JPS6027178A - Josephson effect element and manufacture thereof - Google Patents
Josephson effect element and manufacture thereofInfo
- Publication number
- JPS6027178A JPS6027178A JP58134193A JP13419383A JPS6027178A JP S6027178 A JPS6027178 A JP S6027178A JP 58134193 A JP58134193 A JP 58134193A JP 13419383 A JP13419383 A JP 13419383A JP S6027178 A JPS6027178 A JP S6027178A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- superconductor
- josephson
- junction
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はジョセフソン効果素子の構造とその製造方法に
関する、
従来ジョセフソン効果素子は、第１図に示すごとき構造
より成るのが通例である。す力わち、絶縁基板１の表面
には第１の超電導膜による配線２、その上の一部に形成
した酸化膜からなるジョセフソン接合３、該ジョセフソ
ン接合３上と基板１上に第２の超電導膜による配線４が
形成されて成るのが通例であ−た。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a structure of a Josephson effect element and a method of manufacturing the same.A conventional Josephson effect element usually has a structure as shown in FIG. That is, on the surface of the insulating substrate 1, there is a wiring 2 made of a first superconducting film, a Josephson junction 3 made of an oxide film formed on a part of the wiring 2, and a second wiring 2 on the Josephson junction 3 and on the substrate 1. Usually, the wiring 4 is formed of two superconducting films.
しかし、上記従来技術によると、ジョセフソン接合部の
電気容量が太キく、必ずしも高速動作ができないという
欠点があった。However, according to the above-mentioned conventional technology, the electric capacity of the Josephson junction is large, and high-speed operation is not necessarily possible.
本発明はかかる従来技術の欠点をなくし、より高速動作
が可能なジョセフソン効果素子の構造とその製造方法を
提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art and to provide a structure of a Josephson effect element that can operate at higher speeds and a method for manufacturing the same.
上記目的を達成するための本発明の基本的な構成は、ジ
ョセフソン効果素子に於て、絶縁基板上には超電導体配
線が形成され、該超電導膜配線の側面にジョセフソン接
合が形成されて成ることを特徴とすること、及びジョセ
フソン素子の製造方法に於て、絶縁基板−ヒには第１の
超電導体配線が形成され、該第１の超電導体配線表面に
薄い酸化膜を形成し、該酸化膜表面に筆２の超電導体膜
を形成後、前＝ｅ第１の超電導体配線上に第２の超電導
体膜と、第２の超電導体膜の配線とし７ての不要部分を
図形状に除去量ることによね、第１の超電。The basic structure of the present invention for achieving the above object is that, in a Josephson effect element, a superconductor wiring is formed on an insulating substrate, and a Josephson junction is formed on the side surface of the superconducting film wiring. In the Josephson device manufacturing method, a first superconductor wiring is formed on the insulating substrate, and a thin oxide film is formed on the surface of the first superconductor wiring. , After forming the superconductor film of brush 2 on the surface of the oxide film, a second superconductor film is formed on the first superconductor wiring, and an unnecessary part 7 is removed as the wiring of the second superconductor film. By removing the amount in the figure, the first superelectric.
導体配線側面と第２の超電導体配線側面の接合部πｆｉ
ｆｌ 肥酸化嘩をＳンヨ七フソン接合素子として形成し
て成ることを特徴とする。Joint portion πfi between the conductor wiring side surface and the second superconductor wiring side surface
It is characterized in that it is formed by forming a fertilizing layer as a ferrous oxide junction element.
以下、実施例により本発明を詳述する、第２図は本発明
の実施例を示すジョセフソン効果素子の断面図である。Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 2 is a sectional view of a Josephson effect element showing an example of the present invention.
すなわち、絶縁基板１１０表面には第１の超電導膜１２
と第２の超電導膜１４との側面における接合部にジョセ
フノン接合１３が形成されて成る。That is, the first superconducting film 12 is formed on the surface of the insulating substrate 110.
A Joseph non junction 13 is formed at the side surface junction between the superconducting film 14 and the second superconducting film 14.
第３図乃至第５図は本発明によるジョセフソン効果素子
の製造方法を示す工程毎の断面図である。3 to 5 are cross-sectional views showing each step of the method for manufacturing a Josephson effect element according to the present invention.
すなわち、絶縁基板２１の表面にけ熾１の超電導体膜２
２を形成後、ホト−エツチングにより図形状となし、そ
の表面を酸化処理によりｚｏＡｓ度の酸化膜２３を形成
後、第２の超電導体膜２４を表面に形成後、表面が平坦
になるようにホト・レジスト膜２６を塗布し、ホト・リ
ゾグラフィー処理により図形処理し、イオン・エツチン
グで表面を全面エッチすることによｈ第５図の如く超電
導体配線２５．２７ＶＣ挾まれたジョセフソン接合２６
が形成される。That is, a superconductor film 2 of a thickness 1 is formed on the surface of an insulating substrate 21.
After forming the superconductor film 2, a figure shape is formed by photo-etching, and the surface is oxidized to form an oxide film 23 of zoAs degree.After forming a second superconductor film 24 on the surface, the surface is made flat. By applying a photoresist film 26, processing the pattern by photolithography, and etching the entire surface by ion etching, the Josephson junction 26 with superconductor wiring 25.
is formed.
本発明のごとく、ンヨセフンン接合を極めて小さい面積
で縦型に形成することにより、ジョセフソン集積回路の
集積度の向上や接合容量減少による動作速度の向上を計
ることができる効果がある。By forming the vertical junction in an extremely small area as in the present invention, it is possible to improve the degree of integration of the Josephson integrated circuit and to improve the operating speed by reducing the junction capacitance.
第１図は従来技術によるジョセフソン効果素子の断面図
、第２図は本発明によるジョセフソン効果素子の断面図
、第６図乃至第５図は本発明によるジョセフソン効果素
子の製造方法を示す断面図である。
１、１１．２１ ・・・・・・基板
２、／１．１２，１４，２２，２４，２５．２７川山超
電導体膜
３．１３，２３．２６ ・・・・・薄い酸化膜あるいけ
ジョセフノン接合
２６・・・・・・レジスト膜
以 上
出願人 株式会社 諏訪精工舎
第１１
第２図FIG. 1 is a sectional view of a Josephson effect device according to the prior art, FIG. 2 is a sectional view of a Josephson effect device according to the present invention, and FIGS. 6 to 5 show a method of manufacturing a Josephson effect device according to the present invention. FIG. 1, 11.21 ...... Substrate 2, /1.12, 14, 22, 24, 25.27 Kawayama superconductor film 3.13, 23.26 ... Thin oxide film Joseph non-junction 26... Resist film or above Applicant Suwa Seikosha Co., Ltd. No. 11 Figure 2
Claims (2)
電導膜配線の側面にジョセフソン接合が形成されて成る
ことを特徴とするジョセフソン効果素子。(1) A Josephson effect element characterized in that: a superconductor wiring is formed on an insulating substrate, and a Josephson junction is formed on the side surface of the superconducting film wiring.
れ、該第１の超電導体配線表面に薄い酸化膜を形成し、
該酸化膜表面にｖ、２の超電導体膜を形成後、前記第１
の超電、導体配線上の第２の超電導体膜と、第２の超電
導体膜の配線としての不要部分を図形状に除去すること
により、第１の超電導体配線側面と第２の超電導体配線
側面の接合部に前記酸化膜をジョセフソン接合素子とし
て形成して成ることを特徴とするジョセフソン素子の製
造方法、(2) On the insulating substrate VC, a superconductor wiring of Chiku 1 is formed, and a thin oxide film is formed on the surface of the first superconductor wiring,
After forming a superconductor film of v, 2 on the surface of the oxide film, the first
By removing the second superconductor film on the conductor wiring and unnecessary parts of the second superconductor film as wiring in a figure shape, the side surface of the first superconductor wiring and the second superconductor are removed. A method for manufacturing a Josephson element, characterized in that the oxide film is formed as a Josephson junction element at a junction on a side surface of a wiring;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58134193A JPS6027178A (en) | 1983-07-22 | 1983-07-22 | Josephson effect element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58134193A JPS6027178A (en) | 1983-07-22 | 1983-07-22 | Josephson effect element and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6027178A true JPS6027178A (en) | 1985-02-12 |
| JPH0546112B2 JPH0546112B2 (en) | 1993-07-13 |
Family
ID=15122604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58134193A Granted JPS6027178A (en) | 1983-07-22 | 1983-07-22 | Josephson effect element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027178A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5471999A (en) * | 1977-11-19 | 1979-06-08 | Rikagaku Kenkyusho | Josephson effect element and method of fabricating same |
| JPS57196589A (en) * | 1981-05-28 | 1982-12-02 | Seiko Epson Corp | Manufacture of nonlinear element |
| JPS59182586A (en) * | 1983-04-01 | 1984-10-17 | Nippon Telegr & Teleph Corp <Ntt> | Josephson junction element |
-
1983
- 1983-07-22 JP JP58134193A patent/JPS6027178A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5471999A (en) * | 1977-11-19 | 1979-06-08 | Rikagaku Kenkyusho | Josephson effect element and method of fabricating same |
| JPS57196589A (en) * | 1981-05-28 | 1982-12-02 | Seiko Epson Corp | Manufacture of nonlinear element |
| JPS59182586A (en) * | 1983-04-01 | 1984-10-17 | Nippon Telegr & Teleph Corp <Ntt> | Josephson junction element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546112B2 (en) | 1993-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6027178A (en) | Josephson effect element and manufacture thereof | |
| JPS6146081A (en) | Manufacture of josephson junction element | |
| JPH02222574A (en) | Semiconductor device | |
| KR0180116B1 (en) | Forming method of metal wiring in semiconductor device | |
| JPH053754B2 (en) | ||
| JPS61140184A (en) | Manufacture of josephson ic | |
| JPS6215868A (en) | Manufacture of contact for integrated circuit | |
| JPS62112359A (en) | Manufacture of semiconductor device | |
| JPS6130422B2 (en) | ||
| KR940000312B1 (en) | Sram having a resistance resistor and fabricating method thereof | |
| JPH01191445A (en) | Manufacture of semiconductor device | |
| JPS6358873A (en) | Semiconductor device and manufacture thereof | |
| JPH0223674A (en) | Connection of wiring | |
| JPS58191450A (en) | Multilayer wiring structure | |
| JPS61230341A (en) | Manufacture of semiconductor device | |
| JPH05183060A (en) | Semiconductor integrated circuit | |
| JPS6384140A (en) | Semiconductor integrated circuit device | |
| JPH02105529A (en) | Manufacture of semiconductor device | |
| JPH02192175A (en) | Formation of superconductor pattern | |
| JPH0335570A (en) | Quasi-plane josephson junction | |
| JPH0680659B2 (en) | Wiring structure for semiconductor device and manufacturing method thereof | |
| JPS58176963A (en) | Semiconductor device | |
| JPH06196669A (en) | Master-slice type semiconductor integrated circuit device and it manufacture | |
| JPH02296332A (en) | Manufacture of semiconductor device | |
| JPS6046049A (en) | Manufacture of semiconductor device |