfaces modified thereby
US6162513A (en) * 1996-04-19 2000-12-19 Korea Institute Of Science And Technology Method for modifying metal surface
US6596399B2 (en) 2000-12-04 2003-07-22 Guardian Industries Corp. UV absorbing/reflecting silver oxide layer, and method of making same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212184A (ja) * 1985-07-09 1987-01-21 田中貴金属工業株式会社 石英板に銅をスパツタめつきする方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168212A (ja) * 1997-12-02 1999-06-22 Tadahiro Omi 半導体装置

Also Published As

Publication number Publication date
US5418017A (en) 1995-05-23
JP3078853B2 (ja) 2000-08-21
WO1992012274A1 (en) 1992-07-23

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