JPH0416012B2 - - Google Patents
Info
- Publication number
- JPH0416012B2 JPH0416012B2 JP26913885A JP26913885A JPH0416012B2 JP H0416012 B2 JPH0416012 B2 JP H0416012B2 JP 26913885 A JP26913885 A JP 26913885A JP 26913885 A JP26913885 A JP 26913885A JP H0416012 B2 JPH0416012 B2 JP H0416012B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- solution
- nozzle
- etching solution
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 47
- 239000000243 solution Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 150000003839 salts Chemical class 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- 239000003929 acidic solution Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims 2
- 239000007788 liquid Substances 0.000 description 17
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 230000002378 acidificating effect Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- -1 nitride carbides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FZIZEIAMIREUTN-UHFFFAOYSA-N azane;cerium(3+) Chemical compound N.[Ce+3] FZIZEIAMIREUTN-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60269138A JPS62128529A (ja) | 1985-11-29 | 1985-11-29 | パタ−ン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60269138A JPS62128529A (ja) | 1985-11-29 | 1985-11-29 | パタ−ン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62128529A JPS62128529A (ja) | 1987-06-10 |
JPH0416012B2 true JPH0416012B2 (enrdf_load_stackoverflow) | 1992-03-19 |
Family
ID=17468217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60269138A Granted JPS62128529A (ja) | 1985-11-29 | 1985-11-29 | パタ−ン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62128529A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04310705A (ja) * | 1991-04-10 | 1992-11-02 | Masao Moriyama | プラスチックペレットの製造装置 |
JP4488322B2 (ja) * | 2000-01-26 | 2010-06-23 | 大日本印刷株式会社 | フォトマスク製造用スピン処理装置 |
JP6969904B2 (ja) * | 2017-05-30 | 2021-11-24 | 株式会社エスケーエレクトロニクス | フォトマスクのウェットエッチング方法及びウェットエッチング装置 |
-
1985
- 1985-11-29 JP JP60269138A patent/JPS62128529A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62128529A (ja) | 1987-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2126567C1 (ru) | Состав разбавителя для смывания ненужного фоторезиста на пластине в процессе изготовления полупроводниковых устройств (варианты) и способ смывания ненужного фоторезиста (варианты) | |
JP2009081247A (ja) | ルテニウム膜のエッチング方法 | |
US5298117A (en) | Etching of copper-containing devices | |
JPH0416012B2 (enrdf_load_stackoverflow) | ||
JPH05114358A (ja) | シヤドウマスクの製造方法 | |
JP2689431B2 (ja) | 二酸化珪素膜の選択形成方法 | |
GB1294585A (en) | Improved photomasks and method of fabrication thereof | |
US5620558A (en) | Etching of copper-containing devices | |
JP3252236B2 (ja) | 位相シフトマスクの製造方法および位相シフトマスク用ブランクスの製造方法 | |
JPH04196425A (ja) | 薬液処理装置 | |
JPS5931975B2 (ja) | 反転マスクの製造方法 | |
JPS646449B2 (enrdf_load_stackoverflow) | ||
JPS63278057A (ja) | レジスト除去方法 | |
JPH08144075A (ja) | メタル上の異物の除去方法およびその装置 | |
JP2002131891A (ja) | フォトマスクの洗浄方法およびそれに用いられる洗浄液 | |
JPH05224219A (ja) | 薄膜のエッチング方法、液晶表示素子用基板の製造方法およびエッチング装置 | |
JP2875553B2 (ja) | 酸化還元反応発生の防止方法およびそれに使用する処理装置 | |
KR20010112086A (ko) | 반도체 장치의 제조 방법 | |
JP2001033982A (ja) | レジストパターンの形成方法 | |
JPS58132935A (ja) | 有機材料膜の除去方法 | |
JPS6365933B2 (enrdf_load_stackoverflow) | ||
SU391613A1 (ru) | Травитель для снятия пленок титана | |
JPS6332869B2 (enrdf_load_stackoverflow) | ||
JP2003010794A (ja) | 基板洗浄装置 | |
JPH04200007A (ja) | 金属電極の形成方法 |