JPH0423824B2 - - Google Patents

Info

Publication number
JPH0423824B2
JPH0423824B2 JP12323083A JP12323083A JPH0423824B2 JP H0423824 B2 JPH0423824 B2 JP H0423824B2 JP 12323083 A JP12323083 A JP 12323083A JP 12323083 A JP12323083 A JP 12323083A JP H0423824 B2 JPH0423824 B2 JP H0423824B2
Authority
JP
Japan
Prior art keywords
electrode
film
resist film
tungsten
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12323083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6015920A (ja
Inventor
Shinji Okazaki
Osamu Suga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12323083A priority Critical patent/JPS6015920A/ja
Publication of JPS6015920A publication Critical patent/JPS6015920A/ja
Publication of JPH0423824B2 publication Critical patent/JPH0423824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Beam Exposure (AREA)
JP12323083A 1983-07-08 1983-07-08 半導体装置の製造方法 Granted JPS6015920A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12323083A JPS6015920A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12323083A JPS6015920A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6015920A JPS6015920A (ja) 1985-01-26
JPH0423824B2 true JPH0423824B2 (enrdf_load_stackoverflow) 1992-04-23

Family

ID=14855417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12323083A Granted JPS6015920A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6015920A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100296126B1 (ko) 1998-12-22 2001-08-07 박종섭 고집적 메모리 소자의 게이트전극 형성방법
KR100299386B1 (ko) 1998-12-28 2001-11-02 박종섭 반도체 소자의 게이트 전극 형성방법
JP3988342B2 (ja) 1998-12-29 2007-10-10 株式会社ハイニックスセミコンダクター 半導体素子のゲート電極形成方法

Also Published As

Publication number Publication date
JPS6015920A (ja) 1985-01-26

Similar Documents

Publication Publication Date Title
US20050040491A1 (en) Fuse stucture
JP3520114B2 (ja) 半導体装置の製造方法
JPH0645329A (ja) 高集積半導体装置およびその製造方法
US4487795A (en) Method of forming patterned conductor lines
JP3397663B2 (ja) 回路素子の製造方法
JP2001284352A (ja) 半導体装置及び半導体装置の製造方法
JPH0423824B2 (enrdf_load_stackoverflow)
JPH03180041A (ja) 半導体装置
US5641708A (en) Method for fabricating conductive structures in integrated circuits
JPH11163146A (ja) 集積回路
US5945739A (en) Semiconductor device having a conductor through an inter-level layer and a spin-on-glass in the inter-level layer with substantially planar upper surfaces of the conductor, the inter-level layer, and the spin-on-glass
JP2765133B2 (ja) 半導体装置の製造方法
US6068964A (en) Method for patterning an insulator film and installing a grounding pin through electron beam irradiation
JP3034538B2 (ja) 配線構造の形成方法
JPH08330249A (ja) 半導体装置の製造方法
JP3180333B2 (ja) 半導体記憶装置の製造方法
JP2738693B2 (ja) 微細パターン形成方法
KR0155787B1 (ko) 반도체 메모리장치의 매몰접촉창 형성방법
JP3395720B2 (ja) 半導体記憶装置のマスク構造及び半導体記憶装置の製造方法
JP2750164B2 (ja) メモリセルパターンの形成方法
JP3048919B2 (ja) 配線パターンの形成方
KR100372657B1 (ko) 반도체소자의콘택형성방법
JPH0845811A (ja) パターン形成方法およびそれを用いた半導体集積回路装置の製造方法
JPS59163838A (ja) 半導体装置の製造方法
JPS59181647A (ja) 半導体装置の製造方法