JPS6332869B2 - - Google Patents

Info

Publication number

JPS6332869B2

JPS6332869B2 JP3670881A JP3670881A JPS6332869B2 JP S6332869 B2 JPS6332869 B2 JP S6332869B2 JP 3670881 A JP3670881 A JP 3670881A JP 3670881 A JP3670881 A JP 3670881A JP S6332869 B2 JPS6332869 B2 JP S6332869B2

Authority

JP

Japan

Prior art keywords

thin film

etching

resist

pattern

bso

Prior art date

1981-03-13

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
• Global Dossier
• Discuss

• 239000010409 thin film Substances 0.000 claims description 59
• 238000000034 method Methods 0.000 claims description 38
• 238000001312 dry etching Methods 0.000 claims description 16
• 238000000992 sputter etching Methods 0.000 claims description 7
• -1 bismuth oxide compound Chemical class 0.000 claims description 5
• 238000001020 plasma etching Methods 0.000 claims description 5
• 229910052797 bismuth Inorganic materials 0.000 claims description 3
• JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
• 229910000416 bismuth oxide Inorganic materials 0.000 claims description 3
• 238000005530 etching Methods 0.000 description 19
• 239000000463 material Substances 0.000 description 11
• 239000000758 substrate Substances 0.000 description 9
• 239000010410 layer Substances 0.000 description 5
• 229920002120 photoresistant polymer Polymers 0.000 description 4
• 239000000126 substance Substances 0.000 description 4
• 238000001039 wet etching Methods 0.000 description 4
• 230000000694 effects Effects 0.000 description 3
• 238000004544 sputter deposition Methods 0.000 description 3
• 239000002253 acid Substances 0.000 description 2
• 150000007513 acids Chemical class 0.000 description 2
• 230000015572 biosynthetic process Effects 0.000 description 2
• 230000007423 decrease Effects 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 239000010408 film Substances 0.000 description 2
• 238000010884 ion-beam technique Methods 0.000 description 2
• 150000002500 ions Chemical class 0.000 description 2
• 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
• 230000002378 acidificating effect Effects 0.000 description 1
• 230000002411 adverse Effects 0.000 description 1
• 238000003486 chemical etching Methods 0.000 description 1
• 238000010494 dissociation reaction Methods 0.000 description 1
• 230000005593 dissociations Effects 0.000 description 1
• 239000007788 liquid Substances 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 229910052751 metal Inorganic materials 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 230000003287 optical effect Effects 0.000 description 1
• CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical class [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 description 1
• 238000001259 photo etching Methods 0.000 description 1
• 239000002356 single layer Substances 0.000 description 1
• 238000009751 slip forming Methods 0.000 description 1
• 238000010897 surface acoustic wave method Methods 0.000 description 1