JPS59182586A - Josephson junction element - Google Patents

Josephson junction element

Info

Publication number
JPS59182586A
JPS59182586A JP58055224A JP5522483A JPS59182586A JP S59182586 A JPS59182586 A JP S59182586A JP 58055224 A JP58055224 A JP 58055224A JP 5522483 A JP5522483 A JP 5522483A JP S59182586 A JPS59182586 A JP S59182586A
Authority
JP
Japan
Prior art keywords
thin film
electrodes
thickness
electrode
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58055224A
Other languages
Japanese (ja)
Inventor
Akira Ishida
晶 石田
Kazutake Matsumoto
松本 和健
Katsuyoshi Hamazaki
浜崎 勝義
Tsutomu Yamashita
努 山下
Shokichiro Yoshikawa
吉川 昭吉郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58055224A priority Critical patent/JPS59182586A/en
Publication of JPS59182586A publication Critical patent/JPS59182586A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To obtain the excellent characteristics of element with good reproducibility without necessitating a special technique for forming fine patterns by a method wherein the junction length, thickness, etc. of the junction part which requires micro dimensions are determined by the thicknesses of an insulation thin film and a conductive thin film. CONSTITUTION:The first and second electrodes 1 and 2 made of superconductive thin films processed into desired shapes are formed in a Josephson element, said electrodes 1 and 2 are arranged in the same plane, and a thin film 5 composed of an insulation layer of the thickness L is formed on the surface of the end surface of the electrode 1. The conductive thin film 6 is formed on the planes of the electrodes 1 and 2, and the thin film 5 is sandwiched between both surfaces opposed to each other of the electrodes 1 and 2. The thickness L of the thin film 5 corresponding to this junction length is selected approximately to the coherent length of the superconductive material of which the electrodes 1 and 2 are formed, and said material of the thickness (t) of approximate coherent length is used as the material of said film 6. Thus, excellent characteristics of element are realized with good reproducibility without necessitating the special technique for forming fine patterns.

Description

【発明の詳細な説明】 本発明はジョセフソン接合素子、とくに、平面ブリッジ
形ジョセフソン接合素子の構造に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of a Josephson junction device, particularly a planar bridge type Josephson junction device.

従来、この棟平面ブリッジ形ジョセフソン接合素子とし
ては、たとえば第1図に示す如く、所定の膜厚の超伝導
薄膜ンH字形に加工して第1及び第2の電極部/、2と
幅Wでなるブリッジ部3を形成し、さらにブリッジ部3
において、膜厚tを有する残余の部分を残して幅Lケ有
する溝を形成した接合部≠が構成され接合長をし、接合
部をtとするものが提案されている二この構成によるジ
ョセフソン接合素子は接合長りおよび接合部!を超伝導
薄膜のコヒーレント長と呼ばれる寸法程度の極微寸法に
選ぶことにより弱結合形ジョセフソン接合素子として作
用するものであるが、電子線露光法等の特別な加工技術
を適用して、’e / Onm程度の寸法を精度よく実
飄、する必要があった・しかも、素子特性のばらつきは
この寸法精度にきわめて敏感であるため、索子を再現性
よく製作するには、数11m以下の尚精度を要するか、
電子緑露光技術を駆使してもこの精度を得るのはきわめ
て困難であり、特性のそろった索子を得ることが困難で
あった。
Conventionally, as shown in FIG. 1, for example, as shown in FIG. A bridge portion 3 made of W is formed, and the bridge portion 3
In 2003, it was proposed that a joint part ≠ is formed in which a groove having a width L is formed, leaving the remaining part having a film thickness t, and the joint length is t, and the joint part is t. The joining element is the joining length and the joining part! It acts as a weakly coupled Josephson junction element by selecting an extremely small dimension called the coherent length of a superconducting thin film, but by applying special processing techniques such as electron beam exposure, 'e / It was necessary to accurately produce the actual dimensions of about 1000 nm. Moreover, variations in element characteristics are extremely sensitive to this dimensional accuracy, so in order to manufacture the cord with good reproducibility, it was necessary to precisely produce the dimensions of several 11 m or less. Does it require precision?
Even with the use of electronic green exposure technology, it is extremely difficult to achieve this level of precision, and it has been difficult to obtain cords with uniform characteristics.

本発明は、この極微寸法を擬する接合部の構造を改善し
て、特別な微細パターン形成技術な心安とせず、すぐれ
た索子特性が再現性よ(蒔りれるジョセフソン埃会素子
の新しい構造を提条するものである。
The present invention improves the structure of the joint that simulates this ultra-fine dimension, and achieves excellent cable characteristics with reproducibility (a new technology for Josephson dust elements that can be sown) without relying on special fine pattern forming technology. It proposes a structure.

第2図は、本発明の実施例で、同図において本発明によ
るジョセフノン接合糸子は、所望の形状に加工された超
伝導薄膜からなる第1及び第2のt極ハノ、上記第1の
電極の端面表面に形成された厚みLの絶a層でなる薄膜
j、8よび厚みtの導電性薄膜6より成り、上記第1お
よび第2の電極/、2が同一平面上におかれ、上記第1
および第2の電極ハ 2の相対向する一対の端面同志で
以って上記絶縁層でなる薄膜jがはさまれ、上記絶縁1
層でなる薄膜5を含む第1?よび第2の電極l・コの上
部表面に上記4電性薄朕6が配され、上記絶縁層でなる
薄膜5の上部において上記4電性薄膜6で以って第l及
び第2の電極ハ2が電気的に接続されて接合部≠が構成
されている。
FIG. 2 shows an embodiment of the present invention, in which the Josephnon bonded thread according to the present invention has first and second t-pole wires made of a superconducting thin film processed into a desired shape, and the above-mentioned first It consists of a thin film j, 8 made of an a-layer with a thickness L formed on the end surface of the electrode, and a conductive thin film 6 with a thickness t, and the first and second electrodes /, 2 are placed on the same plane, 1st above
A thin film j made of the above insulating layer is sandwiched between a pair of opposing end faces of the second electrode C2, and the above insulating layer
A first layer comprising a thin film 5 consisting of layers? The above-mentioned 4-conductor thin film 6 is disposed on the upper surface of the 1st and 2nd electrodes 1 and 2, and the 1st and 2nd electrodes are formed by the above-mentioned 4-conductivity thin film 6 on the top of the thin film 5 made of the above-mentioned insulating layer. C2 is electrically connected to form a joint ≠.

上記構成において、接合長に相当する絶縁層でなる薄膜
jの厚みLを第1及び第1の電極7.2を形成する超伝
導材料のコヒーレントa程度に選び、かつ、上記導電性
薄膜6の材料として4ヒ一レント長8度の厚み1(接合
部に相当する)の超伝導材料を用いれば、上記第1及び
第2の延極へコが超伝導的に弱く結合され、いわゆる平
面ブリッジ形あるいはs−s’−s形の弱結合形ジョセ
フソン接合糸子として作用するものである。また、上記
尋電性薄膜乙の材料として常伝導霊属あるいは半導体材
料等の導電性材料を用いても、上記第1及び第2の電極
/、2が超伝導的に弱(結合され、いわゆる5−N−8
形の弱結合形ジョセフノン素子として作用することは言
うまでもない。この時導電性材料でなる膜厚はコヒーレ
ント長には限定されずより厚くとも良い。
In the above configuration, the thickness L of the thin film j made of the insulating layer corresponding to the bonding length is selected to be about the coherent a of the superconducting material forming the first and first electrodes 7.2, and If a superconducting material with a four-herrent length of 8 degrees and a thickness of 1 (corresponding to the joint) is used as the material, the first and second elongated poles will be weakly coupled in a superconducting manner, forming a so-called planar bridge. It acts as a weakly bound Josephson zygote of the form or s-s'-s form. Furthermore, even if a conductive material such as a normal conducting material or a semiconductor material is used as the material of the above-mentioned thin conductive film B, the first and second electrodes 2 and 2 are weakly superconducting (coupled, so-called 5-N-8
Needless to say, it acts as a weakly coupled Josephnon element. At this time, the thickness of the conductive material is not limited to the coherent length, and may be thicker.

次に本発明によるジョセフノン接合菓子の製造方法の1
例を第3図に例示する。すなわち、第1の電極形成用に
超伝導薄膜15を基板/≠の表mlに積層して、第1の
電極の暫定的形状加工用のマスクパターン/lを形成す
る(工程(1))。
Next, 1 of the method for producing Joseph non-bonded confectionery according to the present invention.
An example is illustrated in FIG. That is, a superconducting thin film 15 for forming the first electrode is laminated on the surface ml of the substrate /≠ to form a mask pattern /l for provisional shape processing of the first electrode (step (1)).

次ニマスクパターンl/をマスクとして、超伝導薄膜/
jの前記マスクパターン//で復われていない領域を除
去して佃定電憤toを形成し、さらにマスクパターンl
lを除去した後、通常のレジスト=でなるリフトオフス
テンシル12を前記暫定′電極10上及び基板l≠上に
絶縁層でなる薄1俣の第2の電他仙1の端面及び第2の
電極の前記第1の電極と対向する面とは反対側の端■と
を位置決めする窓を有するようにしてノくターン形成す
る(工程(2〕)。次に暫定電極rOのリフトオフステ
ンシル12で憶われていない領域を除去してBtの電極
lを形成した後、試料を酸素ガス雰囲気・酸素プラズマ
雰囲気ないしは陽極酸化媒体中等に設置して第lの電極
lのリフトオフステンシル12で覆われていない端面な
酸化して、第1の電極lの端部に絶縁層でなる薄膜jを
形成する(工程(3))。
Next, using the mask pattern l/ as a mask, superconducting thin film/
The area not restored by the mask pattern // of j is removed to form a mask pattern l.
After removing 1, a lift-off stencil 12 made of a normal resist is applied to the end surface of the second electrode 1 and the second electrode, which is a thin strip of insulating layer, on the temporary electrode 10 and the substrate 1. A notch is formed so as to have a window for positioning the end (2) opposite to the surface facing the first electrode (step (2)).Next, the lift-off stencil 12 of the temporary electrode rO is used to After forming the Bt electrode 1 by removing the uncoated region, the sample is placed in an oxygen gas atmosphere, an oxygen plasma atmosphere, an anodizing medium, etc., and the end surface of the first electrode 1 that is not covered with the lift-off stencil 12 is removed. oxidation to form a thin film j made of an insulating layer at the end of the first electrode l (step (3)).

この絶縁層でなる赳映jt工1列として陽極酸化法を用
いた場合を示すならば酸化速度が約/ nm7分である
ので故旧nの幅乞刹する絶線1冑でなる薄膜は容易に制
御できるので精度艮く形J戊できることになる。次に第
2の電極として適用する超伝導薄)θ之13を垂直蒸漸
法寺により積層する(工程(4)凡人にリフトオフステ
ンシル12を除去してリフトオフステンシル12上に積
層された超伝導薄膜13をも会わせて除去し、−i面が
前記絶縁層でなる薄膜jの端面に接した第2の電極2を
形成する(rla(5J)。これは通常のリフトオフ技
術である。
If we use the anodic oxidation method to form a single line of film made of this insulating layer, the oxidation rate is approximately 7/nm, so it is easy to create a thin film made of a single piece of wire with a narrow width. Since it can be controlled, it is possible to form a shape with high precision. Next, a superconducting thin film 13 to be applied as a second electrode is laminated by vertical vapor deposition (Step (4)) The lift-off stencil 12 is removed by an ordinary person, and the superconducting thin film 13 laminated on the lift-off stencil 12 is removed. is also removed to form a second electrode 2 whose -i plane is in contact with the end surface of the thin film j made of the insulating layer (rla (5J). This is a normal lift-off technique.

その後、通常の真空蒸着法等を用いて導電性薄膜(超伝
導薄t2 v含む)を形成し、さらに第1及び第2の電
極の表面の一部に達する幅を有する形状の導亀性薄膜乙
を形成して、第2図に示した構造のジョセフノン接合素
子を得るものである(工程(6))。ここで等電性薄膜
の膜厚の制御も通常の方法で積層しても数iooλ/分
の積層速度を有するのが、一般的でめるので数nmの膜
厚は在高に制御卸でざる。
Thereafter, a conductive thin film (including a superconducting thin film T2V) is formed using a normal vacuum evaporation method, and then a torporically conductive thin film having a width that reaches part of the surfaces of the first and second electrodes is formed. Then, a Joseph non-junction element having the structure shown in FIG. 2 is obtained (step (6)). Here, the thickness of the isoelectric thin film can generally be controlled at a deposition rate of several iooλ/min even when laminated using a normal method, so it is not possible to control the thickness of a film of several nanometers. Colander.

上記の製造法にみるように、本発明によるジョセフノン
接合素子の極微寸法部分は、工程(3)の酸化工程にお
いて形成されるに絶縁層でなる薄膜jの厚みによって接
合長が、工@(6)において形成される専′亀性薄膜乙
の厚みによって接8厚か、それぞれ決足されΦものであ
る。
As seen in the above manufacturing method, the ultrafine dimension portion of the Joseph non-junction element according to the present invention has a junction length of Depending on the thickness of the specialized thin film formed in step 6), the thickness is determined to be 8 or Φ, respectively.

また、不発明によるジョセフソン嵌曾系子の横這は、第
3図について例示した製造法に限定されるものでないこ
とは言うまでもない。
Further, it goes without saying that the uninvented use of the Josephson fittings is not limited to the manufacturing method illustrated with reference to FIG.

以上説明したように、不発明によるジョセフソン抜会累
子は、極微寸法を擬する接会部の接合量および接合量が
、敵化朕かりなる絶縁層でなる薄膜や尋′観性薄膜の厚
みなどで決まり、これらはい1″れも放映技術を用いて
尚相反で実現できる構成となっている。このため、多数
の累子を製造した時の個々の木子特性のばらつきを著し
く抑制することができ、また系子特性の制御性や製造再
現性を大幅に改善でざるなど種々の効果を奏する。
As explained above, the uninvented Josephson Nukikai Seiko is that the amount of bonding and the amount of bonding of the bonding portion that simulates extremely small dimensions is the same as that of a thin film made of an insulating layer or a thin film made of an insulating layer. It is determined by the thickness, etc., and each of these 1" can be realized using broadcasting technology. For this reason, it is possible to significantly suppress the variation in the characteristics of individual pieces when producing a large number of pieces. It also has various effects such as greatly improving controllability of system properties and manufacturing reproducibility.

44、図面の簡単な説明 第1図は、従来のジョセンノン接合糸子の構成1ン1、
第2図は本発明によるジョセフノン接合素子の購成図、
第3図は本発明によるジョセフノン接合素子の製造法の
一例の説明に供する工程図である。
44. Brief description of the drawings Figure 1 shows the structure of a conventional Josennon spliced thread.
FIG. 2 is a purchasing diagram of the Joseph non-junction device according to the present invention.
FIG. 3 is a process diagram illustrating an example of a method for manufacturing a Joseph non-junction element according to the present invention.

l・・・第/の電極、10・・・暫定電極、!・・・第
2の篭・親、  //・・マスクパターン、3・・ブリ
ッジ部、  /2・・リフトメツステンシル、弘・・・
うター 合 都、  /3・・第2の一杯用超伝尋薄膜
、j ・・杷胤jψノでなる薄膜、/≠ ・・基 板、
2 ・・尋i性薄1仄、  /j・・・第/の電極用超
伝専薄膜。
l.../th electrode, 10... provisional electrode,! ...Second basket/parent, //...Mask pattern, 3...Bridge part, /2...Lift Metsu stencil, Hiro...
/3...Second superconductive thin film, j...Thin film made of loquat jψ, /≠...Substrate,
2 . . . 1. /j . . . superconductive thin film for the /th electrode.

指定代理人 ケ/閉 オZ閃 第3図designated agent ke/close OZ Sen Figure 3

Claims (2)

【特許請求の範囲】[Claims] (1)超伝導薄膜からなる第l及び第コの電極力を前記
第1及び第2の電極を構成する超伝導薄膜の略々コヒー
レント大の寸法のIにiを有する絶縁層でなる薄膜を挾
任させて1体的に構成されて基板上に設けられ、前記7
体的に眉4成された第1及び第コの電極並びに絶縁層で
なる薄膜の表面に導電性薄膜が削す己杷縁層の全幅並び
にb1■記第l及び第2の篭傷の少なくとも一部を覆う
形状で形成されて、前記第l及び第2の電極が電気的に
接続されて接合部力玉形成された構造からなることを特
徴とするジョセフソン接合素子。
(1) The force of the l-th and co-th electrodes made of a superconducting thin film is applied to a thin film made of an insulating layer having i in a dimension I of approximately the coherent size of the superconducting thin films constituting the first and second electrodes. The above-mentioned 7.
The entire width of the self-abrasive layer scratched by the conductive thin film on the surface of the thin film made of the first and second electrodes and the insulating layer, which are physically shaped, and at least the first and second scratches marked b1. A Josephson junction element, characterized in that it is formed in a shape that covers a part of the element, and has a structure in which the first and second electrodes are electrically connected to form a junction ball.
(2)前記#電性薄膜が前記第1及び第2の電極を構成
する超伝導薄膜の略々コヒーレント長の寸法の膜厚を有
する超伝導薄膜でなること髪*做とする特許請求の範囲
第1項記載のジョセフソン接合素子。
(2) The scope of the patent claims that the conductive thin film is a superconducting thin film having a thickness approximately equal to the coherent length of the superconducting thin films constituting the first and second electrodes. The Josephson junction device according to item 1.
JP58055224A 1983-04-01 1983-04-01 Josephson junction element Pending JPS59182586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58055224A JPS59182586A (en) 1983-04-01 1983-04-01 Josephson junction element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58055224A JPS59182586A (en) 1983-04-01 1983-04-01 Josephson junction element

Publications (1)

Publication Number Publication Date
JPS59182586A true JPS59182586A (en) 1984-10-17

Family

ID=12992633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58055224A Pending JPS59182586A (en) 1983-04-01 1983-04-01 Josephson junction element

Country Status (1)

Country Link
JP (1) JPS59182586A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027178A (en) * 1983-07-22 1985-02-12 Seiko Epson Corp Josephson effect element and manufacture thereof
JPS63190980U (en) * 1987-05-29 1988-12-08
US4884111A (en) * 1984-11-05 1989-11-28 Toshikazu Nishino Superconducting device
US5126315A (en) * 1987-02-27 1992-06-30 Hitachi, Ltd. High tc superconducting device with weak link between two superconducting electrodes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471999A (en) * 1977-11-19 1979-06-08 Rikagaku Kenkyusho Josephson effect element and method of fabricating same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471999A (en) * 1977-11-19 1979-06-08 Rikagaku Kenkyusho Josephson effect element and method of fabricating same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027178A (en) * 1983-07-22 1985-02-12 Seiko Epson Corp Josephson effect element and manufacture thereof
JPH0546112B2 (en) * 1983-07-22 1993-07-13 Seiko Epson Corp
US4884111A (en) * 1984-11-05 1989-11-28 Toshikazu Nishino Superconducting device
US5126801A (en) * 1984-11-05 1992-06-30 Hitachi, Ltd. Superconducting device
US5442196A (en) * 1984-11-05 1995-08-15 Hitachi, Ltd. Superconducting device
US5126315A (en) * 1987-02-27 1992-06-30 Hitachi, Ltd. High tc superconducting device with weak link between two superconducting electrodes
US5552375A (en) * 1987-02-27 1996-09-03 Hitachi, Ltd. Method for forming high Tc superconducting devices
US6069369A (en) * 1987-02-27 2000-05-30 Hitachi, Ltd. Superconducting device
JPS63190980U (en) * 1987-05-29 1988-12-08

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