JPS57196589A - Manufacture of nonlinear element - Google Patents

Manufacture of nonlinear element

Info

Publication number
JPS57196589A
JPS57196589A JP56081372A JP8137281A JPS57196589A JP S57196589 A JPS57196589 A JP S57196589A JP 56081372 A JP56081372 A JP 56081372A JP 8137281 A JP8137281 A JP 8137281A JP S57196589 A JPS57196589 A JP S57196589A
Authority
JP
Japan
Prior art keywords
transparent substrate
zinc oxide
nonlinear element
sputtering
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56081372A
Other languages
Japanese (ja)
Inventor
Sunao Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56081372A priority Critical patent/JPS57196589A/en
Publication of JPS57196589A publication Critical patent/JPS57196589A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

PURPOSE:To obtain the MIM nonlinear element having a microscopic area by a method wherein, using a transparent substrate, the element is exposed from the back side of the transparent substrate using one of the metal electrodes of the MIM (metal-insulating material-metal) nonlinear element, and a liftoff method is cojointly used. CONSTITUTION:After a tantalum thin film 6 has been formed on a transparent substrate 5 such as Pyrex glass and the like using a sputtering method, it is patterned into the prescribed shape, anodized in aqueous citric acid solution, and an oxide film 7 is formed on the surface of the tantalum thin film 6. Then, zinc oxide is formed by performing sputtering or evaporation, and photoresist 9 is applied. An exposing process is performed from the back side of the transparent substrate 5 maintaining the above condition, and the zinc oxide layer 8 is etched. Then, tantalum thin films 10 and 10' are formed by sputtering, an etching is performed on the zinc oxide layer 8, and the photoresist 9 and the tantalum 10' are removed.
JP56081372A 1981-05-28 1981-05-28 Manufacture of nonlinear element Pending JPS57196589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56081372A JPS57196589A (en) 1981-05-28 1981-05-28 Manufacture of nonlinear element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56081372A JPS57196589A (en) 1981-05-28 1981-05-28 Manufacture of nonlinear element

Publications (1)

Publication Number Publication Date
JPS57196589A true JPS57196589A (en) 1982-12-02

Family

ID=13744468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56081372A Pending JPS57196589A (en) 1981-05-28 1981-05-28 Manufacture of nonlinear element

Country Status (1)

Country Link
JP (1) JPS57196589A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027178A (en) * 1983-07-22 1985-02-12 Seiko Epson Corp Josephson effect element and manufacture thereof
JPS60156051A (en) * 1984-01-25 1985-08-16 Seiko Epson Corp Light valve
JPS61162048A (en) * 1985-01-10 1986-07-22 Fujitsu Ltd Production of liquid crystal display device
EP0255850A2 (en) * 1986-08-07 1988-02-17 VDO Adolf Schindling AG Liquid-crystal cell
KR100452331B1 (en) * 2002-10-15 2004-10-12 한국전자통신연구원 Mim emitter of field emitter device and method for fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471999A (en) * 1977-11-19 1979-06-08 Rikagaku Kenkyusho Josephson effect element and method of fabricating same
JPS55161273A (en) * 1979-05-30 1980-12-15 Northern Telecom Ltd Liquid crystal display unit and producing same
JPS5646584A (en) * 1979-09-26 1981-04-27 Hitachi Ltd Multilayer thin film functional element and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471999A (en) * 1977-11-19 1979-06-08 Rikagaku Kenkyusho Josephson effect element and method of fabricating same
JPS55161273A (en) * 1979-05-30 1980-12-15 Northern Telecom Ltd Liquid crystal display unit and producing same
JPS5646584A (en) * 1979-09-26 1981-04-27 Hitachi Ltd Multilayer thin film functional element and manufacture thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027178A (en) * 1983-07-22 1985-02-12 Seiko Epson Corp Josephson effect element and manufacture thereof
JPH0546112B2 (en) * 1983-07-22 1993-07-13 Seiko Epson Corp
JPS60156051A (en) * 1984-01-25 1985-08-16 Seiko Epson Corp Light valve
JPS61162048A (en) * 1985-01-10 1986-07-22 Fujitsu Ltd Production of liquid crystal display device
EP0255850A2 (en) * 1986-08-07 1988-02-17 VDO Adolf Schindling AG Liquid-crystal cell
EP0255850A3 (en) * 1986-08-07 1989-07-19 VDO Adolf Schindling AG Liquid-crystal cell
KR100452331B1 (en) * 2002-10-15 2004-10-12 한국전자통신연구원 Mim emitter of field emitter device and method for fabricating the same

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